Influence of piezoelectricity, doping and magnetostatic field on Brillouin amplification in compound (AIIIBV and AIIBVI) semiconductors

2021 ◽  
Author(s):  
Arun Kumar ◽  
Sunita Dahiya ◽  
Navneet Singh ◽  
Manjeet Singh
Keyword(s):  
Numerical Analysis ◽  
Doping Concentration ◽  
Amplification Coefficient ◽  
Threshold Condition ◽  
Transmitted Intensity ◽  
Theoretical Formulation ◽  
Magnetostatic Field ◽  
Compound A ◽  
Cell Efficiency ◽  
Lower Excitation

A theoretical formulation followed by numerical analysis describing Brillouin amplification in compound (AIIIBV and AIIBVI) semiconductors is explored. The threshold condition for the onset of Brillouin amplification is determined. Well above the threshold intensity, the influence of piezoelectricity, doping concentration, and external magnetostatic field on the parameters characterizing Brillouin amplification viz. Brillouin amplification coefficient, transmitted intensity of Brillouin-scattered Stokes mode (BSSM), and Brillouin cell efficiency of the Brillouin cell isestimated. Numerical analysis is made for three different Brillouin cells consisting of [Formula: see text]-InSb, [Formula: see text]-GaAs, and [Formula: see text]-CdS, at 77[Formula: see text]K duly irradiated by a pulsed CO2 laser. Efforts are directed towards to determine appropriate values of doping concentration and magnetostatic field to enhance the parameters characterizing Brillouin amplification, at lower excitation intensity, and to establish the suitability of compound semiconductors as hosts for fabrication of efficient Brillouin amplifiers.

Theoretical and numerical analysis of acoustic emission guided waves released during crack propagation

2018 ◽  
Vol 30 (9) ◽  
pp. 1318-1338 ◽  
Author(s):  
Mohammad Faisal Haider ◽  
Victor Giurgiutiu
Keyword(s):  
Acoustic Emission ◽  
Numerical Analysis ◽  
Plate Thickness ◽  
Signal Amplitude ◽  
Guided Wave ◽  
Peak Amplitude ◽  
Peak Time ◽  
Source Depth ◽  
Theoretical Formulation ◽  
Theoretical And Numerical Analysis

This article presents a theoretical and numerical analysis of guided wave released during an acoustic emission event using excitation potentials. Theoretical formulation showed that guided wave generated using excitation potentials follows the Rayleigh–Lamb equation. The numerical studies predict the out-of-plane displacement of acoustic emission guided wave on the plate surface at some distance away from the source. Parameter studies were performed to evaluate the effect of (1) pressure and shear potentials acting alone and in combination, (2) plate thickness, (3) source depth, (4) rise time, and (5) propagating distance away from the source. Numerical results showed that peak amplitude of S0 signal increases with increasing plate thickness, whereas the peak amplitude of A0 signal initially decreases and then increases with increasing plate thickness. Regarding the source depth, it was found that peak amplitude of S0 signal decreases and A0 signal increases with increasing source depth. Peak time showed a notable contribution to the low-frequency component of A0 signal. There were large losses in S0 and A0 peak signal amplitude over the propagation distance from 100 to 500 mm.

Isothermal Elastohydrodynamic Lubrication of Point Contacts: Part 1—Theoretical Formulation

1976 ◽  
Vol 98 (2) ◽  
pp. 223-228 ◽  
Author(s):  
B. J. Hamrock ◽  
D. Dowson
Keyword(s):  
Numerical Analysis ◽  
Entire Range ◽  
Reynolds Equation ◽  
Point Contact ◽  
Elastohydrodynamic Lubrication ◽  
Uniform Pressure ◽  
Point Contacts ◽  
Elasticity Analysis ◽  
Simultaneous Solution ◽  
Theoretical Formulation

The analysis of an isothermal elastohydrodynamic lubrication (EHL) point contact was evaluated numerically. This required the simultaneous solution of the elasticity and Reynolds equations. In the elasticity analysis the contact zone is divided into equal rectangular areas and it is assumed that a uniform pressure is applied over each element. In the numerical analysis of the Reynolds’ equation a phi analysis where phi is equal to the pressure times the film thickness to the 3/2 power is used to help the relaxation process. The EHL point contact analysis is applicable for the entire range of elliptical parameters and is valid for any combination of rolling and sliding within the contact.

Modeling the Effect of ARC and other Parameters on the Efficiency of GaAs Solar Cell Using Silvaco

2015 ◽  
Vol 819 ◽  
pp. 204-208
Author(s):  
Lim Kean Sai ◽  
Rozana A.M. Osman ◽  
M.S. Idris
Keyword(s):  
Solar Cell ◽  
Doping Concentration ◽  
Single Layer ◽  
Small Variation ◽  
Substrate Thickness ◽  
Solar Cell Efficiency ◽  
Reflective Coating ◽  
Cell Efficiency ◽  
Parabolic Shape ◽  
P Type

Gallium Arsenide (GaAs) based solar cell which have nearly ideal direct bandgap of 1.43eV hold the highest single junction solar cell efficiency. GaAs solar cell without Anti-Reflective Coating (ARC) layer was studied and shows the efficiency ranges between 8% to 15%, followed by GaAs solar cell with efficiency ranges between 20% to 25% with ARC layer. The substrate thickness for both GaAs solar cell was varied from 0.1μm to 1.0μm. Increased of P-type substrate thickness shows a small variation in efficiency with parabolic shape, while increased of N-type substrate thicknesss increased the efficiency between 21% to 25% for single layer GaAs with ARC thickness. Besides that, increased of P-type doping concentration from 1×1018cm-3 to 1×1019cm-3 and fixed N-type doping will decreased the efficiency. However increased the N-type doping concentration from 1×1017cm-3 to 1×1018cm-3 and fixed the P-type doping will increased the efficiency. The thickness of ARC layer on GaAs solar cell was studied and shows that highest efficiency achieved at narrow thickness of ARC.

