Voltage-driven mutual phase locking of planar nano-oscillators

2021 ◽  
Vol 35 (05) ◽  
pp. 2150072
Author(s):  
Fang Liang ◽  
Hanbin Wang ◽  
Jintao Pan ◽  
Jun Li ◽  
Kunyuan Xu ◽  
...  
Keyword(s):  
Electron Scattering ◽  
Field Effect ◽  
High Speed ◽  
Phase Locking ◽  
Frequency Doubling ◽  
Signal Frequency ◽  
Ensemble Monte Carlo ◽  
Locking Range ◽  
Gate Effect ◽  
Electronic Oscillators

Phase locking is a common phenomenon related to coupled oscillators that play an important role in various natural and artificial systems. In this study, we analyzed the possibility of dynamically controlling such a phenomenon between Gunn-effect-based planar nanooscillators via an ensemble Monte Carlo (EMC) method. We found that between two oscillators in parallel with each other, there are two coupling paths, which could be opened or closed via structure determined inner-field effect. One of the paths results in in-phase locking, and whereas the other gives rise to anti-phase locking. Furthermore, by combining the inner-field effect and a top-gate effect, one could dynamically control the phase locking via the top gate’s bias. EMC results showed that the transition time from in-phase to anti-phase locking can be less than 0.2 ns. Accompanied by this was a signal-frequency doubling, from approximately 0.33 THz to approximately 0.66 THz. Based on Adler’s theory, we confirmed the phase locking and concluded that the phase-locking transition could not be properly modeled unless electron-scattering noise was included. Moreover, we obtained the locking range and the frequency fluctuation due to electron-transport noise. The proposed method is convenient and may be applied to other electronic oscillators, thereby aiding in developing high-speed beam-steerable THz sources.

Temporal Properties of Responses to Broadband Noise in the Auditory Nerve

2004 ◽  
Vol 91 (5) ◽  
pp. 2051-2065 ◽  
Author(s):  
Dries H. G. Louage ◽  
Marcel van der Heijden ◽  
Philip X. Joris
Keyword(s):  
Fourier Analysis ◽  
Auditory Nerve ◽  
Phase Locking ◽  
Strong Dependence ◽  
Peak Height ◽  
Nerve Fibers ◽  
Broadband Noise ◽  
Temporal Information ◽  
Temporal Behavior ◽  
Locking Range

Temporal information in the responses of auditory neurons to sustained sounds has been studied mostly with periodic stimuli, using measures that are based on Fourier analysis. Less information is available on temporal aspects of responses to nonperiodic wideband sounds. We recorded responses to a reference Gaussian noise and its polarity-inverted version in the auditory nerve of barbiturate-anesthetized cats and used shuffled autocorrelograms (SACs) to quantify spike timing. Two metrics were extracted from the central peak of autocorrelograms: the peak-height and the width at halfheight. Temporal information related to stimulus fine-structure was isolated from that to envelope by subtracting or adding responses to the reference and inverted noise. Peak-height and halfwidth generally behaved as expected from the existing body of data on phase-locking to pure tones and sinusoidally amplitude-modulated tones but showed some surprises as well. Compared with synchronization to low-frequency tones, SACs reveal large differences in temporal behavior between the different classes of nerve fibers (based on spontaneous rate) as well as a strong dependence on characteristic frequency (CF) throughout the phase-locking range. SACs also reveal a larger temporal consistency (i.e., tendency to discharge at the same point in time on repeated presentation of the same stimulus) in the responses to the stochastic noise stimulus than in the responses to periodic tones. Responses at high CFs reflect envelope phase-locking and are consistent with previous reports using sinusoidal AM. We conclude that the combined use of broadband noise and SAC analysis allow a more general characterization of temporal behavior than periodic stimuli and Fourier analysis.

AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS

2008 ◽  
Vol 18 (04) ◽  
pp. 913-922 ◽  
Author(s):  
SIDDHARTH RAJAN ◽  
UMESH K. MISHRA ◽  
TOMÁS PALACIOS
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Digital Circuits ◽  
Field Effect Transistors ◽  
Rf Power ◽  
Power Performance ◽  
Future Directions ◽  
Recent Developments ◽  
Gan Hemts ◽  
State Of Art

This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

High-speed digital family using field effect diode

2003 ◽  
Vol 39 (4) ◽  
pp. 345 ◽  
Author(s):  
I. Sheikhian ◽  
F. Raissi
Keyword(s):  
Field Effect ◽  
High Speed

A Piezoelectric Droplet Generating Device for Experiment in Successive Droplets Impacting Onto Solid Surface

2018 ◽  
Author(s):  
Jianxin Li ◽  
Huang Zhang ◽  
Yuzheng Li ◽  
Qianfeng Liu ◽  
Hanliang Bo
Keyword(s):  
Solid Surface ◽  
High Speed ◽  
Experimental Studies ◽  
Structure Design ◽  
Nozzle Diameter ◽  
Signal Frequency ◽  
Duty Ratio ◽  
Droplet Generator ◽  
Uniform Size ◽  
Drop On Demand

The outcomes of successive droplets impacting onto solid surface of the steam separator in a nuclear power system’s steam generator has a strong effect on the separating efficiency. Due to amounts of influencing factors, experimental research is an important method to study the phenomena of droplet-wall collision. However, because it is hard to generator continuous droplets with controllable uniform size and frequency, experimental studies about successive droplets impacting on solid surface are relative limited. In this study, a novel drop-on-demand (DOD) droplet generator is designed and fabricated based on piezoelectric ceramics, in which successive droplets with a uniform diameter can be generated. Firstly, the structure design of the DOD droplet generator, the setup of the control system and working principle are described in detail in this paper. Then the droplet generating performance of the device under different signal frequency fs, signal amplitude U, duty ratio Dr, and nozzle diameter Dn are investigated experimentally using a high-speed camera at 4000 fps. Finally, the influence of the signal frequency fs, voltage U, duty ratio Dr and nozzle diameter Dn on the diameter of droplet Dd is discussed. A test of successive droplets generated by the device impacting on an aluminum plate is conducted.

scholarly journals Graphene–Si CMOS oscillators

Nanoscale ◽  
2019 ◽  
Vol 11 (8) ◽  
pp. 3619-3625 ◽  
Author(s):  
Carlo Gilardi ◽  
Paolo Pedrinazzi ◽  
Kishan Ashokbhai Patel ◽  
Luca Anzi ◽  
Birong Luo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
New Class ◽  
Graphene Field Effect Transistor ◽  
Cmos Oscillators ◽  
Effect Transistor ◽  
Electronic Oscillators

The ambipolarity of graphene is exploited to realize a new class of electronic oscillators by integrating a graphene field-effect transistor with Si CMOS logic.

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