Stability and spatial characterization of electron cyclotron resonance processing plasmas

1991 ◽  
Vol 69 (3-4) ◽  
pp. 195-201 ◽  
Author(s):  
P. K. Shufflebotham ◽  
D. J. Thomson

This paper presents preliminary measurements of the spatial variation of the plasma density, electron temperature, plasma potential, and floating voltage within a divergent magnetic field electron cyclotron resonance (ECR) plasma processing reactor. The measurements are performed using an orbital-motion-limited cylindrical Langmuir probe designed specifically for use in these plasmas. A brief discussion of the stability and uniformity of divergent field plasmas in general, and qualitative techniques for the diagnosis of these properties, is also given. It was found that these plasmas generally occurred in distinct "modes," characterized by unique shapes and dependences on system variables, and between which discontinuous, noisy, and often bistable transitions occurred. Axially resolved probe measurements performed under ECR conditions showed that the plasma density exhibited a broadly peaked profile, while the electron temperature showed a sharp peak at ECR. The differences in these profiles leads to three qualitatively different plasma regions available for use in ECR processing. The variation of the plasma potential explains the origin of the axial ion beams that commonly occur in these systems.

1991 ◽  
Vol 235 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein

ABSTRACTThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100–600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an as-grown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.


2011 ◽  
Vol 413 ◽  
pp. 18-23
Author(s):  
Geng Shun Chen ◽  
Rui Hong Tong ◽  
An Hua Zhang

Effects of the magnetic field on confinement of the coaxial twined ECR plasmas were studied using the Lanmuir probe diagnostic technique. Under the magnetic-mirror confinement, the plasma density was quite high in the vicinity of the axis of the ECR sources but it decreased rapidly with increasing radial distance; while under the cusped field confinement, the density was lower but uniform. The trend was similar for the electron temperature and the plasma potential. This property may be utilized in materials processes to meet different requirements. Key words: Electron cyclotron resonance (ECR), Plasma, Magnetic confinement, The cusped field confinement.PACS: 52.80.Pi, 52.55.-s, 52.70.-m


1991 ◽  
Vol 236 ◽  
Author(s):  
J. C. Barbour ◽  
H. J. Stein

AbstractThe incorporation of hydrogen into silicon nitride films grown downstream from an electron cyclotron resonance (ECR) plasma decreased rapidly with increasing substrate temperature (100-600°C). Fourier transform infra-red (FTIR) spectroscopy showed that the hydrogen in the as-grown material was primarily bonded to nitrogen. However, an applied bias of -200 V caused an increase in the number of Si-H bonds relative to N-H bonds, as a result of increased ion-beam damage. In addition, ion irradiation of an asgrown film with 175 keV Ar+ at room temperature showed that H transferred from N-H bonds to Si-H bonds without a loss of H. Elastic recoil detection (ERD) and FTIR of thermally annealed films showed that the stability of H incorporated during deposition increased with deposition temperature, and that the N-H bond was more stable than the Si-H bond above 700°C. Deuterium plasma treatments, at 600°C, of annealed films caused isotopic substitution with a conservation of bonds. Therefore, hydrogen loss from annealed films is apparently accompanied by a reduction in dangling bonds.


2007 ◽  
Vol 13 (4) ◽  
pp. 239-248 ◽  
Author(s):  
Masanori Kidera ◽  
Kazuya Takahashi ◽  
Shuichi Enomoto ◽  
Youhei Mitsubori ◽  
Akira Goto ◽  
...  

The ionization efficiency of an electron cyclotron resonance ion source (ECRIS) is generally high and all elements can be fundamentally ionized by the high-temperature plasma. We focused our attention on the high potentiality of ECRIS as an ion source for mass spectrometers and attempted to customize a mass spectrometer equipped with an ECRIS. Precise measurements were performed by using an ECRIS that was specialized and customized for elemental analysis. By using the charge-state distribution and the isotope ratio, the problem of overlap, such as that observed in the spectra of isobars, could be solved without any significant improvement in the mass resolution. When the isotope anomaly (or serious mass discrimination effect) was not observed in ECR plasma, the system was found to be very effective for isotope analysis. In this paper, based on the spectrum (ion current as a function of an analyzing magnet current) results of low charged state distributions (2+, 3+, 4+, …) of noble gases, we discuss the feasibility of an elemental analysis system employing an ECRIS, particularly for isotopic analysis. The high-performance isotopic analysis obtained from an ECRIS mass spectrometer in this study suggests that it can be widely applied to several fields of scientific study that require elemental or isotopic analyses with high sensitivity.


1994 ◽  
Vol 33 (Part 2, No. 4A) ◽  
pp. L541-L543 ◽  
Author(s):  
Hideo Tsuboi ◽  
Shigeo Horio ◽  
Yukinori Kajitani ◽  
Masahiro Itoh ◽  
Toshio Hayashi

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