Simultaneous effects of pressure and temperature on excitons in Pöschl–Teller quantum well

2017 ◽  
Vol 31 (08) ◽  
pp. 1750050 ◽  
Author(s):  
A. Anitha ◽  
M. Arulmozhi
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Heavy Hole ◽  
Light Hole ◽  
Binding Energies ◽  
Exciton Binding Energy ◽  
Effective Mass Approximation ◽  
Mass Approximation ◽  
Asymmetric Configuration

Binding energies of the heavy hole and light hole exciton in a quantum well with Pöschl–Teller (PT) potential composed of GaAs have been studied variationally within effective mass approximation. The effects of pressure and temperature on exciton binding energy are analyzed individually and also simultaneously for symmetric and asymmetric configuration of the well. The results show that exciton binding energy (i) decreases as the well width increases, (ii) increases with pressure and (iii) decreases with temperature. Simultaneous effects of these perturbations lead to more binding of the exciton. The results are compared with the existing literature.

Optical determination of the heavy‐hole effective mass and exciton binding energy for a Si0.83Ge0.17/Si quantum well

1995 ◽  
Vol 78 (10) ◽  
pp. 6327-6329 ◽  
Author(s):  
Hosun Lee ◽  
E. D. Jones ◽  
S. R. Kurtz ◽  
T. Schmiedel ◽  
D. C. Houghton ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Heavy Hole ◽  
Exciton Binding Energy ◽  
Hole Effective Mass ◽  
Optical Determination

THE EFFECTS OF TEMPERATURE AND HYDROSTATIC PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF A DONOR IN A QUANTUM WELL

2011 ◽  
Vol 18 (05) ◽  
pp. 147-152 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Diamagnetic Susceptibility ◽  
Effective Mass Approximation ◽  
Mass Approximation ◽  
Hydrogenic Donor ◽  
Different Temperatures ◽  
Effects Of Temperature

Using the effective-mass approximation within a variational scheme, we have calculated the diamagnetic susceptibility and binding energy of a hydrogenic donor in a quantum well under different temperatures and hydrostatic pressure conditions. Our calculation have revealed the dependence of the diamagnetic susceptibility and the impurity binding on temperature and hydrostatic pressure.

Fractal dimension method for exciton in cylindrical GaAs/AlxGa1−xAs core-shell-cap nanowires

2017 ◽  
Vol 31 (28) ◽  
pp. 1750209 ◽  
Author(s):  
Hui Sun ◽  
Zhenhua Wu ◽  
Qiang Tian
Keyword(s):  
Fractal Dimension ◽  
Binding Energy ◽  
Heavy Hole ◽  
Light Hole ◽  
Binding Energies ◽  
Exciton Binding Energy ◽  
Aluminum Concentration ◽  
Core Shell ◽  
Core Radius ◽  
Shell Width

By use of the fractal dimension method, the binding energies of heavy-hole exciton and light-hole exciton in cylindrical GaAs/Al[Formula: see text]Ga[Formula: see text]As core-shell-cap nanowire are explored. In this study, the exciton is confined in GaAs shell of the GaAs/Al[Formula: see text]Ga[Formula: see text]As core-shell-cap nanowire for a given aluminum concentration of [Formula: see text][Formula: see text]=[Formula: see text]0.3. The numerical results of heavy-hole exciton binding energy, light-hole exciton binding energy and fractal dimension parameter are worked out as functions of shell width and core radius. It has been shown by the calculated results that heavy-hole exciton binding energy and light-hole exciton binding energy firstly increase and then decrease as the shell width increases. When the core radius increases, both the heavy-hole exciton binding energy and light-hole exciton binding energy increase gradually. Exciton problems in GaAs shell of the cylindrical GaAs/Al[Formula: see text]Ga[Formula: see text]As core-shell-cap nanowire are solved in a simple manner to avoid complex and lengthy calculations by using the fractal dimension method.

