Investigation of 〈100〉-oriented etching pattern on diamond coated with Ni and Cu

2020 ◽  
Vol 34 (17) ◽  
pp. 2050155
Author(s):  
Naiyuan Cui ◽  
Fei Wang ◽  
Hanyuan Ding ◽  
Lei Guo
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Etching Pattern ◽  
Etching Mechanism ◽  
Atomic Force ◽  
Scanning Electron ◽  
Reactive Gas

Diamond etching of [Formula: see text] orientation is processed in chemical vapor deposition (CVD) chamber using H2 as reactive gas. Etching process happens on diamond substrates using a variety of etch mask materials including copper and nickel. Scanning electron microscope (SEM) and atomic force microscope (AFM) show different kinds of diamond etching pattern of two mask materials. It is observed that the etching pit of copper is tetrahedron, while the etching pit of nickel is step structure. This indicates diverse etching mechanism of diamond etched by different metal. Observing the surface etching topography of diamond and analyzing the etching mechanism of different metal can help study the growth of diamond by CVD and controllable etching of diamond.

Effect of Experimental Factors in the Growth of Carbon Nanotubes from CO2 by MPECVD Process

2014 ◽  
Vol 14 (1) ◽  
pp. 38
Author(s):  
Fritzie Hannah Baldovino ◽  
Joseph L. Auresenia
Keyword(s):  
Carbon Nanotubes ◽  
Gas Chromatography ◽  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Silicon Wafer ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Scanning Electron

The effects of experimental factors such as type of catalyst (nickel and cobalt) and substrate (iron and silicon wafer) in the growth of carbon nanotubes (CNT) from CO2 by microwave plasma-enhanced chemical vapor deposition (MPECVD) was systematically studied. Catalyst size and CNT grown were examined using scanning electron microscope (SEM). Furthermore, gas chromatography (GC) was used to analyze the effluent gas. Moreover, suitable type of catalyst and substrate were determined in terms on the amount of CNT grown, purity, and carbon conversion.Keywords : carbon nanotubes, chemical vapor deposition, nanotechnology

Synthesis and Investigation of MoO3 Microfilms and Nanorods by Thermal Chemical Vapor Deposition

2016 ◽  
Vol 690 ◽  
pp. 23-27
Author(s):  
Pitchanunt Chaiyo ◽  
Ladarat Kanlayavisut ◽  
Rinnatha Vongwatthaporn ◽  
Bok Ki Min ◽  
Seong Jun Kim ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Photoemission Spectroscopy ◽  
X Ray ◽  
Thermal Chemical Vapor Deposition ◽  
Scanning Electron

MoO3 microfilms and nanorods can be synthesized by using the powder of MoS2 as starting materials by thermal chemical vapor deposition. The prepared products on substrates were investigated by field emission scanning electron microscope (FESEM), X-ray photoemission spectroscopy (XPS) and Raman spectroscopy. FESEM images showed the uniformly microfilms and nanorods-like with diameter around 50-100 nm and length of about through 5 μm, respectively. XPS patterns and Raman shifts revealed the prepared products consisting of MoO3 structure phases.

scholarly journals Synthesis of carbon nanostructures using microwave enhanced chemical vapor deposition and its potential application to ammonia sensing

2021 ◽  
pp. 44-47
Author(s):  
Nicodemus Kure ◽  
Zainab Yunusa ◽  
Hamidon Niza ◽  
Isaac Daniel ◽  
Ibrahim Lakin
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Vapor Deposition ◽  
Potential Application ◽  
Carbon Nanostructures ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Scanning Electron

In this paper, Carbon Nanostructures (CNS) were directly synthesized on gallium orthophosphate (GaPO4). An alternative microwave enhanced chemical vapor deposition (MECVD) technique was used to synthesized the CNS via commercial microwave oven with operating power of 600 W at 2.45 GHz. Microwave heating provides the temperature for catalytic decomposition of polyethylene at 750 °C for 4 minutes under atmosperic pressure of 0.81 mbar. Characterization of the as-grown CNS was carried out using Raman spectroscopy and Field Emission Scanning electron microscope (FESEM). Raman spectroscopic investigation reveals the CNS quality of 0.92 and the field emission Scanning electron microscope (FESEM) analysis shows twisted hollow-like CNS structures. The material was deployed as a sensor without any post treatment so as to investigate its potential application in the sensor industry. Different concentrations of ammonia (NH3) gas from 0.06% to 1% were exposed.

