PROPERTIES OF Ta2O5 THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

2009 ◽  
Vol 23 (27) ◽  
pp. 5275-5282 ◽  
Author(s):  
JICHENG ZHOU ◽  
DITIAN LUO ◽  
YOUZHEN LI ◽  
ZHENG LIU
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Characteristics ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Root Mean Square Roughness ◽  
Reactive Magnetron ◽  
Flow Ratio ◽  
Dc Reactive Magnetron Sputtering ◽  
Xrd Patterns

Ta 2 O 5 thin films were deposited at different oxygen flow ratio ( O 2/( O 2+Ar) = 10 ~ 80%) by DC reactive magnetron sputtering. Influence of oxygen flow ratio on depositing rate, surface characteristics, microstructure, and optical properties are discussed in this paper. With the increasing of oxygen, deposition rate decreases exponentially, the root mean square roughness and the maximum roughness decrease according to the atom force microscope images. XRD patterns indicate the as-deposited Ta 2 O 5 films are amorphous. Based on the envelop method, the samples' optical constants are calculated from the curve of transmission spectrum. The results indicate that refractive index n increases from 2.01 to 2.20 (λ = 500 nm ) for the oxygen flow ratio increases from 20% to 60%, the extinction coefficient k appears to decrease.

Pulsed DC Reactive Magnetron Sputtering of AlN Thin Films on High Frequency LTCC Substrates

2003 ◽  
Vol 783 ◽  
Author(s):  
Jung W. Lee ◽  
Jerome J. Cuomo ◽  
Baxter F. Moody ◽  
Yong S. Cho ◽  
Roupen L. Keusseyan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Crystal Orientation ◽  
Broad Band ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Pulsed Dc ◽  
Dc Reactive Magnetron Sputtering ◽  
Small Grains ◽  
Xrd Patterns

ABSTRACTThis preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.

Deposition of Transparent Niobium Oxide Thin Film by DC Reactive Magnetron Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 217-220
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Flow Rate ◽  
Niobium Oxide ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

Transparent niobium oxide thin films were prepared by dc reactive magnetron sputtering under different oxygen flow rate. The niobium oxide thin films have been deposited on silicon wafer and glass substrate from a 99.99% pure niobium target at room temperature. The films were characterized to obtain the relationship between oxygen flow rate and deposition rate, structural, morphology and optical. The result show that the deposition rate decreased with increasing the oxygen flow rate. However, the transmittance spectrum percentage increases with increasing the oxygen flow rate.

Effect of O2 Flow Rate on Structural and Optical Properties of Tantalum Oxide Thin Films Prepared by DC Reactive Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 448-451 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Tantalum Oxide ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

Tantalum oxide (Ta2O5) thin films have been deposited on glass substrates and silicon wafers (100) by dc reactive magnetron sputtering and with a 99.995% pure tantalum target. The effect of the oxygen flow rate on the crystallinity and optical properties were investigated. The films were characterized by X-ray diffraction patterns, UV-Vis spectrophotometer and spectroscopic ellipsometry. The results show that the deposition rate of Ta2O5 thin films was decreased with the increase in oxygen flow rate. In addition, Ta2O5 thin films deposited at oxygen flow rate higher than 6 sccm could be exhibited sufficiently oxide thin film, the transmittance spectrum percentage indicated 80%, which corresponded to the obtained optical characteristic.

Room temperature deposition of crystalline HfN thin films by DC reactive magnetron sputtering

2021 ◽  
Author(s):  
Wuttichai Phae-ngam ◽  
Tossaporn Lertvanithphol ◽  
Chanunthorn Chananonnawathorn ◽  
Rattanachai Kowong ◽  
Mati Horprathum ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering ◽  
Temperature Deposition

Growth and characterization of NiO thin films prepared by dc reactive magnetron sputtering

2011 ◽  
Vol 13 (2) ◽  
pp. 314-320 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
A. Sivasankar Reddy ◽  
Kee-Sun Lee ◽  
P. Sreedhara Reddy
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering
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