OPTICAL INTERSUBBAND TRANSITIONS AND BINDING ENERGIES OF DONOR IMPURITIES IN Ga1-xInxNyAs1-y/GaAs/Al0.3Ga0.7As QUANTUM WELL UNDER THE ELECTRIC FIELD

2012 ◽  
Vol 26 (06) ◽  
pp. 1250013 ◽  
Author(s):  
F. UNGAN ◽  
U. YESILGUL ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SOKMEN
Keyword(s):  
Binding Energy ◽  
Optical Absorption ◽  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Shallow Donor ◽  
Binding Energies ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Intersubband Optical Absorption

The effects of nitrogen and indium mole concentration on the intersubband optical absorption for (1–2) transition and the binding energy of the shallow-donor impurities in a Ga 1-x In x N y As 1-y/ GaAs / Al 0.3 Ga 0.7 As quantum well under the electric field is theoretically calculated within the framework of the effective-mass approximation. Results are obtained for several concentrations of nitrogen and indium, and the applied electric field. The numerical results show that the intersubband transitions and the impurity binding energy strongly depend on the nitrogen and indium concentrations.

Infrared transitions between hydrogenic states in GaInNAs/GaAs quantum wells

2016 ◽  
Vol 30 (22) ◽  
pp. 1650139
Author(s):  
E. B. Al ◽  
F. Ungan ◽  
U. Yesilgul ◽  
E. Kasapoglu ◽  
H. Sari ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Effective Mass ◽  
Variational Approach ◽  
Nitrogen Concentration ◽  
Effective Mass Approximation ◽  
Donor Impurity ◽  
Transition Energies ◽  
Mass Approximation ◽  
Single Formula

The effects of nitrogen and indium concentrations on the [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]-like donor impurity energy states in a single [Formula: see text] quantum well (QW) are investigated by variational approach within the effective mass approximation. The results are presented as a function of the well width and the donor impurity position. It is found that the impurity binding and transition energies depend strongly on the indium concentration while depends weakly on the nitrogen concentration.

Luminescence Studies of MBE Grown SI/SIGE Quantum Wells

1993 ◽  
Vol 298 ◽  
Author(s):  
M. Gail ◽  
J. Brunner ◽  
U. Menczigar ◽  
A. Zrenner ◽  
G. Abstreiter
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Elevated Temperatures ◽  
Variational Calculation ◽  
Exciton Binding Energy ◽  
Quantum Well Structures ◽  
Mass Approximation ◽  
Wide Range ◽  
Good Agreement

AbstractWe report on detailed luminescence studies of MBE grown Si/Si1-xGex quantum well structures. Both well width and composition is varied over a wide range. Bandgap photoluminescence is observed for all samples grown at elevated temperatures. The measured bandgap energies are in good agreement with subband calculations based on effective mass approximation and taking into account the segregation of Ge atoms during growth. Diffusion is found to limit quantum well (QW) growth with Ge-contents above 35% at high temperatures. The photoluminescence signals are detected up to about 100K and can be attributed to interband transitions of free excitons. We also present investigations of the exciton binding energy as a function of well width and composition. The observed shift of the exciton binding energy is compared with results of a variational calculation. A distinct onset in photocurrent and electroluminescence up to 200 K are observed in quantum well diodes.

LASER INDUCED SEMICONDUCTOR–METAL TRANSITION IN A SEMIMAGNETIC QUANTUM WELL

2011 ◽  
Vol 10 (04n05) ◽  
pp. 611-615 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Magnetic Field ◽  
Variational Principle ◽  
Quantum Well ◽  
Effective Mass ◽  
Conduction Band ◽  
Effective Mass Approximation ◽  
Mass Approximation

The effect of laser and magnetic field on the semiconductor–metal transition in a Cd 1-x2 Mn x2 Te / Cd 1-x1 Mn x1 Te / Cd 1-x2 Mn x2 Te quantum well has been investigated using variational principle in effective mass approximation for smaller Mn composition. The effect of non parabolicity of the conduction band has been included in our calculation. The results are presented and discussed.

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