ISOTOPIC EFFECT ON THE LATTICE CONSTANT OF GERMANIUM AND SILICON

2013 ◽  
pp. 342-354
Author(s):  
ALEXANDER KAZIMIROV ◽  
JÖRG ZEGENHAGEN ◽  
EVGENY SOZONTOV ◽  
VICTOR KOHN ◽  
MANUEL CARDONA
Keyword(s):  
Lattice Constant ◽  
Isotopic Effect

Atomic structure of stair rod misfit dislocations at the GaAs on Si(100) interface

1990 ◽  
Vol 48 (4) ◽  
pp. 342-343
Author(s):  
D. Gerthsen
Keyword(s):  
Lattice Constant ◽  
Atomic Structure ◽  
Spherical Aberration ◽  
Stacking Faults ◽  
Misfit Dislocations ◽  
Gaas On Si ◽  
Thermal Expansion Coefficients ◽  
Transmission Electron ◽  
Intersection Line ◽  
Oriented Parallel

The prospect of technical applications has induced a lot of interest in the atomic structure of the GaAs on Si(100) interface and the defects in its vicinity which are often studied by high resolution transmission electron microscopy. The interface structure is determined by the 4.1% lattice constant mismatch between GaAs and Si, the large difference between the thermal expansion coefficients and the polar/nonpolar nature of the GaAs on Si interface. The lattice constant mismatch is compensated by misfit dislocations which are characterized by a/2<110> Burgers vectors b which are oriented parallel or inclined on {111} planes with respect to the interface. Stacking faults are also frequently observed. They are terminated by partial dislocations with b = a/6<112> on {111} planes. In this report, the atomic structure of stair rod misfit dislocations is analysed which are located at the intersection line of two stacking faults at the interface.A very thin, discontinous film of GaAs has been grown by MBE on a Si(100) substrate. Fig.1.a. shows an interface section of a 27 nm wide GaAs island along [110] containing a stair rod dislocation. The image has been taken with a JEOL 2000EX with a spherical aberration constant Cs = 1 mm, a spread of focus Δz = 10 nm and an angle of beam convergence ϑ of 2 mrad.

Effect of the structural changes on the mechanical properties of the sintered films

2016 ◽  
Vol 12 (1) ◽  
pp. 4141-4144
Author(s):  
Garima Jain
Keyword(s):  
Crystallite Size ◽  
Lattice Constant ◽  
Structural Changes ◽  
Structural Investigation ◽  
Energy Gap ◽  
Lattice Parameter ◽  
Metal Chalcogenides ◽  
Optical Energy Gap ◽  
Tin Telluride ◽  
Physical Quantities

Polycrystalline films of tin telluride were prepared by sintering technique. The structural investigation of the films with different thicknesses enables to determine lattice parameter, crystallite size and strain existing in the films. The XRD traces showed that strain was tensile in nature. The crystallite size increases with thickness while strain decreases. Higher the value of tensile strain, larger is the lattice constant. The optical energy gap shows a descending nature with increasing strain and so with the lattice constant. Such an attempt made to delve into interdependence of basic physical quantities helps to explore the properties of SnTe and utilize it as an alternative to heavy metal chalcogenides in various technological applications.  

Lattice-constant variation of the barium4flevel

1980 ◽  
Vol 22 (10) ◽  
pp. 4600-4603 ◽  
Author(s):  
J. F. Herbst
Keyword(s):  
Lattice Constant

scholarly journals Supercontinuum generation in photonic crystal fibers infiltrated with tetrachloroethylene

2021 ◽  
Vol 53 (4) ◽  
Author(s):  
Hieu Van Le ◽  
Van Thuy Hoang ◽  
Hue Thi Nguyen ◽  
Van Cao Long ◽  
Ryszard Buczynski ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Lattice Constant ◽  
Wavelength Range ◽  
Pump Pulse ◽  
Filling Factor ◽  
Photonic Crystal Fibers ◽  
Fused Silica ◽  
Anomalous Dispersion ◽  
Central Wavelength ◽  
Crystal Fibers

