Enhanced thermoelectric properties of the hole-doped Bi2−xKxSr2Co2Oy ceramics

2015 ◽  
Vol 29 (28) ◽  
pp. 1550192 ◽  
Author(s):  
Feng Gao ◽  
Qinglin He ◽  
Ruijuan Cao ◽  
Fang Wu ◽  
Xing Hu ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Solid State Reaction Method ◽  
Undoped Sample ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Element Doping ◽  
P Type ◽  
Remarkable Reduction

In this paper, the influence of K element doping on the thermoelectric properties of the [Formula: see text] (x = 0.00, 0.05, 0.10, 0.15, and 0.20) samples prepared by the solid-state reaction method were investigated from 333 K to 973 K. It was shown that due to the p-type K doping the electrical resistivity of the doped sample can be reduced remarkably as compared with the undoped sample, especially for the optimum doped sample [Formula: see text]. The Seebeck coefficients of the K doped samples have only a slight decrease as compared with the undoped sample. As a result of the remarkable reduction of the electrical resistivity the power factor of the doped sample have a significant improvement. The thermal conductivity of the samples is depressed due to the defects caused by K doping. As an overall result, the dimensionless figure of merit (ZT) of the [Formula: see text] sample reaches a maximum value of 0.3 at 973 K, being 93% higher than that of the undoped sample.

Influence of Cu Doping on the Thermoelectric Properties of Bi1.5Pb0.5Sr1.8La0.2Co2Oy

2013 ◽  
Vol 423-426 ◽  
pp. 593-596
Author(s):  
Qing Lin He ◽  
Zhan Ying Guo ◽  
Xing Hu ◽  
Hong Zhang Song
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Solid State Reaction Method ◽  
Electric Transport ◽  
Cu Doping ◽  
Seebeck Coefficients ◽  
Dimensionless Figure Of Merit ◽  
Element Doping ◽  
Properties Of Materials

Cu doped Bi1.5Pb0.5Sr1.8La0.2Co2-xCuxOy(x = 0.0, 0.2, 0.4) samples were prepared through the solid state reaction method. The influence of different Cu doping contents on electrical resistivity, Seebeck coefficients, thermal conductivity, and the dimensionless figure of meritZTwas investigated. All the samples of Cu concentration 0.4 are single phases. The electrical resistivity of Bi1.5Pb0.5Sr1.8La0.2Co1.8Cu0.2Oydescends, and itsZTvalues are enhanced obviously. The results show that suitable element doping can modify the electric transport properties and enhance thermoelectric properties of materials.

Thermoelectric properties of Cu2Se/xNi0.85Se hot-pressed from hydrothermal synthesis nanopowders

2017 ◽  
Vol 31 (09) ◽  
pp. 1750093 ◽  
Author(s):  
Feng Gao ◽  
Xiaohan Du ◽  
Fang Wu ◽  
Xinjian Li ◽  
Xing Hu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Hydrothermal Synthesis ◽  
Hydrothermal Method ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Secondary Phase ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Bulk Alloys

The [Formula: see text] ([Formula: see text] = 0, 0.025, 0.05, 0.075, 0.1, 0.15, 0.2, 0.3, 0.4 and 0.5) nanopowders were synthesized by the hydrothermal method and then were hot-pressed into bulk alloys. The effects of [Formula: see text] secondary phase on the thermoelectric (TE) properties of [Formula: see text] were investigated. For [Formula: see text] and [Formula: see text], both their electrical resistivity and Seebeck coefficients increase. While for [Formula: see text], they decrease instead. The samples for [Formula: see text] have lower thermal conductivity. However, for [Formula: see text], the thermal conductivity rises remarkably. As an overall result, the maximum value of dimensionless TE figure of merit (ZT) reaches 1.52 at 873 K for the sample of [Formula: see text], 36.5% higher than for the sample without [Formula: see text].

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

Influence of R3+ ion sizes on the thermoelectric properties of RBaCo4O7+δ ceramics

2015 ◽  
Vol 29 (26) ◽  
pp. 1550154 ◽  
Author(s):  
F. Gao ◽  
Q. L. He ◽  
F. Wu ◽  
D. L. Yang ◽  
X. Hu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Solid State ◽  
Thermoelectric Properties ◽  
Solid State Reaction ◽  
Solid State Reaction Method ◽  
Oxygen Adsorption ◽  
Reaction Method ◽  
Transition Phenomenon ◽  
Seebeck Coefficients

The influence of [Formula: see text] ion sizes on the electrical resistivity, Seebeck coefficients, thermal conductivity and [Formula: see text] values of [Formula: see text] prepared by the solid-state reaction method was investigated from 373 K to 973 K. The electrical resistivity decreases with decreasing [Formula: see text] ion sizes. Both the electrical resistivity and the Seebeck coefficients have a transition at about 630 K. Especially, the transition phenomenon disappears gradually with decreasing [Formula: see text] ion sizes, and is attributed to the oxygen adsorption of [Formula: see text]. The [Formula: see text] values increase with rising temperature or decreasing [Formula: see text] ion sizes. The [Formula: see text] with the smallest [Formula: see text] size has the maximum [Formula: see text] value that reaches 0.1 at 973 K.

