Analysis of low-energy boron implants in silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 890-893 ◽  
Author(s):  
M. Simard-Normandin ◽  
C. Slaby
Keyword(s):  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Measurement Techniques ◽  
Low Energy ◽  
Resistance Measurement ◽  
Concentration Profiles ◽  
Secondary Ion Mass Spectroscopy ◽  
Sheet Resistance Measurement ◽  
Secondary Ion

Low-energy boron implants in silicon are analyzed using secondary-ion mass spectroscopy and standard junction and sheet-resistance measurement techniques. Implantation of 11B+ is compared with that of [Formula: see text]. The concentration profiles are compared with Linhard–Scharf–Schiott theory and improved range parameters are obtained.

Millisecond Duration Annealing of Boron Implants in Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
D. A. Smith ◽  
R. A. McMahon ◽  
H. Ahmed ◽  
D. J. Godfrey
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Concentration Profiles ◽  
Spreading Resistance ◽  
Isothermal Anneal ◽  
Wide Range ◽  
Secondary Ion

ABSTRACTA dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.

Raman and Secondary Ion Mass Spectroscopy of Epitaxial CdTe/InSb Interfaces Grown by Low-Energy Bias Sputtering

1990 ◽  
Vol 216 ◽  
Author(s):  
Suhit R. Das ◽  
David J. Lockwood ◽  
Stephen J. Rolfe ◽  
John P. McCaffrey ◽  
John G. Cook
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Mass Spectroscopy ◽  
Growth Kinetics ◽  
Film Deposition ◽  
Low Energy ◽  
Growth Surface ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

ABSTRACTHeteroepitaxial (100)CdTe || (100)InSb structures have been fabricated by growing CdTe epilayers, at growth temperatures below 200°C, on single crystal InSb substrates by low-energy bias sputtering. Controlled low-energy ion bombardment at the substrate was employed to clean the growth surface in-situ just prior to film deposition and to modify the growth kinetics and enhance adatom mobility during deposition. Raman spectroscopy of the interface revealed no evidence of In2Te3 and secondary ion mass spectroscopy showed the interface to be chemically abrupt.

Investigation of Proximity Rtd for Submicron Junctions in Vlsi Si Devices

1993 ◽  
Vol 303 ◽  
Author(s):  
W. Zagozdzon-Wosik ◽  
P. Grabiec ◽  
F. Romero-Borja ◽  
L. T. Wood ◽  
G. Lux
Keyword(s):  
Sheet Resistance ◽  
Thermal Diffusion ◽  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Si Doping ◽  
Shallow Junctions ◽  
Rapid Thermal Diffusion ◽  
Kinetics Of ◽  
Secondary Ion

ABSTRACTProximity rapid thermal diffusion is presented as a doping process for fabrication of very shallow junctions. The kinetics of Si doping with B, P and As is investigated using sheet resistance measurements, secondary ion mass spectroscopy and FTIR analyses. The efficiency of doping is affected by the dopant transport in the SOD which depends on the structure and composition of the SOD.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

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