THE GAS MONITORING OF THE BESIII DRIFT CHAMBER

2010 ◽  
Vol 25 (02) ◽  
pp. 143-150
Author(s):  
XIANGGAO WANG ◽  
CHANG CHEN ◽  
YUANBO CHEN ◽  
ZHI WU ◽  
YUNTING GU ◽  
...  

Two monitoring proportional counters (MPCs), installed at the inlet and outlet of the gas system of BESIII drift chamber (DC), were used to monitor the operation of the BESIII DC successfully and effectively as reported in this paper. The ratio of G out /G in (full energy photoelectron peak position of 55 Fe 5.9 keV X-ray in inlet MPC as Gin and outlet MPC as Gout ) is used as the main monitoring parameter. The MPC method is very useful for the gas detector system.

IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 49912-49919
Author(s):  
Sandun Jayarathna ◽  
Md Foiez Ahmed ◽  
Liam O'ryan ◽  
Hem Moktan ◽  
Yonggang Cui ◽  
...  

2007 ◽  
Vol 539-543 ◽  
pp. 3059-3063 ◽  
Author(s):  
G. Schumacher ◽  
N. Darowski ◽  
I. Zizak ◽  
Hellmuth Klingelhöffer ◽  
W. Chen ◽  
...  

The profiles of 001 and 002 reflections have been measured at 1173 K as a function of time by means of X-ray diffraction (XRD) on tensile-creep deformed specimens of single crystal superalloy SC16. Decrease in line width (full width at half maximum: FWHM) by about 7 % and increase in peak position by about 3x10-4 degrees was detected after 8.5x104 s. Broadening of the 002 peak profile indicated a more negative value of the lattice misfit after the same time period. The results are discussed in the context of the anisotropic arrangement of dislocations at the γ/γ’ interfaces during creep and their rearrangement during the thermal treatment at 1173 K.


2008 ◽  
Vol 55 (3) ◽  
pp. 827-832 ◽  
Author(s):  
Jennifer A. Griffiths ◽  
Marinos G. Metaxas ◽  
Gary J. Royle ◽  
Cristian Venanzi ◽  
Colin Esbrand ◽  
...  
Keyword(s):  

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.


1994 ◽  
Vol 27 (5) ◽  
pp. 716-722 ◽  
Author(s):  
H. Wang

The influences of step size and scanning speed on the shape of a single X-ray diffraction (XRD) peak are analyzed quantitatively. For this purpose, it is assumed that XRD peak shapes are a mixture of Cauchy and Gauss curves. Six equations are established for the calculation of position, maximum intensity and full width at half-maximum (FWHM) errors caused by step size and two for the FWHM errors caused by counting statistics. The ratio of step size to FWHM is proposed as the shape-perfect coefficient of the XRD peak. From these equations and the relationship between the FWHM and the integral width of a peak based on the pseudo-Voigt function or Voigt function, three basic elements of a single symmetric XRD peak (peak position, maximum intensity and FWHM) can be refined. The optimum step size and scanning time can also be set from them.


1999 ◽  
Author(s):  
Tom J. C. Bruijns ◽  
Robert F. Bury ◽  
Falko Busse ◽  
Andrew G. Davies ◽  
Arnold R. Cowen ◽  
...  

2017 ◽  
Vol 898 ◽  
pp. 1431-1437
Author(s):  
Hong Yang Shao ◽  
Kan Zhang ◽  
Yi Dan Zhang ◽  
Mao Wen ◽  
Wei Tao Zheng

The δ-NbN thin films with different thickness have been prepared by reactive magnetron sputtering at different deposition time and exhibited alternating textures between (111) and (200) orientations as a function of thickness. In addition, the grain size, peak position, morphology, residual stress and orientation distributions of the deposited films were explored by X-ray diffraction, low-angel X-ray reflectivity, scanning electron microscopy and surface profiler. The film deposited at 300 s showed a (111) preferred orientation, changing to (200) preferred orientation at 600 s, and exhibited alternating textures between (111) and (200) preferred orientations. With further increasing deposition time, in which (200) peak position and the full width at half maximum of (111) peak also displayed a trend of alternating variation with varying deposition time. The intrinsic stress for δ-NbN films calculated by Stoney equation alternately changed with alternating textures, in which (111) orientation always takes place at relatively high intrinsic stress state and vice versa. Meanwhile, the film with (111) preferred orientation showed higher density than (200) preferred orientation. The film deposited at 4800 s owned a mixed texture of (111) and (200), showing an anisotropy distribution of (111)-oriented and (200)-oriented grains, while film deposited at 7200 s owned a strong (200) texture, displaying an isotropy distribution of (200)-oriented grains. The competitive growth between (111)-oriented and (200)-oriented grains was responsibility for alternating texture.


2008 ◽  
Vol 1111 ◽  
Author(s):  
Shuichi Emura ◽  
Masahiro Takahashi ◽  
Hiroyuki Tambo ◽  
Akira Suzuki ◽  
Tetsuya Nakamura ◽  
...  

AbstractThe magnetic characteristics of the dilute magnetic system GaGdN are investigated by mainly soft-X-ray magnetic circular dichroism (MCD) in energy range of 1160 – 1240 eV. The strong MCD signals up to 30 % at 15K are observed. The temperature dependence of its intensity is not on simple Curie-Weiss curve and depicts three-step curve. A step around 40 – 100K suggests a new magnetic phase. The luminescence spectrum of GaGdN at low temperature is divided into three parts consisting of two broad bands around 432 nm and 503 nm and a sharp peak at 652 nm. This sharp line is assigned to the intra-transition of f – f orbital owing to the weak temperature dependence of the intensity and peak position. AlGdN grown by molecular beam epitaxy produces luminescence at 318.5 nm. X-ray absorption fine structure is examined to survey the occupancy of the Gd ion in the grown specimens.


2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Vidya S. Taur ◽  
Rajesh A. Joshi ◽  
Ramphal Sharma

The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400°C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD) pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of characteristic peak, confirming the material modification upon annealing treatment. Presence of Cd, Ag, and S in energy dispersive X-ray analysis spectra (EDAX) confirms expected elemental composition in thin films. Scanning electron microscopy (SEM) images represent grain growth and agglomeration upon annealing. Red shift in optical absorbance strength and energy band gap values from 2.28 to 2.14 eV is obtained.I-Vresponse obtained from as grown and annealed thin films shows an enhancement in photosensitivity from 72% to 96% upon illumination to 100 mW/cm2light source.


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