Thermoelectric Properties of Co1-xNbxSb3 Prepared by Induction Melting

2005 ◽  
Vol 486-487 ◽  
pp. 602-605 ◽  
Author(s):  
J.B. Park ◽  
S.-W. You ◽  
K.W. Cho ◽  
J.I. Lee ◽  
Soon Chul Ur ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Induction Melting ◽  
Thermoelectric Power Factor ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
High Temperature Maximum ◽  
Higher Temperature ◽  
Nb Doping ◽  
P Type

Induction melting was attempted to prepare the undoped and Nb-doped CoSb3 compounds, and their thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by induction melting and subsequent annealing at 400°C for 2 hours in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased withincreasing temperature, indicating mixed behaviors of metallic and semiconducting conductions. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with the increasing amount of Nb doping, mainly originated from the Seebeck coefficient variation.

scholarly journals Thermoelectric Properties of Sr1-3x/2Lax/2Smx/2TiO3-δ (0.05 ≤ x ≤ 0.30) Ceramics

2021 ◽  
Author(s):  
Adindu C. Iyasara
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Ceramic Powders ◽  
Thermoelectric Figure ◽  
Seebeck Coefficients ◽  
Reducing Gas ◽  
Maximum Value ◽  
Heat Treated ◽  
Electrical Conductivities ◽  
Sintering Processes

Abstract Influence of strongly reducing processing atmosphere on Sr-vacancy Sr1-3x/2Lax/2Smx/2TiO3-δ (x = 0.05, 0.10, 0.15, 0.20, 0.30) ceramics was investigated. The ceramic powders were prepared by the solid-state reaction (SSR) method, and heat treated in 5 % H2/N2 reducing gas at 1573 K for 6 h and 1773 K for 8 h for calcination and sintering processes, respectively. Thermoelectric properties of Sr1-3x/2Lax/2Smx/2TiO3-δ ceramics were evaluated from 573 to 973 K. Their electrical conductivities increased with carrier concentration and also decreased with temperature, indicating metallic behaviour. The Seebeck coefficients showed n-type behaviour and increased with temperature. Additionally, the total thermal conductivities exhibited low values, with a minimum value, 2.67 W/m. K for x = 0.20 ceramics at 973 K. A maximum thermoelectric figure of merit, ZT = 0.30 at 973 K was reached for Sr0.7La0.1Sm0.1TiO3-δ ceramics, which is 20 % higher than the maximum value reported previously for La-Sm electron doped SrTiO3 ceramics.

Thermoelectric Properties of P-Type (Bi1−xSbx)2Te3 Fabricated by Mechanical Alloying Process

1997 ◽  
Vol 478 ◽  
Author(s):  
Boo Yang Jung ◽  
Jae Shik Choi ◽  
Tae Sung Oh ◽  
Dow-Bin Hyun
Keyword(s):  
Mechanical Alloying ◽  
Thermoelectric Properties ◽  
Hot Pressing ◽  
Alloy Powder ◽  
Figure Of Merit ◽  
Processing Time ◽  
Pressing Temperature ◽  
Acceptor Dopant ◽  
Maximum Value ◽  
P Type

AbstractThermoelectric properties of polycrystalline (Bi1−xSbx)2Te3 (0.75 ≤ x ≤ 0.85), fabricated by mechanical alloying and hot pressing methods, have been investigated. Formation of (Bi0.25Sb0.75)2Te3 alloy powder was completed by mechanical alloying for 5 hours at ball- to-material ratio of 5: 1, and processing time for (Bi1−xSbx)2Te3 formation increased with Sb2Te3 content x. When (Bi0.25Sb0.75)2Te3 was hot pressed at temperatures ranging from 300°C to 550°C for 30 minutes, figure-of-merit increased with hot pressing temperature and maximum value of 2.8 × 10−3/K could be obtained by hot pressing at 550°C. When hot pressed at 550°C, (Bi0.2Sb0.8)2Te3 exhibited figure-of-merit of 2.92 × 10−3/K, which could be improved to 2.97 × 10−3/K with addition of 1 wt% Sb as acceptor dopant.

