Thermoelectric Properties of Co1-xNbxSb3 Prepared by Induction Melting

2005 ◽  
Vol 486-487 ◽  
pp. 602-605 ◽  
Author(s):  
J.B. Park ◽  
S.-W. You ◽  
K.W. Cho ◽  
J.I. Lee ◽  
Soon Chul Ur ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Induction Melting ◽  
Thermoelectric Power Factor ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
High Temperature Maximum ◽  
Higher Temperature ◽  
Nb Doping ◽  
P Type

Induction melting was attempted to prepare the undoped and Nb-doped CoSb3 compounds, and their thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by induction melting and subsequent annealing at 400°C for 2 hours in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased withincreasing temperature, indicating mixed behaviors of metallic and semiconducting conductions. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with the increasing amount of Nb doping, mainly originated from the Seebeck coefficient variation.

Thermoelectric Properties of Co1-xNbxSb3 Prepared by Induction Melting

2005 ◽  
Vol 486-487 ◽  
pp. 554-557
Author(s):  
J.B. Park ◽  
S.-W. You ◽  
K.W. Cho ◽  
J.I. Lee ◽  
Soon Chul Ur ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Thermoelectric Properties ◽  
Induction Melting ◽  
Thermoelectric Power Factor ◽  
Seebeck Coefficients ◽  
High Temperature Maximum ◽  
Higher Temperature ◽  
Nb Doping ◽  
Increasing Temperature ◽  
P Type

Induction melting was attempted to prepare the undoped and Nb-doped CoSb3 compounds, and their thermoelectric properties were investigated. Single phase d-CoSb3 was successfully obtained by induction melting and subsequent annealing at 400°C for 2 hours in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased with increasing temperature, indicating mixed behaviors of metallic and semiconducting conductions. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with the increasing amount of Nb doping, mainly originated from the Seebeck coefficient variation.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

Preparation and Thermoelectric Properties of LaCoO3 Ceramics

2010 ◽  
Vol 434-435 ◽  
pp. 404-408 ◽  
Author(s):  
Li Fu ◽  
Jing Feng Li
Keyword(s):  
Electrical Conductivity ◽  
Solid State ◽  
Thermoelectric Properties ◽  
Sintering Temperature ◽  
Conventional Solid State Reaction ◽  
Seebeck Coefficients ◽  
Different Temperatures ◽  
Higher Temperature ◽  
Increasing Temperature ◽  
Semiconducting Behavior

LaCoO3 ceramics were prepared by conventional solid state reaction and normal sintering at the temperatures ranging from 1373 to 1523 K. The sintered densities increased with increasing sintering temperature and exceeded 90 % of the theoretical values when sintered above 1473 K. The thermoelectric properties of the samples sintered at different temperatures were investigated from 323 to 673 K. The LaCoO3 samples showed a negative Seebeck coefficient, whose absolute values decreased dramatically with increasing temperature in the range of 323 to 460 K, then changed to a positive value and lightly decreased above 460 K. The electrical conductivity increased with increasing temperature, indicating a semiconducting behavior. The Seebeck coefficients showed little difference between the samples sintered at different temperatures, but the power factor of the sample sintered at a higher temperature was larger because of the higher electrical conductivity.

scholarly journals Charge Transport and Thermoelectric Properties of Sn-Doped Tetrahedrites Cu12Sb4-ySnyS13

2021 ◽  
Vol 59 (10) ◽  
pp. 736-743
Author(s):  
Hee-Jae Ahn ◽  
Il-Ho Kim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Charge Transport ◽  
Thermoelectric Properties ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Sn Doping ◽  
Seebeck Coefficients ◽  
P Type ◽  
Sn Substitution

