CRITICAL SURFACE TENSION, CRITICAL SURFACE ENERGY AND PARACHOR OF MnSO3 THIN FILM

2016 ◽  
Vol 23 (03) ◽  
pp. 1650009 ◽  
Author(s):  
İ. A. KARIPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Tension ◽  
Grain Size ◽  
Surface Energy ◽  
Film Thickness ◽  
Critical Surface ◽  
Critical Surface Tension ◽  
Average Grain Size ◽  
The Relationship

This study examines the critical surface energy of manganese sulfite (MnSO[Formula: see text] crystalline thin film, produced via chemical bath deposition (CBD) on substrates. In addition, parachor, which is an important parameter of chemical physics, and its relationship with grain size, film thickness, etc., has been investigated for thin films. For this purpose, MnSO3 thin films were deposited at room temperature using different deposition times. Structural properties of the films, such as film thickness and average grain size, were examined using X-ray diffraction; film thickness and surface properties were measured by and atomic force microscope; and critical surface tension of MnSO3 thin films was measured with Optical Tensiometer and calculated using Zisman method. The results showed that critical surface tension and parachor of the films have varied with average grain size and film thickness. Critical surface tension was calculated as 32.97, 24.55, 21.03 and 12.76[Formula: see text]mN/m for 14.66, 30.84, 37.07 and 44.56[Formula: see text]nm grain sizes, respectively. Film thickness and average grain size have been increased with the deposition time and they were found to be negatively correlated with surface tension and parachor. The relationship between film thickness and parachor was found as [Formula: see text] whereas the relationship between average grain size and parachor was found as [Formula: see text] We also showed the relationships between parachor and some thin films parameters.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Durability of Coatings Based on Sol Silicate Paint

2019 ◽  
Vol 394 ◽  
pp. 1-4
Author(s):  
Valentina Ivanovna Loganina ◽  
Yerkebulan Bisengalievich Mazhitov ◽  
Yuri Petrovich Skachkov
Keyword(s):  
Surface Tension ◽  
Surface Energy ◽  
Intermolecular Interaction ◽  
Frost Resistance ◽  
Hamaker Constant ◽  
Critical Surface ◽  
Freezing And Thawing ◽  
Critical Surface Tension

The results of the study provide information on the resistance of coatings based on the solof silicate paint in the process of freezing and thawing. It was found, that coatings based on sol silicatepaints are characterized by a higher resistance compared of silicate coatings. It is shown, that thecoatings withstood 50 cycles of alternate freezing and thawing. The surface energy of the coatingswas calculated using the critical surface tension of the fluid at the interface with the solid. Thedispersion contribution in the intermolecular interaction between the particles of the coatings wasestimated. The values of the surface tension of the coatings and the values of the dispersioncomponent of the surface energy of the coatings — the complex Hamaker constant — are calculated.It was revealed, that after testing a decrease in the values of the Hamaker constant is observed. It wasestablished, that after testing for frost resistance, the values of the Hamaker constant for coatingsbased on sol of silicate paint are higher compared to coatings based on silicate paint.

Abnormal Grain Growth in Ultra-Thin Films of Germanium on Insulator

1983 ◽  
Vol 25 ◽  
Author(s):  
T. Yonehara ◽  
C.V. Tihompson ◽  
Henry I. Smith
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solid State ◽  
Surface Energy ◽  
Film Thickness ◽  
Driving Force ◽  
Surface Relief ◽  
Relief Structure ◽  
Surface Energy Anisotropy ◽  
Energy Anisotropy

ABSTRACTThe growth of large secondary grains with (112) texture, and solid-state agglomeration to single-crystal islands have been observed by annealing ultra-thin (less than 1000Å) films of Ge. A driving force proportional to surface-energy anisotropy and inversely proportional to film thickness is believed to be responsible for both phenomena. The temperature for agglomeration decreases with film thickness, and is further depressed by the presence of Sn vapor. Patterning Ge into stripes increases secondary grain size and population. Encapsulation with a film of SiO2 suppresses agglomeration and alters crystallographic texture. A surface-relief structure of 0.2μm period and 300Å depth induces a (100) texture in some cases, and alters the morphology of agglomerated islands.

Crystal Quality Improvement of CuInS2 Thin Film by Two Step Fabrication Method with Bismuth Addition

2013 ◽  
Vol 372 ◽  
pp. 563-566
Author(s):  
Shohei Fukamizu ◽  
Daisuke Hironiwa ◽  
Takashi Minemoto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Crystal Growth ◽  
Film Thickness ◽  
High Efficiency ◽  
Growth Promotion ◽  
Crystal Quality ◽  
Chemical Doping ◽  
Bi Doping

CuInS2 (CIS) is the promising candidate of an absorber layer of high efficiency thin film solar cells. The crystal quality of CIS is one of the important factors for high efficiency. A chemical doping approach using antimony and bismuth (Bi) is well known for improving crystal quality in Cu (In,Ga)Se2 thin films. In this study, the effect of Bi doping on evaporated CIS thin films was investigated. A CIS thin film without Bi doping annealed at 600°C showed small crystal grain size of ~1 μm, which was smaller than the CIS film thickness of 2 μm. The small addition of 50 nm-thick Bi promoted crystal growth and large grain size of greater than 1 μm, which was comparable to the CIS film thickness, was realized. The CIS films without and with Bi addition had surface precipitates identified as Cu-S and Cu-Bi-S compounds, respectively. The crystal growth promotion by Bi addition can be attributed to that the Cu-Bi-S compound which has lower melting point of 470~490°C than that of the Cu-S compound of 507°C acted as flux for crystal growth.

scholarly journals Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application

2021 ◽  
Vol 67 (2 Mar-Apr) ◽  
pp. 263
Author(s):  
T. O. Daniel ◽  
U. E. Uno ◽  
K. U. Isah ◽  
U. Ahmadu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Grain Boundary ◽  
Film Thickness ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-ray spectroscopy and hall measurement were used to characterise the composition, microstructure and electrical properties of the SnS thin film.  SnS thin films were found to consist of Sn and S elements whose composition varied with increase in thickness. The film conductivity was found to vary with grain size and grain boundary which is a function of the film thickness. The SnS film of 0.4 μm thickness shows optimal grain growth with a grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density which allows charge carriers to move freely in the lattice thereby causing a reduction in resistivity and increase in conductivity of the films which is essential in obtaining the threshold voltage for a transistor semiconductor channel layer operation. The carrier concentration of due to low resistivity of 3.612 ×105 Ωcm of 0.4 μm SnS thin film thickness is optimum and favours the attainment of the threshold voltage for a field effect transistor operation hence the application of SnS thin film as a semiconductor channel layer in a field effect transistor.

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