scholarly journals Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

2015 ◽  
Vol 48 (3) ◽  
pp. 655-665 ◽  
Author(s):  
Andrei Benediktovitch ◽  
Alexei Zhylik ◽  
Tatjana Ulyanenkova ◽  
Maksym Myronov ◽  
Alex Ulyanenkov
Keyword(s):  
Dislocation Line ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Silicon And Germanium

Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silicon and germanium, the growth of such systems is challenged by nucleation and propagation of threading and misfit dislocations that degrade the electrical properties. To analyze the dislocation microstructure of Ge films on Si(011) and Si(111), a set of reciprocal space maps and profiles measured in noncoplanar geometry was collected. To process the data, the approach proposed by Kaganer, Köhler, Schmidbauer, Opitz & Jenichen [Phys. Rev. B, (1997),55, 1793–1810] has been generalized to an arbitrary surface orientation, arbitrary dislocation line direction and noncoplanar measurement scheme.

X-ray diffraction from magnetically oriented microcrystal suspensions detected by a shutterless continuous rotation method

2016 ◽  
Vol 49 (6) ◽  
pp. 2100-2105 ◽  
Author(s):  
Chiaki Tsuboi ◽  
Shu Tsukui ◽  
Fumiko Kimura ◽  
Tsunehisa Kimura ◽  
Kazuya Hasegawa ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray Diffraction ◽  
Time Constants ◽  
X Ray ◽  
Sample Rotation ◽  
Rotation Method ◽  
Continuous Rotation

In this study, the magnetically oriented microcrystal suspension (MOMS) method is combined with the shutterless continuous rotation method. In the MOMS method, the suspension has to be rotated to maintain the three-dimensional orientation of microcrystals. This means that it is compatible with the continuous rotation method, which also utilizes sample rotation. The time constants of the two methods should match to allow their successful combination. The conditions required for the MOMS method for combination with the continuous rotation method are investigated. Experiments are performed with a complementary metal–oxide semiconductor (CMOS) detector and the restriction imposed on the time constant for the MOMS method by the continuous rotation method is examined. The combination of these two methods is a promising approach for realizing the structure analyses of biomolecules from their microcrystalline powders.

A comparison of C54-TiSi2 formation in blanket and submicron gate structures using in situ x-ray diffraction during rapid thermal annealing

1995 ◽  
Vol 10 (9) ◽  
pp. 2355-2359 ◽  
Author(s):  
L.A. Clevenger ◽  
R.A. Roy ◽  
C. Cabral ◽  
K.L. Saenger ◽  
S. Brauer ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Submicron Structures ◽  
Final Orientation

We demonstrate the use of a synchrotron radiation source for in situ x-ray diffraction analysis during rapid thermal annealing (RTA) of 0.35 μm Salicide (self-aligned silicide) and 0.4 μm Polycide (silicided polysilicon) TiSi2 Complementary Metal Oxide Semiconductor (CMOS) gate structures. It is shown that the transformation from the C49 to C54 phase of TiSi2 occurs at higher temperatures in submicron gate structures than in unpatterned blanket films. In addition, the C54 that forms in submicron structures is (040) oriented, while the C54 that forms in unpatterned Salicide films is randomly oriented. Although the preferred oreintation of the initial C49 phase was different in the Salicide and Polycide gate structures, the final orientation of the C54 phase formed was the same. An incomplete conversion of C49 into C54-TiSi2 during the RTA of Polycide gate structures was observed and is attributed to the retarding effects of phosphorus on the transition.

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

Synthesis and Characterization of Large Single Crystals of Silicon and Germanium Clathrate-II Compounds and a New Tin Compound with Clathrate Layers

2000 ◽  
Vol 626 ◽  
Author(s):  
Svilen Bobev ◽  
Slavi C. Sevov
Keyword(s):  
Alkali Metal ◽  
Single Crystals ◽  
Alkali Metals ◽  
Measured Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mixed Alkali ◽  
Pauli Paramagnetism ◽  
Silicon And Germanium

ABSTRACTWe have synthesized large single crystals of clathrate-II compounds with frameworks of silicon and germanium by employing mixed alkali metal countercations. The combinations of alkali metals are rationally selected in order to fit the different cages of the clathrate-II structure. This approach leads to the following stoichiometric and fully “stuffed” compounds: Cs8Na16Si136, Cs8Na16Ge136, Rb8Na16Si136 and Rb8Na16Ge136. The structures and the corresponding Si-Si and Ge-Ge distances are elucidated and established with high accuracy from extensive single crystal X-ray diffraction work. The compounds are stoichiometric, metallic, and are very stable at a variety of extreme conditions such as heat, concentrated acids, hydrothermal treatment etc. No evidence was found for vacancies in the silicon and germanium networks or partial occupancies of the alkali metal sites. The stoichiometry of these fully “stuffed” clathrates is consistent with the measured temperature independent Pauli paramagnetism, supported also by the conductivity measurements on single crystals and thermopower measurements on pellets. A new compound with novel clathrate-like structure forms when small and large cations are combined with tin. The new materials, A6Na18Sn46 (A = K, Rb, Cs), are made of clathrate layers and the interlayer space filled with Sn4-tetrahedra and alkali-metal cations. Its formula can be rationalized as A6Na6Sn34 + 3·Na4Sn4 (one clathrate layer and three tin tetrahedra). The compound is stable in air and is being currently tested at other conditions. Detailed measurements of its transport properties are under way.

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