Lattice parameters and optical absorption of CuIn1-xGaxSe2 thin films

1999 ◽  
Vol 77 (7) ◽  
pp. 515-520
Author(s):  
AAI Al-Bassam
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Cubic Structure ◽  
Ga Content

Thin film polycrystalline solar cells based on CuIn1–xGaxSe2 have been fabricated and studied with x values from 0 to 1.0. The lattice parameters, grain size, and band gap were measured. Crystal structure and X-ray data of CuIn1–xGaxSe2 were determined using X-ray diffractometry. These materials had a cubic structure with x ≥ 0.5 and a tetragonal structure with x ≤ 0.5. The lattice constants vary linearly with composition. Grain size was measured using X-ray diffraction where the grain size increased linearly with Ga content. A grain size of 1.83-3.52 μm was observed with x ≤ 0.5, while it increased to 4.53 μm for x = 0.58.PACS No.: 70.73

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

UNDERLAYER ROUGHNESS INFLUENCE ON THE PROPERTIES OF Ag THIN FILM

2008 ◽  
Vol 15 (06) ◽  
pp. 787-791
Author(s):  
PEI ZHAO ◽  
RENG WANG ◽  
DINGQUAN LIU ◽  
FENGSHAN ZHANG ◽  
WEITAO SU ◽  
...  
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Optical Constants ◽  
Reflectance Spectrum ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

The effects of the roughness of ZnS underlayer on the microstructure, optical, and electrical properties of nanometer Ag thin film have been investigated in this paper. Nanometer Ag thin films in glass/ ZnS /7.5 nm Ag /30 nm ZnS stacks have been deposited and analyzed. In the stacks, the underlayers of ZnS have been sputtered with various thicknesses to generate various surface roughnesses. The X-ray diffraction (XRD) has been used to study the crystal structure of Ag films. The surface topography and the roughness of ZnS underlayer have been analyzed by atomic force microscopy. The sheet resistant will become larger as the increasing of the roughness. The optical constants can be derived by fitting the transmission and reflectance spectrum. From optical constants comparison of Ag films, with the surface of the stack becoming rougher, it was found that the refractive index will increase but the extinction coefficient will decrease.

Structural and thermal properties of Cu1.75−xMxTe crystals

2020 ◽  
Vol 34 (19) ◽  
pp. 2050180
Author(s):  
Y. I. Aliyev ◽  
Y. G. Asadov ◽  
L. B. Rustamova ◽  
A. O. Dashdemirov ◽  
N. A. Ismayilova ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thermal Expansion ◽  
Room Temperature ◽  
Lattice Parameters ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Phases ◽  
Temperature Dependences ◽  
Cubic Structure

Single crystals of Cu[Formula: see text]Te, Cu[Formula: see text]Zn[Formula: see text]Te and Cu[Formula: see text]Cd[Formula: see text]Te compounds were synthesized by Brijmen method and their crystal structure was studied by X-ray diffraction. The hexagonal, orthorhombic aand cubic structure phases of these compounds have been determined at room-temperature. Phase transitions at high-temperatures were observed. Lattice parameters for hexagonal, orthorhombic and cubic phases have been determined in the temperature range of [Formula: see text]–1073 K. From the temperature dependences of the lattice parameters, the coefficients of thermal expansion of the existing modifications in the main crystallographic directions were calculated.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

scholarly journals Deep learning for visualization and novelty detection in large X-ray diffraction datasets

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Lars Banko ◽  
Phillip M. Maffettone ◽  
Dennis Naujoks ◽  
Daniel Olds ◽  
Alfred Ludwig
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Artificial Intelligence ◽  
Deep Learning ◽  
Novelty Detection ◽  
Structural Similarity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Patterns ◽  
Post Hoc

AbstractWe apply variational autoencoders (VAE) to X-ray diffraction (XRD) data analysis on both simulated and experimental thin-film data. We show that crystal structure representations learned by a VAE reveal latent information, such as the structural similarity of textured diffraction patterns. While other artificial intelligence (AI) agents are effective at classifying XRD data into known phases, a similarly conditioned VAE is uniquely effective at knowing what it doesn’t know: it can rapidly identify data outside the distribution it was trained on, such as novel phases and mixtures. These capabilities demonstrate that a VAE is a valuable AI agent for aiding materials discovery and understanding XRD measurements both ‘on-the-fly’ and during post hoc analysis.

Single-crystal investigation of Ce5AgxGe4−x (x = 0.1−1.08) with Sm5Ge4 type

2020 ◽  
Vol 75 (8) ◽  
pp. 765-768
Author(s):  
Bohdana Belan ◽  
Dorota Kowalska ◽  
Mariya Dzevenko ◽  
Mykola Manyako ◽  
Roman Gladyshevskii
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Diffraction Data ◽  
Binary Compound ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray

AbstractThe crystal structure of the phase Ce5AgxGe4−x (x = 0.1−1.08) has been determined using single-crystal X-ray diffraction data for Ce5Ag0.1Ge3.9. This phase is isotypic with Sm5Ge4: space group Pnma (No. 62), Pearson code oP36, Z = 4, a = 7.9632(2), b = 15.2693(5), c = 8.0803(2) Å; R1 = 0.0261, wR2 = 0.0460, 1428 F2 values and 48 variables. The two crystallographic positions 8d and 4c show Ge/Ag mixing, leading to a slight increase in the lattice parameters as compared to those of the pure binary compound Ce5Ge4.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

scholarly journals β-Y(BO2)3 – a new member of the β-Ln(BO2)3 (Ln=Nd, Sm, Gd–Lu) structure family

2017 ◽  
Vol 72 (12) ◽  
pp. 983-988 ◽  
Author(s):  
Martin K. Schmitt ◽  
Hubert Huppertz
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Orthorhombic Space Group ◽  
Space Group ◽  
X Ray

Abstractβ-Y(BO2)3 was synthesized in a Walker-type multianvil module at 5.9 GPa/1000°C. The crystal structure has been elucidated through single-crystal X-ray diffraction. β-Y(BO2)3 crystallizes in the orthorhombic space group Pnma (no. 62) with the lattice parameters a=15.886(2), b=7.3860(6), and c=12.2119(9) Å. Its crystal structure will be discussed in the context of the isotypic lanthanide borates β-Ln(BO2)3 (Ln=Nd, Sm, Gd–Lu).

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