Effect of Ca and/or Mn substitution on thermoelectric properties of SrTiO3

2021 ◽  
Author(s):  
D. Mohan Radheep
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Mixed Valence ◽  
Solid State Reaction Method ◽  
Reaction Method ◽  
Cubic Lattice ◽  
Mn Substitution

Thermoelectric properties have been investigated for Sr0.5Ca0.5Ti1-xMnxO3 (x = 0.25, 0.5, 0.75) and Sr0.75Ca0.25Ti0.75Mn0.25O3 perovskite polycrystalline samples synthesized by solid-state reaction method. Following physical properties such as thermal conductivity, electrical resistivity, Seebeck coefficient, power factor and figure of merit (ZT) were measured. The substitution of Ca2+ in Sr2+ site or/and mixed valence Mn in Ti site creates appreciable enhancement in the thermoelectric properties with an increase of ZT from 0.5 to 0.69 at room temperature. The origin for the enrichment of ZT of the investigated samples around room temperature is due to substitution induced distortion in the cubic lattice.

scholarly journals Bipolar doping and thermoelectric properties of Zintl arsenide Eu5In2As6

2021 ◽  
Author(s):  
Naoki Tomitaka ◽  
Yosuke Goto ◽  
Kota Morino ◽  
Kazuhisa Hoshi ◽  
Yuki Nakahira ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
High Resistivity ◽  
Dimensionless Figure Of Merit ◽  
Recent Developments ◽  
P Type

Zintl compounds exhibit promising thermoelectric properties because of the feasibility of the chemical tuning of their electrical and thermal transport. While most Zintl pnictides are known to show p-type polarity, recent developments in high-performance n-type Mg3Sb2-based thermoelectric materials have encouraged further identification of n-type Zintl pnictides. In this study, we demonstrate the bipolar dopability of the Zintl arsenide Eu5In2As6. The electrical resistivity at 300 K with n-type polarity was decreased to 7.6 x 10^-1 ohmcm using La as an electron dopant. In contrast to the relatively high resistivity of n-type Eu5In2As6, the p-type resistivity at 300 K was decreased to 5.9 x 10^-3 ohmcm with a carrier concentration of 2.8 x 10^20 /cm3 using Zn as a hole dopant. This doping asymmetry is discussed in terms of the weighted mobility of electrons and holes. Furthermore, a very low lattice thermal conductivity of 0.7 W/mK was observed at 773 K, which is comparable to that of the Sb-containing analogue Eu5In2Sb6. The dimensionless figure of merit ZT = 0.29 at 773 K for Zn-doped p-type Eu5In2As6. This study shows that bipolar dopable Eu5In2As6 can be a platform to facilitate a better understanding of the doping asymmetry in Zintl pnictides.

Thermoelectric properties of Ru and In substituted misfit-layered Ca3Co4O9

2013 ◽  
Vol 1543 ◽  
pp. 83-92 ◽  
Author(s):  
Gesine Saucke ◽  
Sascha Populoh ◽  
Nina Vogel-Schäuble ◽  
Leyre Sagarna ◽  
Kailash Mogare ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Low Temperatures ◽  
Figure Of Merit ◽  
Reaction Route ◽  
Promising Strategy ◽  
Maximum Value ◽  
Solid State Reaction Route ◽  
P Type

ABSTRACTAs an approach to improve the thermoelectric properties of the polycrystalline Ca3Co4O9 misfit-layered oxide, substitutions of Co2+…4+ with the heavier cations Ru3+/4+ and In3+ were tested. Polycrystalline samples Ca3Co4-xRuxO9 and Ca3Co4-xInxO9 (0 < x < 0.21) were prepared via a solid-state-reaction route. For each sample the crystal structure was analyzed and a complete thermoelectric characterization was done within a temperature range of 300 K < T < 1125 K.Both substitution strategies resulted in a significant decrease of the thermal conductivity (κ). For the In3+-substituted samples the decrease of the Seebeck coefficient (α) balanced the κ reduction so that no overall enhancement of the figure of merit (ZT) was found. The Ru3+/4+ substitution reduced the p-type carrier concentration and thus increases the electrical resistivity (ρel), while α became larger at low temperatures. Despite the reduction of the power factor, a small enhancement in ZT was observed in the case of x = 0.1 Ru substitution, due to the strong κ reduction. Considering the observed preferred orientation of the Ru-substituted crystallites, a maximum value of ZT = 0.14 perpendicular to the pressing direction is found at T = 1125 K, indicating that Ru substitution is a promising strategy for a further ZT improvement.

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