Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400°C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD) pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of characteristic peak, confirming the material modification upon annealing treatment. Presence of Cd, Ag, and S in energy dispersive X-ray analysis spectra (EDAX) confirms expected elemental composition in thin films. Scanning electron microscopy (SEM) images represent grain growth and agglomeration upon annealing. Red shift in optical absorbance strength and energy band gap values from 2.28 to 2.14 eV is obtained.I-Vresponse obtained from as grown and annealed thin films shows an enhancement in photosensitivity from 72% to 96% upon illumination to 100 mW/cm2light source.

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Structural and Photoelectrochemical Properties of Cu-Doped CdS Thin Films Prepared by Ultrasonic Spray Pyrolysis

International Journal of Photoenergy ◽

10.1155/2013/620134 ◽

2013 ◽

Vol 2013 ◽

pp. 1-7 ◽

Cited By ~ 5

Author(s):

Rui Xie ◽

Jinzhan Su ◽

Mingtao Li ◽

Liejin Guo

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Indium Tin Oxide ◽

Ultrasonic Spray Pyrolysis ◽

Annealing Treatment ◽

Cost Effective ◽

Photoelectrochemical Properties ◽

Ultrasonic Spray ◽

Cds Thin Films ◽

P Type

Cu-doped CdS thin films of variable doping levels have been deposited on indium tin oxide-coated glass substrate by simple and cost-effective ultrasonic spray pyrolysis. The influences of doping concentration and annealing treatment on the structure and photoelectrochemical properties of the films were investigated. The deposited films were characterized by XRD, SEM, and UV-Vis spectra. Moreover, the films were investigated by electrochemical and photoelectrochemical measurements with regard to splitting water for solar energy conversion. The results showed that the Cu impurity can cause a structural change and red shift of absorption edge. It was found that the photocurrent can be improved by the Cu-doping process for the unannealed films under the weak illumination. The unannealed 5 at.% Cu-doped sample obtained the maximum IPCE, which achieved about 45% at 0.3 V versus SCE potential under 420 nm wavelength photoirradiation. In addition, the p-type CdS was formed with a doping of 4 at.%~10 at.% Cu after 450°C 2 h annealed in vacuum.

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Use of anti-solvent to enhance thermoelectric response of hybrid-halide perovskite thin films

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ac4adb ◽

2022 ◽

Author(s):

Shrikant SAINI ◽

Izuki Matsumoto ◽

Sakura Kishishita ◽

Ajay Kumar Baranwal ◽

Tomohide Yabuki ◽

...

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Photoelectron Spectroscopy ◽

High Performance ◽

Cost Effective ◽

Performance Tuning ◽

Charge Carrier Density ◽

X Ray ◽

Thermoelectric Energy Harvesting ◽

Halide Perovskite

Abstract Hybrid halide perovskite has been recently focused on thermoelectric energy harvesting due to the cost-effective fabrication approach and ultra-low thermal conductivity. To achieve high performance, tuning of electrical conductivity is a key parameter that is influenced by grain boundary scattering and charge carrier density. The fabrication process allows tuning these parameters. We report the use of anti-solvent to enhance the thermoelectric performance of lead-free hybrid halide perovskite, CH3NH3SnI3, thin films. Thin films with anti-solvent show higher connectivity in grains and higher Sn+4 oxidation states which results in enhancing the value of electrical conductivity. Thin films were prepared by a cost-effective wet process. Structural and chemical characterizations were performed using x-ray diffraction, scanning electron microscope, and x-ray photoelectron spectroscopy. The value of electrical conductivity and the Seebeck coefficient were measured near room temperature. The high value of power factor (1.55 µW/m.K2 at 320 K) was achieved for thin films treated with anti-solvent.

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Structural, Optical, and Electrical Properties of ZnO/Nb/ZnO Multilayer Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.975.238 ◽

2014 ◽

Vol 975 ◽

pp. 238-242 ◽

Cited By ~ 3

Author(s):

Adolfo Henrique Nunes Melo ◽

Petrucio Barrozo Silva ◽

Marcelo Andrade Macedo

Keyword(s):

Thin Films ◽

Peak Position ◽

Multilayer Thin Films ◽

Optical And Electrical Properties ◽

Zno Thin Film ◽

Energy Band Gap ◽

X Ray ◽

Unit Cell Size ◽

Vis Spectroscopy ◽

Sputtering System

ZnO multilayers and pure ZnO thin films were deposited onto glass using a sputtering system, and were subsequently characterized by X-ray diffractometry and UV-Vis spectroscopy. The resistivity of the samples was measured by the four-probe method. All films exhibited preferential orientation along the c-axis and the peak position (002) shifted to a lower position, indicating a reduction in the unit cell size. The pure ZnO thin film exhibited a maximum transmittance of approximately 98%, which decreased as the Nb layer increased, thus increasing the absorbance of the multilayer thin films. The energy band gap decreased as the thickness of the metal increased which higher value was 3.18 eV. The resistivity had a minimum of 0.1 × 10-4 Ω m.

