X-RAY SCATTERING STUDIES OF CHARGE STRIPES IN La2-xSrxNiO4 (x=0.20-0.33)

2002 ◽  
Vol 16 (11n12) ◽  
pp. 1633-1640 ◽  
Author(s):  
P. D. HATTON ◽  
M. E. GHAZI ◽  
S. B. WILKINS ◽  
P. D. SPENCER ◽  
D. MANNIX ◽  
...  

The La 2-x Sr x NiO 4 system is isostructural with the high T C superconducting cuprate La 2-x Sr x CuO 4 and is a prototypical system for the understanding of strongly correlated electron-phonon coupling, and the resultant effects on material properties. X-ray scattering studies have been performed on La5/3Sr1/3NiO4 that demonstrate the two-dimensional nature of these charge stripes. Such studies, demonstrate the very high correlation length of the stripes (~ 2000 Å) at low temperatures. We have undertaken a series of experiments measuring the wavevector and charge stripe correlation length on a variety of crystals with the compositions La 2-x Sr x NiO 4 (x=0.20, 0.25, 0.275, 0.30 and 0.33) using ~10 keV X-rays. The results demonstrate that for x=0.275, and above, the charge stripes are highly correlated in a well-ordered crystalline lattice. Measurements of the incommensurability, ε, as a function of temperature for the series revealed that it is commensurate and temperature independent for the x=0.33 sample. For other compositions it is incommensurate and also temperature dependent. However for the x=0.20 and 0.25 crystals a much reduced correlation length was observed suggestive of a charge stripe glass. However, such experiments are sensitive to such charge ordering only in the near (top few micron) surface region. High energy X-rays however can probe the charge stripe ordering within the bulk of the single crystal by utilising the dramatic increase in penetration depth. We have used 130 keV X-rays and demonstrate that in La5/3Sr1/3NiO4 the charge stripes are far less correlated in the bulk than in the near surface region. This reduced correlation length (~300 Å), consistent with neutron scattering measurements, is indicative of a charge stripe glass, reminiscent of that observed below x=0.25, in the near surface region.

2004 ◽  
Vol 19 (1) ◽  
pp. 49-52 ◽  
Author(s):  
J. F. Woitok

This study is about the structural properties of SiGe and SiGe:C heteroepitaxial layers on Si (001). The structural characterization is based on the application of complementary information content of X-ray scattering techniques like high-resolution X-ray diffraction (XRD), X-ray reflectivity (XRR), and X-ray diffuse scattering (XDS). One main focus of the analysis is to derive a sample model that sufficiently describes all experimental datasets. In addition, the reliability of parameters extracted by just one single method is discussed. It turned out that XRR is more sensitive to the near surface region, indicating the presence of surface roughness and density gradients that do not significantly affect the XRD pattern.


1999 ◽  
Vol 602 ◽  
Author(s):  
M. Petit ◽  
L. J. Martinez-Miranda ◽  
M. Rajeswari ◽  
A. Biswas ◽  
D. J. Kang ◽  
...  

AbstractWe have performed depth profile analyses of the lattice parameters in epitaxial thin films of La1−xCaxMno3 (LCMO), where x = 0.33 or 0.3, to understand the evolution of strain relaxation processes in these materials. The analyses were done using Grazing Incidence X-ray Scattering (GIXS) on films of different thicnesses on two different substrates, (100) oriented LaAlO3 (LAO), with a lattice mismatch of ∼2% and (110) oriented NGO, with a lattice mismatch of less than 0.1%. Films grown on LAO can exhibit up to three in-plane strained lattice constants, corresponding to a slight orthorhombic distortion of the crystal, as well as near-surface and columnar lattice relaxation. As a function of film thickness, a crossover from a strained film to a mixture of strained and relaxed regions in the film occurs in the range of 700 Å. The structural evolution at this thickness coincides with a change in the resistivity curve near the metalinsulator transition. The in-plane compressive strain has a range of 0.2 – 1.5%, depending on the film thickness for filsm in the range of 400 - 1500 A.


