Widths of excited impurity levels in phosphorus-doped silicon

1983 ◽  
Vol 61 (1) ◽  
pp. 67-70 ◽  
Author(s):  
Robert Barrie ◽  
L. G. Parent ◽  
R. R. Parsons
Keyword(s):  
Ground State ◽  
Final States ◽  
Optical Transitions ◽  
Zero Temperature ◽  
Neutral Donor ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Bound Electron ◽  
S States

A model is presented to explain the breadths of the excited impurity levels of phosphorus-doped silicon at zero temperature. The model assumes that the widths of optical transitions involving absorption by the neutral donor and so-called two-electron luminescence from an exciton bound to the neutral donor are the sums of level widths of the initial and final states. The excited s states' level widths are accounted for by assuming that they are governed by the lifetime of the levels for two-phonon decay to the ground state. This decay is brought about by the interaction of the bound electron with the phosphorus ion.

scholarly journals More on complex Sachdev-Ye-Kitaev eternal wormholes

2021 ◽  
Vol 2021 (3) ◽  
Author(s):  
Pengfei Zhang
Keyword(s):  
Black Hole ◽  
Ground State ◽  
Effective Action ◽  
Chemical Potential ◽  
Specific Charge ◽  
Zero Temperature ◽  
Small Coupling ◽  
Chemical Potentials ◽  
Quench Dynamics ◽  
Two Sides

Abstract In this work, we study a generalization of the coupled Sachdev-Ye-Kitaev (SYK) model with U(1) charge conservations. The model contains two copies of the complex SYK model at different chemical potentials, coupled by a direct hopping term. In the zero-temperature and small coupling limit with small averaged chemical potential, the ground state is an eternal wormhole connecting two sides, with a specific charge Q = 0, which is equivalent to a thermofield double state. We derive the conformal Green’s functions and determine corresponding IR parameters. At higher chemical potential, the system transit into the black hole phase. We further derive the Schwarzian effective action and study its quench dynamics. Finally, we compare numerical results with the analytical predictions.

New Process Integration of Sequential Phosphorus-Doped Silicon for Trench Field Plate Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Integration ◽  
Power Mosfets ◽  
Field Plate ◽  
New Process ◽  
Doped Silicon ◽  
Phosphorus Doped

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Dynamical decoupling of electron spins in phosphorus-doped silicon

2011 ◽  
Vol 56 (7) ◽  
pp. 591-597 ◽  
Author(s):  
Xing Rong ◽  
Ya Wang ◽  
JiaHui Yang ◽  
JinXian Zhu ◽  
WanJie Xu ◽  
...  
Keyword(s):  
Electron Spins ◽  
Dynamical Decoupling ◽  
Doped Silicon ◽  
Phosphorus Doped

scholarly journals Study of Zero Temperature Ground State Properties of the Repulsive Bose-Einstein Condensate in an Anharmonic Trap

2021 ◽  
Vol 13 (3) ◽  
pp. 733-744
Author(s):  
P. K. DEBNATH
Keyword(s):  
Ground State ◽  
Expansion Method ◽  
Einstein Condensate ◽  
Zero Temperature ◽  
Many Body ◽  
Ground State Properties ◽  
Potential Harmonic ◽  
The Stability ◽  
Average Size ◽  
Body Potential

The zero-temperature ground state properties of experimental 87Rb condensate are studied in a harmonic plus quartic trap [ V(r) =  ½mω2r2 + λr4 ]. The anharmonic parameter (λ) is slowly tuned from harmonic to anharmonic. For each choice of λ, the many-particle Schrödinger equation is solved using the potential harmonic expansion method and determines the lowest effective many-body potential. We utilize the correlated two-body basis function, which keeps all possible two-body correlations. The use of van der Waals interaction gives realistic pictures. We calculate kinetic energy, trapping potential energy, interaction energy, and total ground state energy of the condensate in this confining potential, modelled experimentally. The motivation of the present study is to investigate the crucial dependency of the properties of an interacting quantum many-body system on λ. The average size of the condensate has also been calculated to observe how the stability of repulsive condensate depends on anharmonicity. In particular, our calculation presents a clear physical picture of the repulsive condensate in an anharmonic trap.

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

2005 ◽  
Vol 98 (10) ◽  
pp. 103511 ◽  
Author(s):  
P.-C. Lv ◽  
X. Zhang ◽  
J. Kolodzey ◽  
M. A. Odnoblyudov ◽  
I. N. Yassievich
Keyword(s):  
Compressive Stress ◽  
Terahertz Emission ◽  
Silicon Devices ◽  
Doped Silicon ◽  
Phosphorus Doped ◽  
Uniaxial Compressive Stress

The Electronic Structure of Interstitial Iron in Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
A Thilderkvist ◽  
G Grossmann ◽  
M Kleverman ◽  
H G Grimmeiss
Keyword(s):  
Magnetic Field ◽  
Electronic Structure ◽  
High Resolution ◽  
Effective Mass ◽  
Level Structure ◽  
Zeeman Splitting ◽  
Iron Impurity ◽  
Doped Silicon ◽  
Donor States ◽  
Bound Electron

AbstractA donor-like spectrum in Fe-doped silicon has been studied by means of high-resolution Zeeman spectroscopy. Previous work had unambigouosly identified the center as the interstitial iron impurity and the spectrum was interpreted as due to the transitions , where an electron is excited to shallow effective-masslike donor states. In this paper, we can, by studying the transitions in a magnetic field, verify the effective-mass-like character of the loosely bound electron. Furthermore, we also obtain information on the impurity core whose level structure is reflected in the observed superposition of donor-hke Rydeberg series and whose g values determines the Zeeman splitting pattern.

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