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Thermochromic VO2 Thin Film Prepared by Post Annealing Treatment of V2O5 Thin Film

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.79-82.747 ◽

2009 ◽

Vol 79-82 ◽

pp. 747-750 ◽

Cited By ~ 12

Author(s):

Dong Qing Liu ◽

Wen Wei Zheng ◽

Hai Feng Cheng ◽

Hai Tao Liu

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Transition ◽

Photoelectron Spectroscopy ◽

Sol Gel ◽

Annealing Treatment ◽

Simple Method ◽

X Ray ◽

Post Annealing ◽

Vo2 Thin Films

Thermochromic vanadium dioxide (VO2) exhibits a semi-conducting to metallic phase transition at about 68°C, involving strong variations in electrical and optical properties. A simple method was proposed to prepare VO2 thin films from easily gained V2O5 thin films. The detailed thermodynamic calculation was done and the results show that V2O5 will decompose to VO2 when the post annealing temperature reaches 550°C at the atmospheric pressure of less than 0.06Pa. The initial V2O5 films were prepared by sol-gel method on fused-quartz substrates. Different post annealing conditions were studied. The derived VO2 thin film samples were characterized using X-ray diffraction and X-ray photoelectron spectroscopy. The electrical resistance and infrared emissivity of VO2 thin films under different temperatures were measured. The results show that the VO2 thin film derived from the V2O5 thin film annealed at 550°C for 10 hours is pure dioxide of vanadium without other valences. It was observed that the resistance of VO2 thin film with thickness about 600nm can change by 4 orders of magnitude and the 7.5-14μm emissivity can change by 0.6 during the phase transition.

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Characterization of Physical Properties of Thermally Evaporated Doped CdS Thin Films for Photovoltaics

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.510-511.156 ◽

2012 ◽

Vol 510-511 ◽

pp. 156-162 ◽

Cited By ~ 3

Author(s):

G.H. Tariq ◽

M. Anis-ur-Rehman

Keyword(s):

Thin Films ◽

Solar Cells ◽

Window Layer ◽

Bandgap Energy ◽

X Ray Diffraction ◽

X Ray ◽

Polycrystalline Thin Films ◽

Cds Thin Film ◽

Cds Thin Films ◽

Evaporation Technique

Polycrystalline thin films of Cadmium Sulfide (CdS) have been extensively studied for application as a window layer in CdTe/CdS and CIGS/CdS thin film solar cells. Higher efficiency of solar cells is possible by a better conductivity of a window layer, which can be achieved by doping these films with suitable elements. CdS thin films were deposited on properly cleaned glass substrate by thermal evaporation technique under vacuum2×10-5mbar. Films were structurally characterized by using X-ray diffraction. The X-ray diffraction spectra showed that the thin films were polycrystalline in nature. Aluminum was doped chemically in as deposited and annealed thin films by immersing films in AlNO33.9H2O solutions respectively. Comparison between the effects of different doping ratios on the structural and optical properties of the films was investigated. Higher doping ratios have improved the electrical properties by decreasing the resistivity of the films and slightly changed the bandgap energy Eg. The grain size, strain, and dislocation density were calculated for as-deposited and annealed films.

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Deposition of Nano Fiber ZnO and Zn1-xCdxO Thin Films by a Simple Spray Pyrolysis and Characterizations for Optoelectronic Applications

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.545.100 ◽

2012 ◽

Vol 545 ◽

pp. 100-104 ◽

Cited By ~ 2

Author(s):

J. Podder ◽

M.R Islam

Keyword(s):

Thin Films ◽

Spray Pyrolysis ◽

Optical Band Gap ◽

Zinc Alloy ◽

X Ray Diffraction ◽

Sem Images ◽

X Ray ◽

Vis Spectroscopy ◽

Nano Fiber ◽

Cadmium Zinc

ZnO and Zn1-xCdxO thin films have been deposited onto glass substrate using spray pyrolysis at 200°C. Cadmium-zinc alloy thin films have been prepared by taking different concentrations of cadmium (Cd). The elemental analysis and the surface morphology of the films were carried by the energy dispersive X-ray (EDX) and scanning electron microscopy (SEM). The EDX data show that the films are highly stoichiometric. The SEM images show that the film changes from nano fiber to grain with the increase of Cd concentrations. The X-ray diffraction pattern shows that the films are polycrystalline in nature. The crystal structure of the films changes from hexagonal-ZnO to cubic-CdO depending on the concentration of Zn and Cd in the Zn1-xCdxO films. The optical properties of these films were studied by UV-VIS spectroscopy. The optical band gap of the films was changed from 3.2 to 2.4 with the variation of cadmium.

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Synthesis, optoelectronic properties and photoelectrochemical performance of CdS thin films

Physica B Condensed Matter ◽

10.1016/j.physb.2012.11.032 ◽

2013 ◽

Vol 411 ◽

pp. 118-121 ◽

Cited By ~ 14

Author(s):

P.A. Chate ◽

S.S. Patil ◽

J.S. Patil ◽

D.J. Sathe ◽

P.P. Hankare

Keyword(s):

Thin Films ◽

Optoelectronic Properties ◽

Photoelectrochemical Performance ◽

Cds Thin Films

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Defect-Related Photoluminescence from SiO2 Thin Films by Si-Ge Ions Doped

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.328-330.1153 ◽

2011 ◽

Vol 328-330 ◽

pp. 1153-1156 ◽

Cited By ~ 1

Author(s):

Kun Zhong ◽

Yan Dong Xia ◽

Ju Hong Miao ◽

Jiang Fu

Keyword(s):

Thin Films ◽

Photoelectron Spectroscopy ◽

Annealing Temperature ◽

Annealing Treatment ◽

X Ray Diffraction ◽

X Ray

Si and Ge ions are implanted into SiO2thin films, subsequently the annealing treatment are carried out. The samples exhibit photoluminescence (PL) peaks at 400, 470, 550 and 780 nm. With the annealing temperature increasing, the intensity of 400-470 nm PL band increases remarkably. After oxidation annealing treatment, the intensity of 400-470 nm PL band decreases, and that of 550 nm and 780 nm PL peaks rises. Combing with the results of X-ray photoelectron spectroscopy(XPS), X-ray diffraction (XRD) and PL measurement, we propose that the PL peaks at 400 nm, 470 nm, 550 nm and 780 nm originate from ≡Ge−Si≡ center, ≡Si−Si≡ center, SPR center and GeO center, respectively.

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