In this study, tetrahedrite compounds doped with Sn were prepared by mechanical alloying and hot pressing, and their charge transport and thermoelectric properties were analyzed. X-ray diffraction analysis revealed that both the synthetic powders and sintered bodies were synthesized as a single tetrahedrite phase without secondary phases. Densely sintered specimens were obtained with relatively high densities of 99.5%-100.0% of the theoretical density, and the component elements were distributed uniformly. Sn was successfully substituted at the Sb site, and the lattice constant increased from 1.0348 to 1.0364 nm. Positive signs of the Hall and Seebeck coefficients confirmed that the Sn-doped tetrahedrites were p-type semiconductors. The carrier concentration decreased from 1.28 × 1019 to 1.57 × 1018 cm-3 as the Sn content decreased because excess electrons were supplied by doping with Sn4+ at the Sb3+ site of the tetrahedrite. The Seebeck coefficient increased with increasing Sn content, and Cu12Sb3.6Sn0.4S13 exhibited maximum values of 238-270 µVK-1 at temperatures of 323-723 K. However, the electrical conductivity decreased as the amount of Sn doping increased. Thus, Cu12Sb3.9Sn0.1S13 exhibited the highest electrical conductivity of (2.24-2.40) × 104 Sm-1 at temperatures of 323-723 K. A maximum power factor of 0.73 mWm-1K-2 was achieved at 723 K for Cu12Sb3.9Sn0.1S13. Sn substitution reduced both the electronic and lattice thermal conductivities. The lowest thermal conductivity of 0.49-0.60 Wm-1K-1 was obtained at temperatures of 323-723 K for Cu12Sb3.6Sn0.4S13, where the lattice thermal conductivity was dominant at 0.49-0.57 Wm-1K-1. As a result, a maximum dimensionless figure of merit of 0.66 was achieved at 723 K for Cu12Sb3.9Sn0.1S13.

Thermoelectric Properties of Co1-xFexSb3 Prepared by Encapsulated Induction Melting

2007 ◽  
Vol 124-126 ◽  
pp. 939-942 ◽  
Author(s):  
Kwan Ho Park ◽  
Soon Chul Ur ◽  
Il Ho Kim
Keyword(s):  
Heat Treatment ◽  
Thermoelectric Properties ◽  
Single Phase ◽  
Solubility Limit ◽  
Subsequent Heat Treatment ◽  
Optimum Composition ◽  
Induction Melting ◽  
Fe Doping ◽  
Seebeck Coefficients ◽  
P Type

Co1-xFexSb3 skutterudites were synthesized by encapsulated induction melting and their thermoelectric properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent heat treatment at 773K for 24 hours in vacuum. However, δ-CoSb3 was decomposed to FeSb2 and Sb when x≥0.3, which means that the solubility limit of Fe to Co is x<0.3. The positive signs of Seebeck coefficients for all Fe-doped specimens revealed that Fe atoms acted as p-type dopants by substituting Co atoms. Thermoelectric properties were remarkably enhanced by Fe doping and optimum composition was found to be Co0.7Fe0.3Sb3 in this study.

scholarly journals Charge Transport and Thermoelectric Properties of Sn-Doped Tetrahedrites Cu12Sb4-ySnyS13

2021 ◽  
Vol 59 (10) ◽  
pp. 724-731
Author(s):  
Hee-Jae Ahn ◽  
Il-Ho Kim
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Charge Transport ◽  
Thermoelectric Properties ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Sn Doping ◽  
Seebeck Coefficients ◽  
P Type ◽  
Sn Substitution