Real-time Observation of Aluminum Chemical Vapor Deposition in an Environmental Scanning Electron Microscope

1998 ◽  
Vol 4 (5) ◽  
pp. 497-503 ◽  
Author(s):  
David L. Linam ◽  
Jeff Drucker
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Real Time ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Environmental Scanning Electron Microscope ◽  
Environmental Scanning ◽  
Time Observation ◽  
Scanning Electron

A technique has been developed to provide real-time imaging, with several nanometer resolution, of organometallic chemical vapor deposition (CVD) by scanning electron microscopy under conditions approaching those used in the microelectronics industry. The technique involves modifications to an environmental scanning electron microscope (ESEM) to facilitate organometallic precursor gas handling and sample heating. To demonstrate the usefulness of this technique for studying the microstructural evolution of CVD-grown metal films, results of Al/SiO2 CVD experiments are presented.

scholarly journals Investigasi Pengaruh Daya RF terhadap Morfologi Silicon Nanowire pada Penumbuhan dengan Metode PECVD

Jurnal Fisika ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 1-8
Author(s):  
Aulia Fikri Hidayat ◽  
Toto Winata
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Vapor Deposition ◽  
Silicon Nanowire ◽  
Chemical Vapor ◽  
Scanning Electron

Silicon nanowire (SiNW) merupakan material berstruktur nano yang pemanfaatannya cukup luas, diantaranya yaitu sebagai material divais elektronik, sebagai material biosensor, dan sebagai sistem pembawa obat. Penumbuhan SiNW salah satunya dapat dilakukan dengan metode PECVD (plasma-enhanced chemical vapor deposition). Nikel digunakan sebagai katalis dalam penumbuhan SiNW pada penelitian ini. Lapisan tipis nikel diberi perlakuan annealing pada suhu 600°C selama 6 jam untuk memperoleh butiran nikel sebagai pemandu tumbuhnya nanowire. Penumbuhan SiNW dilakukan dengan metode PECVD dengan memvariasikan daya frekuensi radio (RF) reaktor sebesar 8 watt, 10 watt, dan 20 watt. Diameter rata-rata untuk daya 8 watt, 10 watt, dan 20 watt berturut-turut adalah 1143,17 nm; 1490,27 nm; dan 2605,26 nm. Morfologi permukaan dilihat dengan pencitraan scanning electron microscope (SEM). Rasio aspek wire dengan daya RF penumbuhan 8 watt, 10 watt, dan 20 watt diinvestigasi dengan pencitraan SEM penampang lintang dengan hasil berturut-turut sebesar 23,3; 3,13; dan 0,33.

Preparation of Diamond Coatings on Alumina by Hot Filament Chemical Vapor Deposition

2015 ◽  
Vol 816 ◽  
pp. 138-142
Author(s):  
Jun Sheng Li ◽  
Chao Huang ◽  
Hao Luo ◽  
Qiu Ping Wei ◽  
Yong Jiang Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Coatings ◽  
Deposition Chamber ◽  
Composition And Structure ◽  
Hot Filament ◽  
Scanning Electron

Diamond coatings were prepared on alumina by hot filament chemical vapor deposition, which constituted an insulator used in a laser pump. The composition and morphologies of the diamond coatings were characterized by Raman spectra and scanning electron microscope. The effects of the pressure of the deposition chamber and the distance from the filament to the base on the composition and structure of the deposited diamond coatings were studied.

Catalyst-Free InGaP Nanoneedles Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

2013 ◽  
Vol 333-335 ◽  
pp. 1975-1978
Author(s):  
Peng Zhang ◽  
Yan Liu ◽  
Jing Wei Guo ◽  
Xiao Pin Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Sem Images ◽  
Catalyst Free ◽  
Metalorganic Chemical ◽  
Scanning Electron

Catalyst-free InGaP nanoneedles were grown on Si substrate via metalorganic chemical vapor deposition. From scanning electron microscope (SEM) images, various nanoneedles were observed and the relevant growth mechanism was discussed.

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