DEFECTS OF A15 SMALL PARTICLES IN TUNGSTEN THIN FILMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1191-1194 ◽  
Author(s):  
MASASHI ARITA ◽  
ISAO NISHIDA
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Crystal Defects ◽  
Type Structure ◽  
Special Structure ◽  
Small Particles ◽  
Structure Unit ◽  
Transmission Electron ◽  
Means Of Transmission

Crystal defects of A15 small particles in tungsten thin films were studied by means of transmission electron microscopy. Defects found in nanoscale crystals were analyzed to have special structure containing the Zr4Al3-type structure unit.

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

A novel mosaic-like structure in SrTiO3 thin films on a Pt(001) surface revealed by transmission electron microscopy

1996 ◽  
Vol 11 (11) ◽  
pp. 2777-2784 ◽  
Author(s):  
S. Takeno ◽  
S. Nakamura ◽  
K. Abe ◽  
S. Komatsu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution Imaging ◽  
Antiphase Boundaries ◽  
Growth Modes ◽  
Transmission Electron ◽  
Interfacial Structures ◽  
Resolution Imaging ◽  
Means Of Transmission

A novel mosaic-like structure in SrTiO3 thin films was discovered and characterized by means of transmission electron microscopy (TEM). The films were deposited on a (001) oriented Pt surface. The orientation relationship between SrTiO3 film and Pt substrate was determined, and four types of growth modes were revealed. These four growth modes formed four types of domains, respectively, and these domains and Pt formed peculiarly ordered interfacial structures, i.e., near coincidence site lattices. Antiphase boundaries between two adjacent domains were also observed by high-resolution imaging.

The identification of single-domain titanomagnetite particles by means of transmission electron microscopy

1979 ◽  
Vol 16 (2) ◽  
pp. 375-379 ◽  
Author(s):  
P. P. K. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Remanent Magnetization ◽  
Magnetic Domain ◽  
Natural Remanent Magnetization ◽  
Small Particles ◽  
Dispersed Particles ◽  
Transmission Electron ◽  
Mid Atlantic Ridge ◽  
Means Of Transmission

A basalt sample dredged from the axis of the Mid-Atlantic Ridge has been ion-thinned and examined by transmission electron microscopy. Finely dispersed particles as small as 0.04 μm in diameter, occurring in amorphous patches of the rock, have been identified as titanomagnetite by means of electron diffraction and microanalysis. These small particles have dimensions appropriate to single magnetic domain behaviour, and are considered to be largely responsible for the strong and very stable natural remanent magnetization of this rock.

Fracture processes in polystyrene

1975 ◽  
Vol 343 (1635) ◽  
pp. 525-535 ◽  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Fracture Surface ◽  
Fracture Process ◽  
Transmission Electron ◽  
Controlled Fracture ◽  
Means Of Transmission ◽  
Surface Morphologies ◽  
Fracture Processes

The model for the craze controlled fracture process in polystyrene has been developed further by taking into consideration the micromorphology of the crazes in which the nucleation and propagation of cracks occurs. The micromorphology of crazes formed in thin films of polystyrene, some of which had fractured, has been characterized by means of transmission electron microscopy. The observed micromorphological detail has been shown to be consistent with the micromorphology of the fracture surfaces of bulk specimens. In particular, the slow and fast regions of crack propagation which result in distinctly different fracture surface morphologies have been shown to be associated with differences in micromorphology which occur along the length of a craze.

Melt recrystallization behavior of carbon-coated melt-drawn oriented isotactic polypropylene thin films

2015 ◽  
Vol 6 (43) ◽  
pp. 7524-7532 ◽  
Author(s):  
Le Ma ◽  
Jie Zhang ◽  
Mushtaque A. Memon ◽  
Xiaoli Sun ◽  
Huihui Li ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Recrystallization Temperature ◽  
Melting Time ◽  
Recrystallization Behavior ◽  
Transmission Electron ◽  
Carbon Coated ◽  
Means Of Transmission ◽  
Temperature Melting

The melt recrystallization of vacuum carbon evaporated melt-drawn iPP thin films at varying melting temperature, melting time and recrystallization temperature was studied by means of transmission electron microscopy combined with electron diffraction.