In this study, tetrahedrite compounds doped with Sn were prepared by mechanical alloying and hot pressing, and their charge transport and thermoelectric properties were analyzed. X-ray diffraction analysis revealed that both the synthetic powders and sintered bodies were synthesized as a single tetrahedrite phase without secondary phases. Densely sintered specimens were obtained with relatively high densities of 99.5%-100.0% of the theoretical density, and the component elements were distributed uniformly. Sn was successfully substituted at the Sb site, and the lattice constant increased from 1.0348 to 1.0364 nm. Positive signs of the Hall and Seebeck coefficients confirmed that the Sn-doped tetrahedrites were p-type semiconductors. The carrier concentration decreased from 1.28 × 1019 to 1.57 × 1018 cm-3 as the Sn content decreased because excess electrons were supplied by doping with Sn4+ at the Sb3+ site of the tetrahedrite. The Seebeck coefficient increased with increasing Sn content, and Cu12Sb3.6Sn0.4S13 exhibited maximum values of 238-270 µVK-1 at temperatures of 323-723 K. However, the electrical conductivity decreased as the amount of Sn doping increased. Thus, Cu12Sb3.9Sn0.1S13 exhibited the highest electrical conductivity of (2.24-2.40) × 104 Sm-1 at temperatures of 323-723 K. A maximum power factor of 0.73 mWm-1K-2 was achieved at 723 K for Cu12Sb3.9Sn0.1S13. Sn substitution reduced both the electronic and lattice thermal conductivities. The lowest thermal conductivity of 0.49-0.60 Wm-1K-1 was obtained at temperatures of 323-723 K for Cu12Sb3.6Sn0.4S13, where the lattice thermal conductivity was dominant at 0.49-0.57 Wm-1K-1. As a result, a maximum dimensionless figure of merit of 0.66 was achieved at 723 K for Cu12Sb3.9Sn0.1S13.

scholarly journals The Effects of Ba0.85Ca0.15Zr0.1Ti0.9O3 Addition on the Phase, Microstructure, and Thermoelectric Properties of Ca3Co4O9 Ceramics

2021 ◽  
Author(s):  
Panupong JAIBAN ◽  
Pimpilai WANNASUT ◽  
Anucha WATCHARAPASORN
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
High Temperature ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Charge Carrier Concentration ◽  
Thermoelectric Device ◽  
Thermoelectric Power Factor ◽  
Seebeck Coefficients ◽  
Solid State Sintering

Abstract In this work, the influences of Ba0.85Ca0.15Zr0.1Ti0.9O3 (BCZT) addition on phase, microstructure, and thermoelectric properties of Ca3Co4O9 (CCO) were investigated. (1-x)CCO-(x)BCZT ceramics where x = 0, 0.003, 0.005, and 0.010 were fabricated successfully via a conventional solid-state sintering at 1,223 K for 24 hrs. The substitution of BCZT introduced the chemical defects (V''Co, V'''Co, V''Ca) in CCO ceramic, which increased charge carrier concentration and enhanced the electrical conductivity. The presence of Co3+ improved the Seebeck coefficients of CCO ceramic. The thermal conductivity of CCO ceramic decreased when BCZT was added. The addition of BCZT at x = 0.010 promoted the highest thermoelectric power factor (PF~235 mW/mK2), and the highest figure of merit (ZT~0.5) at 800 K, which present this ceramic an alternative p-type oxide thermoelectric for a high-temperature thermoelectric device.

Enhanced thermoelectric properties of the hole-doped Bi2−xKxSr2Co2Oy ceramics

2015 ◽  
Vol 29 (28) ◽  
pp. 1550192 ◽  
Author(s):  
Feng Gao ◽  
Qinglin He ◽  
Ruijuan Cao ◽  
Fang Wu ◽  
Xing Hu ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Solid State Reaction Method ◽  
Undoped Sample ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Element Doping ◽  
P Type ◽  
Remarkable Reduction

In this paper, the influence of K element doping on the thermoelectric properties of the [Formula: see text] (x = 0.00, 0.05, 0.10, 0.15, and 0.20) samples prepared by the solid-state reaction method were investigated from 333 K to 973 K. It was shown that due to the p-type K doping the electrical resistivity of the doped sample can be reduced remarkably as compared with the undoped sample, especially for the optimum doped sample [Formula: see text]. The Seebeck coefficients of the K doped samples have only a slight decrease as compared with the undoped sample. As a result of the remarkable reduction of the electrical resistivity the power factor of the doped sample have a significant improvement. The thermal conductivity of the samples is depressed due to the defects caused by K doping. As an overall result, the dimensionless figure of merit (ZT) of the [Formula: see text] sample reaches a maximum value of 0.3 at 973 K, being 93% higher than that of the undoped sample.

