Operational Transconductance Amplifier (OTA) is an excellent current mode device suited very well for VLSI implementation. In this contribution we report realization of OTA using Silicon-On-Insulator (SOI) structure based MOSFETs and compared them to OTA designed with bulk MOSFET. SOI based OTA outperformed bulk MOSFET OTA giving close to 10 GHz improvement in high frequency f T . A band-pass filter was implemented with SOI based OTA with a center frequency of 7 GHz and a bandwidth of 480 kHz.
<p>In this paper we propose a synthesis of microwave active filters having Butterworth and Chebyshev responses in the frequency range 1GHz-2GHz. The filter fundamental block, used to build an active inductor, consists of CMOS-based Operational Transconductance Amplifier (OTA) circuits. These amplifiers are made out of simple current mirror using MOS transistors. The simulation procedure has been carried out through PSPICE software showing good performances regarding scattering parameters in terms insertion losses, of out-of-band rejection and phase.</p>
Design of active inductor-based butterworth and chebyshev microwave bandpass filters in standard 0.18µm-CMOS technology
