THERMOELECTRIC EFFECT OF SILICON FILMS WITH SHALLOW- AND DEEP-LEVEL ACCEPTORS

2012 ◽  
Vol 26 (31) ◽  
pp. 1250187 ◽  
Author(s):  
Q. R. HOU ◽  
J. L. SUN ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Deep Level ◽  
Silicon Films ◽  
Thermoelectric Power Factor ◽  
Si Films ◽  
Quartz Substrates ◽  
Co Doped

Crystalline Si films with both shallow- and deep-level acceptors, Al and Cu , have been prepared on glass and quartz substrates by the methods of magnetron sputtering and Al -induced crystallization. Al and Cu are co-added in the Si films intermittently by regular pulse sputtering of Al and Cu targets during deposition of the Si films. By regulating the sputtering times of Al and Cu targets, the amounts of Al and Cu in the Si films can be controlled, and thus the Seebeck coefficient and electrical resistivity of the silicon films can be adjusted. It is found that the Al and Cu co-doped Si film has a larger Seebeck coefficient and a lower electrical resistivity at higher temperatures, as compared with that of only Al -doped Si film. As a result, the thermoelectric power factor of the Al and Cu co-doped Si film is greatly enhanced. The present experimental results will not only help us to understand the basic thermoelectric properties of semiconductors doubly doped with shallow- and deep-level impurities, but also open the possibility of enhancement of thermoelectric power factor by using this concept.

PHONON-DRAG EFFECT OF ULTRA-THIN FeSi2 AND MnSi1.7/FeSi2 FILMS

2011 ◽  
Vol 25 (22) ◽  
pp. 1829-1838 ◽  
Author(s):  
Q. R. HOU ◽  
B. F. GU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Single Crystals ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Low Temperatures ◽  
Room Temperature ◽  
Phonon Drag ◽  
Drag Effect ◽  
Thermoelectric Power Factor

Phonon-drag effect usually occurs in single crystals at very low temperatures (10–200 K). Strong phonon-drag effect is observed in ultra-thin β- FeSi 2 films at around room temperature. The Seebeck coefficient of a 23 nm-thick β- FeSi 2 film can reach -1.375 mV/K at 343 K. However, the thermoelectric power factor of the film is still small, only 0.42×10-3 W/m-K2, due to its large electrical resistivity. When a 27 nm-thick MnSi 1.7 film with low electrical resistivity is grown on it, the thermoelectric power factor of the MnSi 1.7 film can reach 1.5×10-3 W/m-K2 at around room temperature. This value is larger than that of bulk MnSi 1.7 material in the same temperature range.

Synthesis and thermoelectric power factor of LSCO perovskites

2005 ◽  
Vol 886 ◽  
Author(s):  
Julio E. Rodriguez
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Room Temperature ◽  
Morphological Properties ◽  
Measured Temperature ◽  
X Ray Diffraction ◽  
Thermoelectric Power Factor ◽  
X Ray

ABSTRACTMeasurements of Seebeck coefficient, S(T) and electrical resistivity, ρ(T) on polycrystalline La2−xSrxCuO4+d(LSCO) (0<x≤0.2) samples are reported. The Seebeck coefficient is positive in whole measured temperature range (77K and 300K) and it decreases with Sr content. At room temperature S(T) changes from 400 μ/K for the samples with the lowest levels of Sr to 30 μV/K for the samples with the highest Sr levels. The behavior of S(T) fits to Heikes model, which describes the behavior of Seebeck coefficient in systems where the correlated hopping is present. With the Sr content, the electrical resistivity changes its behavior from semiconducting to metallic and it took values from 2.4 to 10−3Ωcm. From S(T) and rho(T) measurements the thermoelectric power factor, PF was obtained. The maximum values for PF were about 5 μW/K2cm in the samples where x= 0.03, which are comparable to the typical values for conventional thermoelectric semiconductors. The structural and morphological properties of the samples were studied by x-ray diffraction analysis and Scanning Electron Microscopy (SEM) respectively. The behavior of transport properties opens de possibility of considering this family of perovskite-compounds as a thermoelectric material which works below room temperature.