AbstractThis study proposes a photonic crystal fiber made of fused silica glass, with the core infiltrated with tetrachloroethylene (C2Cl4) as a new source of supercontinuum (SC) spectrum. We studied numerically the guiding properties of the several different fiber structures in terms of characteristic dispersion, mode area, and attenuation of the fundamental mode. Based on the results, the structural geometries of three C2Cl4-core photonic crystal fibers were optimized in order to support the broadband SC generations. The first fiber structure with lattice constant 1.5 μm and filling factor 0.4 operates in all-normal dispersion. The SC with a broadened spectral bandwidth of 0.8–2 μm is generated by a pump pulse with a central wavelength of 1.56 μm, 90 fs duration and energy of 1.5 nJ. The second proposed structure, with lattice constant 4.0 μm and filling factor 0.45, performs an anomalous dispersion for wavelengths longer than 1.55 μm. With the same pump pulse as the first fiber, we obtained the coherence SC spectrum in an anomalous dispersion range with wavelength range from 1 to 2 μm. Meanwhile, the third selected fiber (lattice constant 1.5 μm, filling factor 0.55) has two zero dispersion wavelengths at 1.04 μm and 1.82 μm. The octave-spanning of the SC spectrum formed in this fiber was achieved in the wavelength range of 0.7–2.4 μm with an input pulse whose optical properties are 1.03 μm wavelength, 120 fs duration and energy of 2 nJ. Those fibers would be good candidates for all-fiber SC sources as cost-effective alternatives to glass core fibers.

scholarly journals METAL–INSULATOR TRANSITIONS IN TETRAHEDRAL SEMICONDUCTORS UNDER LATTICE CHANGE

2004 ◽  
Vol 18 (07) ◽  
pp. 975-988
Author(s):  
SHAILESH SHUKLA ◽  
DEEPAK KUMAR ◽  
NITYA NATH SHUKLA ◽  
RAJENDRA PRASAD
Keyword(s):  
Dielectric Constant ◽  
Fermi Surface ◽  
Lattice Constant ◽  
Critical Behavior ◽  
Tight Binding ◽  
Metal Insulator ◽  
Wide Range ◽  
Insulating Phase ◽  
Tetrahedral Semiconductors ◽  
Lattice Compression

Although most insulators are expected to undergo insulator to metal transition on lattice compression, tetrahedral semiconductors Si, GaAs and InSb can become metallic on compression as well as by expansion. We focus on the transition by expansion which is rather peculiar; in all cases the direct gap at Γ point closes on expansion and thereafter a zero-gap state persists over a wide range of lattice constant. The solids become metallic at an expansion of 13% to 15% when an electron Fermi surface around L-point and a hole Fermi surface at Γ-point develop. We provide an understanding of this behavior in terms of arguments based on symmetry and simple tight-binding considerations. We also report results on the critical behavior of conductivity in the metal phase and the static dielectric constant in the insulating phase and find common behavior. We consider the possibility of excitonic phases and distortions which might intervene between insulating and metallic phases.

A Study on First Principle Calculation of Alloy Phase Diagram by Monte Carlo Simulation

1992 ◽  
Vol 291 ◽  
Author(s):  
Hideaki Sawada ◽  
Atsushi Nogami ◽  
Wataru Yamada ◽  
Tooru Matsiuniya
Keyword(s):  
Phase Diagram ◽  
Monte Carlo ◽  
Alloy Phase Diagram ◽  
Lattice Constant ◽  
Local Concentration ◽  
First Principle ◽  
Principle Calculation ◽  
First Principle Calculation ◽  
Local Lattice ◽  
Mc Simulation

ABSTRACTA method of first principle calculation of alloy phase diagram was developed by the combination of first principle energy band calculation, cluster expansion method (CEM) and Monte Carlo (MC) simulation, where the effective multi-body potential energy for the flip test in MC simulation was obtained by the decomposition of the total energy by CEM. This method was applied to Cu-Au binary system. The calculated phase diagram agreed with that of CVM by introducing the dependence of the lattice constant on the concentration of the whole system. Furthermore an attempt of introducing the effect of local lattice relaxation was performed by the consideration of the local concentration. The order-disorder transition temperature became closer to the experimental value by adjustment of the local lattice constant depending on the concentration in the local region consisted of up to the second nearest neighbors of the atom tested for flipping.

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