Electron microscope observations of iron-catalyzed gasification of graphite

1978 ◽  
Vol 36 (1) ◽  
pp. 452-453
Author(s):  
A. Szirmae ◽  
V.U.S. Rao ◽  
R.M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Microscope ◽  
Single Crystal ◽  
Catalytic Effect ◽  
Vacuum Deposition ◽  
Gas Chromatograph ◽  
Small Particles ◽  
Transmission Electron

A well known catalytic effect of transition metals and particularly iron in contack with carbonaceous carbon exposed to oxidizing or hydrogenating atmospheres (02, CO-CO2, H2-H2O) has been investigated by scanning and high voltage transmission electron microscopy in a program aimed at determining the fundamental mechanisms of the gasification reactions. Samples of polycrystalline planchets and single crystal flakes of graphite were reacted at temperatures from 650°to 1100°C in “wet” and “dry” hydrogen . Quantitative electron microscope observations were supplemented by weight loss measurements and continuous gas chromatograph analysis of the CO and CH4, produced. Prior to exposure to the reacting gases, small particles of metallic iron are formed on the surface of single crystal graphite flakes or pressed carbon planchets by vacuum deposition of thin films ranging from 1 Å to 2000 Å in thickness.

TEM STUDY OF THE MICROSTRUCTURE AND INTERFACES IN YBa2Cu3Oy THIN FILMS GROWN ON SILICON WITH A Eu2CuO4/Y-ZrO2 BI-LAYER BUFFER

2007 ◽  
Vol 14 (04) ◽  
pp. 751-754
Author(s):  
J. GAO ◽  
E. G. FU ◽  
Z. LUO ◽  
Z. WANG ◽  
D. P. YU
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Oxide Layer ◽  
Intermediate Layer ◽  
Secondary Phases ◽  
Grown Layer ◽  
Initial Formation ◽  
Transmission Electron ◽  
Means Of Transmission

The microstructures in the YBa 2 Cu 3 O y films grown on Eu 2 CuO 4/ Y-ZrO 2(YSZ) buffered silicon were studied by means of transmission electron microscopy. Our effort was emphasized on the influence of the interfacial microstructures on the formation and epitaxy of the grown layer. It was found that a native Si -oxide layer ~ 5 nm was formed at the boundary between YSZ and silicon. Such an intermediate layer should be formed after the initial formation of the grown YSZ layer as the epitaxy of YSZ still remain. The epitaxy can be kept through all layers without the formation of big grain boundaries. No amorphous layers and secondary phases were observed at the interfaces of YSZ/ECO and YBCO/ECO. The results demonstrate that the crystallinity and the epitaxy of YBCO have been greatly improved by the bi-layer buffer.

Transmission Electron Microscopy Studies of Tin Oxide Thin Films Grown on the Sapphire Substrate

1998 ◽  
Vol 4 (S2) ◽  
pp. 622-623
Author(s):  
L. Fu ◽  
X. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Sapphire Substrate ◽  
Tin Oxide ◽  
Tin Dioxide ◽  
High Ratio ◽  
Crystal Defects ◽  
Oxide Thin Films ◽  
Transmission Electron

Tin dioxide (SnO2) with rutile type structure exhibits unique electronic and optical properties. In applications of this material as gas sensors, a film-type of SnO2 provides high ratio of surface area to volume and lead to high sensitivity and fast responses. It has been found that substrate material, deposition conditions, and annealing procedure may directly control the microstructure of thin films, hence control gas-sensing properties. In this paper, we present transmission electron microscopy (TEM) studies of the microstructure and crystal defects of tin oxide thin films on sapphire substrate with subsequent annealing at high temperatures.Tin oxide thin films were deposited on the surface of sapphire by e-beam evaporation of high purity SnO2 (99.999%) at 350°C followed by annealing in air at 600°C - 700°C. Microstructures of the films were characterized by X-ray diffraction (XRD) and TEM techniques.

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