Influence of an interlayer on thermoelectric power factor of HMS film on quartz substrate

2014 ◽  
Vol 28 (11) ◽  
pp. 1450087
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen
Keyword(s):  
Electrical Resistivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Quartz Substrate ◽  
Metallic Phase ◽  
The Other ◽  
Thermoelectric Power Factor ◽  
Manganese Silicide ◽  
Lower Electrical Resistivity

The influence of an AlO x oxide or Si interlayer on the thermoelectric power factor of the higher manganese silicide (HMS, MnSi y, y = 1.73–1.75) film deposited on quartz substrate is investigated. The HMS film and the interlayer are prepared on quartz substrate by magnetron sputtering of MnSi 2, Al , Si and Si : B (1 at.% B content) targets. It is found that the metallic phase MnSi is present in the semiconducting HMS film without an interlayer, resulting in a lower Seebeck coefficient, 0.160 mV/K, but not a lower electrical resistivity, 0.021 Ω ⋅cm at 683 K. The thermoelectric power factor is only 122 × 10-6 W/mK2 at 683 K. On the other hand, the metallic phase MnSi disappears and the Seebeck coefficient restores to its high value after using the AlO x oxide or Si interlayer. Besides, the electrical resistivity decreases by using the AlO x oxide or Si : B interlayer. The HMS film with an Si : B interlayer has the highest Seebeck coefficient, 0.247 mV/K, and the lowest electrical resistivity, 0.011 Ω ⋅cm, at 683 K. Thus, the thermoelectric power factor is enhanced and can reach 555 × 10-6 W/mK2 at 683 K.

Dramatic enhancement of thermoelectric power factor in PbTe:Cr co-doped with iodine

2011 ◽  
Vol 98 (26) ◽  
pp. 262101 ◽  
Author(s):  
Biplab Paul ◽  
P. K. Rawat ◽  
P. Banerji
Keyword(s):  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Power Factor ◽  
Co Doped

scholarly journals Influence of crystallinity on the thermoelectric power factor of P3HT vapour-doped with F4TCNQ

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1593-1599 ◽  
Author(s):  
Jonna Hynynen ◽  
David Kiefer ◽  
Christian Müller
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Power Factor ◽  
Order Of Magnitude

The crystallinity of P3HT strongly benefits the electrical conductivity but not Seebeck coefficient, leading to an increase in power factor by one order of magnitude.

Enhancement of thermoelectric power factor in CrSi2 film via Si:B addition

2015 ◽  
Vol 29 (27) ◽  
pp. 1550189
Author(s):  
Q. R. Hou ◽  
B. F. Gu ◽  
Y. B. Chen
Keyword(s):  
Electrical Resistivity ◽  
Thermoelectric Power ◽  
Raman Spectra ◽  
Power Factor ◽  
Low Temperatures ◽  
X Ray Diffraction ◽  
Thermoelectric Power Factor ◽  
X Ray ◽  
Large Enhancement ◽  
Diffraction Patterns

In this paper, we report a large enhancement in the thermoelectric power factor in CrSi2 film via Si:B (1 at.% B content) addition. The Si:B-enriched CrSi2 films are prepared by co-sputtering CrSi2 and heavily B-doped Si targets. Both X-ray diffraction patterns and Raman spectra confirm the formation of the crystalline phase CrSi2. Raman spectra also indicate the crystallization of the added Si:B. With the addition of Si:B, the electrical resistivity [Formula: see text] decreases especially at low temperatures while the Seebeck coefficient [Formula: see text] increases above 533 K. As a result, the thermoelectric power factor, [Formula: see text], is greatly enhanced and can reach [Formula: see text] at 583 K, which is much larger than that of the pure CrSi2 film.

Carrier dilution in TiSe2 based intergrowth compounds for enhanced thermoelectric performance

2015 ◽  
Vol 3 (40) ◽  
pp. 10451-10458 ◽  
Author(s):  
S. R. Bauers ◽  
D. R. Merrill ◽  
D. B. Moore ◽  
D. C. Johnson
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Thermoelectric Performance ◽  
Thermoelectric Power Factor

Synthesis and electrical properties of kinetically stabilized (PbSe)1+δ(TiSe2)n thin-film intergrowths are reported for 1 ≤ n ≤ 18. The carriers donated to the TiSe2 from PbSe are diluted with increasing n, leading to a systematic increase in the Seebeck coefficient and thermoelectric power factor.