Enhanced thermoelectric properties of Hg-doped Cu2Se

2018 ◽  
Vol 32 (08) ◽  
pp. 1850087 ◽  
Author(s):  
Erying Li ◽  
Siqi Wang ◽  
Zheng Zhu ◽  
Ruijuan Cao ◽  
Xing Hu ◽  
...  
Keyword(s):  
Hydrothermal Synthesis ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Cation Vacancies ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Electrical Resistivities ◽  
Higher Temperature ◽  
Bulk Alloys ◽  
Thermal Conductivities

The Cu[Formula: see text]Hg[Formula: see text]Se (x = 0, 0.05, 0.10 and 0.15) nanopowders were fabricated using the hydrothermal synthesis, and then hot-pressed into bulk alloys. The effects of Hg doping on the thermoelectric (TE) properties of Cu2Se were investigated. The electrical resistivities of all the doped samples are lower than that of the nondoped sample due to the induced cation vacancies. For the x = 0.10 and x = 0.15 samples, Seebeck coefficients increase slightly compared with the nondoped sample at higher temperature. Except for the sample of x = 0.05, the thermal conductivities of x = 0.10 and x = 0.15 samples are substantially lower than that of the x = 0.00 sample. As an overall result, the maximum value of ZT, which is the dimensionless TE figure of merit, reaches 1.50 at 600[Formula: see text]C for the x = 0.10 sample.

LOW TEMPERATURE THERMOELECTRIC PROPERTIES AND AGING PHENOMENA OF NANOSTRUCTURED p-TYPE Bi2-XSbXTe3 (x = 1.46, 1.48, 1.52 AND 1.55)

2013 ◽  
Vol 06 (05) ◽  
pp. 1340008 ◽  
Author(s):  
DALE HITCHCOCK ◽  
YEN-LIANG LIU ◽  
YUFEI LIU ◽  
TERRY M. TRITT ◽  
JIAN HE ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Low Temperature ◽  
Thermoelectric Properties ◽  
Optimal Composition ◽  
Ambient Conditions ◽  
Bulk Materials ◽  
The Past ◽  
Aging Phenomena ◽  
P Type ◽  
Cold Pressed

Over the past decade the widely used p-type ( Bi 2-x Sb x) Te 3 bulk thermoelectric materials have been subject to various nanostructuring processes for higher thermoelectric performance. However, these nanostructuring processing were conducted on compositions optimized for bulk materials (x ~ 1.52–1.55). This leads to the question of whether the optimal composition for bulk materials is the same for their nanoscale counterparts. In this work we hydrothermally grew Bi 2-x Sb x Te 3 nanopowders (nominally, x = 1.46, 1.48, 1.52 and 1.55) and measured their thermoelectric properties on cold-pressed vacuum-sintered pellets (74–78% of the theoretical density) below 300 K. The measurements were conducted 18 months apart to probe the aging phenomena, with the samples stored in ambient conditions. We have found that (i) the peak of thermopower shifts to lower temperatures upon nanostructuring but it shifts back to higher temperatures upon aging; (ii) the electrical conductivity degrades by a factor of 1.5–2.3 upon aging while the temperature dependence is largely retained; and (iii) the ZT of freshly made samples is sensitive to the x value, a maximum ZT ~ 1.25(~ 0.62) at ~ 270 K (~ 255 K) was attained in the freshly made sample x = 1.55(x = 1.46), respectively; while the ZT of aged samples is significantly lowered by a factor of 2–4 but lesser x-dependent. These observations have been discussed in the context of charge buildup and compensation at grain boundaries.

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