PROPERTIES AND PREPARATION OF AlN THIN FILMS BY REACTIVE LASER ABLATION WITH NITROGEN DISCHARGE

2000 ◽  
Vol 14 (14) ◽  
pp. 523-530 ◽  
Author(s):  
HONG-HAI WANG
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Preferred Orientation ◽  
Photoelectron Spectra ◽  
Breakdown Field ◽  
Orientation Relationships ◽  
X Ray ◽  
Deposition Parameters ◽  
Nitrogen Discharge

Highly oriented AlN thin films have been deposited on (100) and (111) Si wafers by reactive laser ablation with nitrogen discharge at low substrate temperature. The composition and microstructure of films strongly depend on deposition parameters. X-ray photoelectron spectra showed that nitrogen discharge is of great importance to the composition of the films. The effect of substrate temperature on the preferred orientation of films has been investigated carefully by means of X-ray diffraction. Under optimizing deposition parameters — 1.0 J/cm 2 laser fluence, 5 Hz pulse frequency, 100 mTorr nitrogen pressure, 650 V discharge voltage and 200°C substrate temperature — the AlN films deposited on silicon substrates were smooth, dense and stoichiometric with very good preferred orientation. The orientation relationships between films and substrates were AlN(100)//Si(100) and AlN(110)//Si(111). The average refractive index was found to be 2.05 with the usage of an ellipsometer. The films had a band gap of 6.2 eV as measured by UV–visible absorption. The IR spectrum had an absorption characteristic of AlN. Examination of electric properties of films that was carried out on the metal–insulator–semiconductor structure of Au/AlN/Si showed that the dielectric constant, resistivity and breakdown field were 8.3, 2 × 1013 Ω· cm and 3 × 106 V/cm , respectively.

Laser Ablation of Highly Oriented Cdse Thin Films and Cdte/Cdse Multilayers on Silicon Substrate

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Ambrico ◽  
R. Martino ◽  
D. Smaldone ◽  
V. Capozzi ◽  
G. Lorusso ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Silicon Substrate ◽  
X Ray ◽  
Si Films ◽  
Polycrystalline Structures ◽  
High Orientation ◽  
Deposited Films ◽  
Laser Ablation Technique

ABSTRACTLaser ablation technique has been successfully used for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(l11) substrates. X-ray analysis showed that CdSe/Si films were highly oriented. Their orientation changed from (100) to (002) by varying the substrate temperature from 473 to 673K. High orientation was also obtained on multilayered polycrystalline structures of CdSe and CdTe on Si(lll). Photoluminescence experiments have also been carried out on the deposited films.

Improvement of Thermal Stability of ZrB2/Si3N4 Coatings as High-Temperature Solar Selective Absorbers

2014 ◽  
Vol 521 ◽  
pp. 581-585
Author(s):  
Yao Ming Sun ◽  
Xiu Di Xiao ◽  
Guan Qi Chai ◽  
Gang Xu ◽  
Bin Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
High Temperature ◽  
Substrate Temperature ◽  
Bias Voltage ◽  
X Ray Diffraction ◽  
Substrate Bias Voltage ◽  
X Ray ◽  
Deposition Parameters ◽  
Thermal Stability Of

ZrB2 thin films were prepared by DC magnetron sputtering technique. The microstructure, thermal stability and optical properties of thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrophotometer. The compactness of ZrB2 thin films was studied to improve the thermal stability by optimizing the deposition parameters. The compactness and thermal stability of the coatings were improved with the increase of substrate temperature. However, these properties of the coatings were enhanced firstly and then weakened with the increase of substrate bias voltage. The selectivity of sample deposited at high substrate temperature and suitable bias voltage degraded slightly after annealing at 500 °C/100 h in air. This provided a new way to improve the thermal stability of high-temperature solar selective absorber.

Effects of Deposition Parameters on the Structure, Morphology and Chemical Composition of PLZT Thin Films

1994 ◽  
Vol 341 ◽  
Author(s):  
R. M. Ribeiro ◽  
M. J. M. Gomes ◽  
E. De Matos Gomes ◽  
J. A. Ferreira ◽  
P. L. Q. Mantas ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Substrate Temperature ◽  
Laser Fluence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Deposition Parameters ◽  
Structure Morphology ◽  
Plzt Thin Films

AbstractPLZT thin films from a stoichiometric (9/65/35) commercial target were laser deposited using the second and third harmonics of a nanosecond Nd:YAG laser. The films were grown on oriented sapphire substrates and analysed by X-ray diffraction, SEM and EDX techniques. The influence of the deposition parameters laser fluence and substrate temperature on the physical characteristics of the films is presented.

Growth of (110) Oriented YBa2Cu3O7−δ Films by Laser Ablation

1992 ◽  
Vol 285 ◽  
Author(s):  
Neng Y. Chen ◽  
G. Rietveld ◽  
L.W. Lander ◽  
V.C. Matijasevic ◽  
P. Hadley ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Crystal Orientation ◽  
Oriented Growth ◽  
X Ray ◽  
Initial Substrate ◽  
Major Factors

ABSTRACTSeveral attempts have been made by different groups to grow (110) YBa2Cu3O7−δ thin films on (110) substrates. In most of the cases, both (103) and (110) orientations of YBa2Cu3O7−δ have been found in the film. The substrate temperature during deposition is one of the major factors that determines the crystal orientation of the YBa2Cu3O7−δ. In our experiment, effort is made to examine the influence of the initial substrate temperature from 595 °C to 660 °C on the relative amount of (110) and (103) oriented grains. The orientations are determined by x-ray analysis with a Weissenberg camera. The amount of (103) oriented YBa2Cu3O7−δ is reduced systematically with decreasing substrate temperature. At the lowest deposition temperatures we find only (110) oriented growth.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

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