Study of Electrical and Thermoelectrical Properties of One Strand DNA Chain for Nanoscale Thermoelectric Applications

2021 ◽  
Vol 19 (8) ◽  
pp. 70-76
Author(s):  
Shakir A.A. AL-Saidi ◽  
Alaa Ayad K. Al-mebir ◽  
J.M. Al-Mukh
Keyword(s):  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Dna Sequences ◽  
Transmission Probability ◽  
Dna Molecules ◽  
Thermoelectric Devices ◽  
Thermoelectric Power Factor ◽  
Dna Chain ◽  
Energy Dependent

The concept of using DNA molecules for designing nano-scale electronic systems has attracted researcher’s attention due to the unique properties of DNA, such as self-assembly and self-recognition. Thus, increased number of studies, theoretically and experimentally, have been carried out to study the possibility of adopting DNA molecules in designing nanoscale thermoelectric devices. In this work, a general expression of the electron transmission probability that describes the electron transfer through one strand DNA chain has been derived using the steady-state-formalism by assuming one strand of DNA molecules as line model. The energy-dependent transmission was studied, then energy-and temperature-dependent Seebeck coefficient, and thermoelectric characteristics of four one strand DNA sequences: (A-A)10, (C-C)10, (G-G)10 and (T-T)10 are theoretically studied. According to the obtained results, it is found that the transmission behavior (magnitude and position) is varying with the type of DNA sequence. Also, the energy dependent Seebeck coefficient (S-E) curves clearly show a nonlinear energy-dependence, while the relationship between Seebeck coefficient and temperature (S-T) is linear. Thermoelectric power factor as a function of temperature was found to be enhanced with the temperature increment for the four types of DNA nucleobases. The highest values of thermoelectric power factor belong to thymine (120Wm-1K-2) and cytosine (60 Wm-1K-2), that nominate them as outstanding candidate thermoelectric materials to be adopted in the fabrication of one strand DNA-base nanoscale thermoelectric devices.

Thermoelectric polymer films with a significantly high Seebeck coefficient and thermoelectric power factor obtained through surface energy filtering

2020 ◽  
Vol 8 (27) ◽  
pp. 13600-13609 ◽  
Author(s):  
Xin Guan ◽  
Erol Yildirim ◽  
Zeng Fan ◽  
Wanheng Lu ◽  
Bichen Li ◽  
...  
Keyword(s):  
Surface Energy ◽  
Seebeck Coefficient ◽  
Thermoelectric Power ◽  
Power Factor ◽  
Polymer Films ◽  
Thermoelectric Power Factor ◽  
Energy Filtering ◽  
High Seebeck Coefficient ◽  
Rhodamine 101

Coating with Rhodamine 101 can significantly enhance the Seebeck coefficient of PEDOT:PSS, and surface energy filtering is proposed to be the reason for this effect.

Effects of Oxygen-Reduction on Thermoelectric Properties of Sr0.61Ba0.39Nb2O6 Ceramics

2014 ◽  
Vol 787 ◽  
pp. 210-214 ◽  
Author(s):  
Yi Li ◽  
Jian Liu ◽  
Chun Lei Wang ◽  
Wen Bin Su ◽  
Yuan Hu Zhu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Oxygen Reduction ◽  
Thermoelectric Power ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Thermoelectric Power Factor

The thermoelectric properties of Sr0.61Ba0.39Nb2O6 ceramics, reduced in various conditions, were investigated in the temperature range from 323K to 1073K. Both the electrical resistivity and the absolute Seebeck coefficient decreased with the deepening degree of oxygen-reduction. However, the decrease of the electrical resistivity had a major influence on the thermoelectric power factor. Therefore, the more heavily reduced sample can gain the higher value of thermoelectric power factor. It has been observed that the thermal conductivity increased with the deepening degree of oxygen-reduction, which indicates that the scattering of the oxygen vacancies produced by reduction does not play a dominant role in the thermal conduction. In spite of the increase of the thermal conductivity, the oxygen-reduction still promoted the thermoelectric figure of merit via the increase of the thermoelectric power factor. And the most heavily reduced Sr0.61Ba0.39Nb2O6 ceramic has the highest thermoelectric figure of merit (~0.18 at 1073 K) among all the samples.

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