2012 ◽  
Vol 25 (4) ◽  
pp. 9-15 ◽  
Author(s):  
L. Braicovich ◽  
N. B. Brookes ◽  
G. Ghiringhelli ◽  
M. Minola ◽  
G. Monaco ◽  
...  
Keyword(s):  
X Rays ◽  
X Ray ◽  

2013 ◽  
Vol 46 (5) ◽  
pp. 1508-1512 ◽  
Author(s):  
Byron Freelon ◽  
Kamlesh Suthar ◽  
Jan Ilavsky

Coupling small-angle X-ray scattering (SAXS) and ultra-small-angle X-ray scattering (USAXS) provides a powerful system of techniques for determining the structural organization of nanostructured materials that exhibit a wide range of characteristic length scales. A new facility that combines high-energy (HE) SAXS and USAXS has been developed at the Advanced Photon Source (APS). The application of X-rays across a range of energies, from 10 to 50 keV, offers opportunities to probe structural behavior at the nano- and microscale. An X-ray setup that can characterize both soft matter or hard matter and high-Zsamples in the solid or solution forms is described. Recent upgrades to the Sector 15ID beamline allow an extension of the X-ray energy range and improved beam intensity. The function and performance of the dedicated USAXS/HE-SAXS ChemMatCARS-APS facility is described.


2006 ◽  
Vol 21 (2) ◽  
pp. 122-124
Author(s):  
I. Busch ◽  
J. Stümpel ◽  
M. Krumrey

In this study, the effects of growth interruptions on the formation of the interfaces in GaAs∕AlAs multilayers are investigated. For that purpose, a series of different samples has been manufactured with molecular-beam epitaxy. The introduction of growth interruptions of 50 s after the deposition of the layer leads to a change in the morphological properties of the interfaces, in particular their correlation length. These modifications due to the growth interrupt are analyzed with diffuse X-ray scattering. As a result of the measurements, an extension of the lateral correlation length can be proved. By contrast, the vertical correlation of the interfaces is not affected.


1984 ◽  
Vol 17 (5) ◽  
pp. 337-343 ◽  
Author(s):  
O. Yoda

A high-resolution small-angle X-ray scattering camera has been built, which has the following features. (i) The point collimation optics employed allows the scattering cross section of the sample to be directly measured without corrections for desmearing. (ii) A small-angle resolution better than 0.5 mrad is achieved with a camera length of 1.6 m. (iii) A high photon flux of 0.9 photons μs−1 is obtained on the sample with the rotating-anode X-ray generator operated at 40 kV–30 mA. (iv) Incident X-rays are monochromated by a bent quartz crystal, which makes the determination of the incident X-ray intensity simple and unambiguous. (v) By rotation of the position-sensitive proportional counter around the direct beam, anisotropic scattering patterns can be observed without adjusting the sample. Details of the design and performance are presented with some applications.


2016 ◽  
Vol 23 (4) ◽  
pp. 880-886 ◽  
Author(s):  
Jungho Kim ◽  
Xianbo Shi ◽  
Diego Casa ◽  
Jun Qian ◽  
XianRong Huang ◽  
...  

Advances in resonant inelastic X-ray scattering (RIXS) have come in lockstep with improvements in energy resolution. Currently, the best energy resolution at the IrL3-edge stands at ∼25 meV, which is achieved using a diced Si(844) spherical crystal analyzer. However, spherical analyzers are limited by their intrinsic reflection width. A novel analyzer system using multiple flat crystals provides a promising way to overcome this limitation. For the present design, an energy resolution at or below 10 meV was selected. Recognizing that the angular acceptance of flat crystals is severely limited, a collimating element is essential to achieve the necessary solid-angle acceptance. For this purpose, a laterally graded, parabolic, multilayer Montel mirror was designed for use at the IrL3-absorption edge. It provides an acceptance larger than 10 mrad, collimating the reflected X-ray beam to smaller than 100 µrad, in both vertical and horizontal directions. The performance of this mirror was studied at beamline 27-ID at the Advanced Photon Source. X-rays from a diamond (111) monochromator illuminated a scattering source of diameter 5 µm, generating an incident beam on the mirror with a well determined divergence of 40 mrad. A flat Si(111) crystal after the mirror served as the divergence analyzer. From X-ray measurements, ray-tracing simulations and optical metrology results, it was established that the Montel mirror satisfied the specifications of angular acceptance and collimation quality necessary for a high-resolution RIXS multi-crystal analyzer system.


2014 ◽  
Vol 519 ◽  
pp. 012008 ◽  
Author(s):  
G Subías ◽  
J García ◽  
J Herrero-Martín ◽  
J Blasco ◽  
M C Sánchez

1990 ◽  
Vol 64 (21) ◽  
pp. 2527-2530 ◽  
Author(s):  
L. Mailänder ◽  
H. Dosch ◽  
J. Peisl ◽  
R. L. Johnson

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