Laser Ablation of Highly Oriented Cdse Thin Films and Cdte/Cdse Multilayers on Silicon Substrate

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Ambrico ◽  
R. Martino ◽  
D. Smaldone ◽  
V. Capozzi ◽  
G. Lorusso ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Silicon Substrate ◽  
X Ray ◽  
Si Films ◽  
Polycrystalline Structures ◽  
High Orientation ◽  
Deposited Films ◽  
Laser Ablation Technique

ABSTRACTLaser ablation technique has been successfully used for the deposition of CdSe and CdTe/CdSe multilayers on Si(100) and Si(l11) substrates. X-ray analysis showed that CdSe/Si films were highly oriented. Their orientation changed from (100) to (002) by varying the substrate temperature from 473 to 673K. High orientation was also obtained on multilayered polycrystalline structures of CdSe and CdTe on Si(lll). Photoluminescence experiments have also been carried out on the deposited films.

Lead Zirconate-Titanate Thin Films Prepared by the Laser Ablation Technique

1990 ◽  
Vol 200 ◽  
Author(s):  
C. K. Chiang ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
P. S. Brody ◽  
J. M. Benedetto
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
X Ray ◽  
Ablation Technique ◽  
Zirconate Titanate ◽  
Deposited Films ◽  
Plate Type ◽  
Laser Ablation Technique

ABSTRACTLead zirconate-titanate (PZT) thin films were prepared by the laser ablation technique. The PZT (Zr/Ti=53/47) target was irradiated using a focused q-switched Nd:YAG laser (15 ns, 100 mJ at 1.064 μ;m). The as-deposited films were amorphous as indicated by X-ray powder patterns, but crystallized readily with brief annealing above 650°C. The dielectric constant and the resistivity of the crystallized films were studied using a parallel-plate type capacitor structure.

PROPERTIES AND PREPARATION OF AlN THIN FILMS BY REACTIVE LASER ABLATION WITH NITROGEN DISCHARGE

2000 ◽  
Vol 14 (14) ◽  
pp. 523-530 ◽  
Author(s):  
HONG-HAI WANG
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Preferred Orientation ◽  
Photoelectron Spectra ◽  
Breakdown Field ◽  
Orientation Relationships ◽  
X Ray ◽  
Deposition Parameters ◽  
Nitrogen Discharge

Highly oriented AlN thin films have been deposited on (100) and (111) Si wafers by reactive laser ablation with nitrogen discharge at low substrate temperature. The composition and microstructure of films strongly depend on deposition parameters. X-ray photoelectron spectra showed that nitrogen discharge is of great importance to the composition of the films. The effect of substrate temperature on the preferred orientation of films has been investigated carefully by means of X-ray diffraction. Under optimizing deposition parameters — 1.0 J/cm 2 laser fluence, 5 Hz pulse frequency, 100 mTorr nitrogen pressure, 650 V discharge voltage and 200°C substrate temperature — the AlN films deposited on silicon substrates were smooth, dense and stoichiometric with very good preferred orientation. The orientation relationships between films and substrates were AlN(100)//Si(100) and AlN(110)//Si(111). The average refractive index was found to be 2.05 with the usage of an ellipsometer. The films had a band gap of 6.2 eV as measured by UV–visible absorption. The IR spectrum had an absorption characteristic of AlN. Examination of electric properties of films that was carried out on the metal–insulator–semiconductor structure of Au/AlN/Si showed that the dielectric constant, resistivity and breakdown field were 8.3, 2 × 1013 Ω· cm and 3 × 106 V/cm , respectively.

In Situ Growth of PbZrxTi1-xO3 Thin Films by Pulsed Laser Deposition

1990 ◽  
Vol 191 ◽  
Author(s):  
D. B. Chrisey ◽  
J. S. Horwitz ◽  
K. S. Grabowski
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Composition And Structure ◽  
Elastic Backscattering ◽  
Deposited Film ◽  
Deposited Films

ABSTRACTWe have investigated the composition and structure of thin films of PbZrxTi1-xO3 (x-0.54) produced in situ by pulsed excimer laser deposition from a stoichiometric pressed oxide target. Thin films were deposited onto (100) MgO and SrTiO3 substrates as a function of substrate temperature between room temperature and 750 °C, and oxygen background pressures between vacuum and 300 mtorr. The deposited films were very smooth with particulates covering less than 0.5% of the surface. Elastic backscattering spectroscopy was used to determine the relative atomic fractions. In the deposited films, the Pb stoichiometry was found to be very sensitive to both the substrate temperature and the O2 background pressure. Above ∼600 °C, the Pb content dropped rapidly with increasing substrate temperature for a 50 mtorr 02 background. At 550 °C the Pb content was near-stoichiometric for O2 background pressures between 200 and 300 mtorr but dropped monotonically to ∼20% of the expected value for depositions in a vacuum (i.e., no O2 background). Over this entire range of pressures and temperatures the Ti/Zr stoichiometry ratio was relatively uneffected. The structure and orientation of the deposited films, as determined by x-ray diffraction, followed the Pb deficiency via the production of other phases and orientations. Crystallation of the deposited film was observed at temperatures as low as 400 °C for 200 mtorr O2 background. At 550 °C and 200 –300 mtorr, (100) oriented PbZrxTi1-xO3 was observed on SrTiO3 substrates.

Growth of (110) Oriented YBa2Cu3O7−δ Films by Laser Ablation

1992 ◽  
Vol 285 ◽  
Author(s):  
Neng Y. Chen ◽  
G. Rietveld ◽  
L.W. Lander ◽  
V.C. Matijasevic ◽  
P. Hadley ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Crystal Orientation ◽  
Oriented Growth ◽  
X Ray ◽  
Initial Substrate ◽  
Major Factors

ABSTRACTSeveral attempts have been made by different groups to grow (110) YBa2Cu3O7−δ thin films on (110) substrates. In most of the cases, both (103) and (110) orientations of YBa2Cu3O7−δ have been found in the film. The substrate temperature during deposition is one of the major factors that determines the crystal orientation of the YBa2Cu3O7−δ. In our experiment, effort is made to examine the influence of the initial substrate temperature from 595 °C to 660 °C on the relative amount of (110) and (103) oriented grains. The orientations are determined by x-ray analysis with a Weissenberg camera. The amount of (103) oriented YBa2Cu3O7−δ is reduced systematically with decreasing substrate temperature. At the lowest deposition temperatures we find only (110) oriented growth.

Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films

2018 ◽  
Vol 17 (03) ◽  
pp. 1760039
Author(s):  
K. M. Dhanisha ◽  
M. Manoj Christopher ◽  
M. Abinaya ◽  
P. Deepak Raj ◽  
M. Sridharan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Smooth Surface ◽  
Deposition Time ◽  
Si Substrate ◽  
X Ray ◽  
Coating Time ◽  
Deposited Films ◽  
Nio Films ◽  
Scanning Electron

The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

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