Mathematical models for phase transitions in biogels

2019 ◽  
Vol 33 (09) ◽  
pp. 1950111 ◽  
Author(s):  
Ayse Humeyra Bilge ◽  
Arif Selcuk Ogrenci ◽  
Onder Pekcan

It has been shown that reversible and irreversible phase transitions of biogels can be represented by epidemic models. The irreversible chemical sol–gel transitions are modeled by the Susceptible-Exposed-Infected-Removed (SEIR) or Susceptible-Infected-Removed (SIR) epidemic systems whereas reversible physical gels are modeled by a modification of the Susceptible-Infected-Susceptible (SIS) system. Measured sol–gel and gel–sol transition data have been fitted to the solutions of the epidemic models, either by solving the differential equations directly (SIR and SEIR models) or by nonlinear regression (SIS model). The gel point is represented as the “critical point of sigmoid,” defined as the limit point of the locations of the extreme values of its derivatives. Then, the parameters of the sigmoidal curve representing the gelation process are used to predict the gel point and its relative position with respect to the transition point, that is, the maximum of the first derivative with respect to time. For chemical gels, the gel point is always located before the maximum of the first derivative and moves backward in time as the strength of the activation increases. For physical gels, the critical point for the sol–gel transition occurs before the maximum of the first derivative with respect to time, that is, it is located at the right of this maximum with respect to temperature. For gel–sol transitions, the critical point is close to the transition point; the critical point occurs after the maximum of the first derivative for low concentrations whereas the critical point occurs after the maximum of the first derivative for higher concentrations.

2019 ◽  
Vol 16 (4) ◽  
pp. 1992-2022 ◽  
Author(s):  
J. Amador ◽  
◽  
D. Armesto ◽  
A. Gómez-Corral ◽  
◽  
...  

Author(s):  
T. M. Correia ◽  
Q. Zhang

Full-perovskite Pb 0.87 Ba 0.1 La 0.02 (Zr 0.6 Sn 0.33 Ti 0.07 )O 3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant ( ε m ) and the corresponding temperature ( T m ) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with ε m reaching a minimum at 400 nm and T m shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric ( E AFE−FE ) and ferroelectric–antiferroelectric ( E FE−AFE ) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’.


1999 ◽  
Vol 55 (4) ◽  
pp. 484-493 ◽  
Author(s):  
Lidunka Vočadlo ◽  
Geoffrey D. Price ◽  
I. G. Wood

An investigation of the relative stability of the FeSi structure and of some hypothetical polymorphs of FeSi has been made by first-principles pseudopotential calculations. It has been shown that the observed distortion from ideal sevenfold coordination is essential in stabilizing the FeSi structure relative to one of the CsCl type. Application of high pressure to FeSi is predicted to produce a structure having nearly perfect sevenfold coordination. However, it appears that FeSi having a CsCl-type structure will be the thermodynamically most stable phase for pressures greater than 13 GPa. Fitting of the calculated internal energy vs volume for the FeSi structure to a third-order Birch–Murnaghan equation of state led to values, at T = 0 K, for the bulk modulus, K 0, and for its first derivative with respect to pressure, K 0′, of 227 GPa and 3.9, respectively.


Author(s):  
Muzamil Shah

Abstract Topological photonics is an emerging field in photonics in which various topological and geometrical ideas are used to manipulate and control the behavior of light photons. The interplay between topological matter and the spin degree of freedom of photons provides new opportunities for achieving spin-based photonics applications. In this paper, the photonic spin Hall effect (PSHE) of reflected light from the surface of the topological silicene quantum systems subjected to external electric and radiation fields in the terahertz regime is theoretically investigated. By tuning the external electric and the applied laser fields, we can drive the silicenic system through different topological quantum phase transitions. We demonstrate that the in-plane and transverse spatial spin dependent shifts exhibit extreme values near Brewster’s angles and away from the optical transition frequencies. We reveal that the photonic spin Hall shifts are sensitive to the spin and valley indices as well as to the number of closed gaps. By incorporating the quantum weak value measurement techniques, the photonic spin Hall effect greatly impact the research in spinoptics, spintronics, and valleytronics.


1990 ◽  
Vol 05 (03) ◽  
pp. 515-530
Author(s):  
YOSHITOMI MORIKAWA

We apply the microcanonical simulation method with friction terms to deduce the order of phase transitions by examining the existence of the S-shaped curve in the internal energy-temperature diagram. We study the dependence of the S-shape on a parameter of energy change by using a gauge model, and determine the location of the transition point. We further consider the possibility of finding out weak first-order phase transitions. We also explain several features in the method and remark a condition on the parameter for a reasonable simulation.


1994 ◽  
Vol 346 ◽  
Author(s):  
R. P. S. M. Lobo ◽  
R. L. Moreira ◽  
N. D. S. Mohallem

ABSTRACTBarium titanate ceramics have been obtained by sol-gel methods. The dielectric investigations of these materials revealed the existence of diffuse ferroelectric transitions. By using a phenomenological model, we could demonstrate the existence of a simple relationship between the diffuse character of the transition and the sample grain-size. This effect has been attributed to interactions between charged defects on the grain surfaces and the spontaneous polarization of the material.


2018 ◽  
Vol 233 ◽  
pp. 146-148 ◽  
Author(s):  
R. Peña-Garcia ◽  
Y. Guerra ◽  
B.V.M. Farias ◽  
D. Martínez Buitrago ◽  
A. Franco ◽  
...  

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