scholarly journals The Compromise Condition for High Performance of the Single Silicon Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-6
Author(s):  
Youngseok Lee ◽  
Vinh Ai Dao ◽  
Sangho Kim ◽  
Sunbo Kim ◽  
Hyeongsik Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gas Phase ◽  
Light Absorption ◽  
Doping Concentration ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Localized States ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
Cell Efficiency

For optimum performance of the hydrogenated amorphous silicon/crystalline silicon (a-Si : H/c-Si) heterojunction solar cells, featuring a doping concentration, localized states, as well as thickness of emitter layer are crucial, since Fermi level, surface passivated quality, and light absorption have to be compromised themselves. For this purpose, the effect of both doping concentration and thickness of emitter layer was investigated. It was found that with gas phase doping concentration and emitter layer thickness of 3% and 7 nm, solar cell efficiency in excess of 14.6% can be achieved. For high gas phase doping concentration, the degradation of open-circuit voltage as well as cell efficiency was obtained due to the higher disorder in the emitter layer. The heavily doped along with thicker in thickness of emitter layer results in light absorption on short wavelength, then diminishing short-circuit current density.

scholarly journals Optimization of Mono-Crystalline Silicon Solar Cell Devices Using PC1D Simulation

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4986
Author(s):  
Gokul Sidarth Thirunavukkarasu ◽  
Mehdi Seyedmahmoudian ◽  
Jaideep Chandran ◽  
Alex Stojcevski ◽  
Maruthamuthu Subramanian ◽  
...  
Keyword(s):  
Solar Cell ◽  
Doping Concentration ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Surface Field ◽  
Recombination Velocity ◽  
Pc1d Simulation

Expeditious urbanization and rapid industrialization have significantly influenced the rise of energy demand globally in the past two decades. Solar energy is considered a vital energy source that addresses this demand in a cost-effective and environmentally friendly manner. Improving solar cell efficiency is considered a prerequisite to reinforcing silicon solar cells’ growth in the energy market. In this study, the influence of various parameters like the thickness of the absorber or wafer, doping concentration, bulk resistivity, lifetime, and doping levels of the emitter and back surface field, along with the surface recombination velocity (front and back) on solar cell efficiency was investigated using PC1D simulation software. Inferences from the results indicated that the bulk resistivity of 1 Ω·cm; bulk lifetime of 2 ms; emitter (n+) doping concentration of 1×1020 cm−3 and shallow back surface field doping concentration of 1×1018 cm−3; surface recombination velocity maintained in the range of 102 and 103 cm/s obtained a solar cell efficiency of 19%. The Simulation study presented in this article allows faster, simpler, and easier impact analysis of the design considerations on the Si solar cell wafer fabrications with increased performance.

scholarly journals Numerical Analysis of SnO2/Zn2SnO4/n-CdS/p-CdTe Solar Cell Using the SCAPS-1D Simulation Software

2021 ◽  
pp. 505-516
Author(s):  
Raad A. Rassol ◽  
Rasha F. Hasan ◽  
Sameer M. Ahmed
Keyword(s):  
Solar Cell ◽  
Numerical Analysis ◽  
Forward Bias ◽  
Simulation Software ◽  
Window Layer ◽  
Insulating Layer ◽  
Cell Parameters ◽  
Cell Efficiency ◽  
Lower Charge ◽  
Absorbent Layer

This research includes the use of CdTe in the design of a solar cell. The SCAPS-1D computer program was used to simulate thin cell capacity of CdTe/CdS by numerical analysis with the addition of a buffer layer (Zn2SnO4) to enhance cell efficiency. The thickness of the window layer (n-CdS) was reduced to 25nm with the inclusion of an insulating layer of 50 nm thickness to prevent leakage towards the forward bias with respect to the lower charge carriers. As for the absorber layer thickness (p-CdTe), it varied between 0.5µm and 6µm. The preferable thickness in the absorbent layer was 1.5µm. Different operating temperatures (298K-388K) were used, while the highest conversion efficiency (η=18.43%) was obtained with the rest of the solar cell parameters (Voc=0.967 V,  Jsc= 26.66 mA/cm2, FF=71.40%).

Study on the Vertical Acceleration Effect on Slope Stability

2015 ◽  
Vol 744-746 ◽  
pp. 632-640
Author(s):  
Hong Gang Wu ◽  
Tao Yang ◽  
Zhi Wen Xue ◽  
Hui Min Ma ◽  
Hong Li Zhang ◽  
...  
Keyword(s):  
Numerical Analysis ◽  
Dynamic Response ◽  
Near Field ◽  
Seismic Stability ◽  
Amplification Coefficient ◽  
Vertical Acceleration ◽  
Analysis Method ◽  
Response Characteristics ◽  
Dynamic Response Characteristics ◽  
Peak Value

It is found from the earthquake statistics in recent decades that the vertical seismic oscillation of near field was strong. And even the recorded peak value of vertical seismic oscillation was far more than the peak value of horizontal seismic oscillation in some sites. In order to study the characteristics of vertical and horizontal seismic oscillation acceleration acted on the slope. Calculate the slope earthquake dynamic response characteristics under the horizontal and vertical seismic acceleration by the FLAC3D numerical analysis method. Compared the acceleration, velocity and the displacement amplification coefficient under two kinds of excitation. Analyzed the influence on seismic stability by the acceleration of different direction.

scholarly journals The numerical analysis of ZnO nanoparticle based down-converting layer’s influence on solar cell efficiency

2019 ◽  
Author(s):  
Katarzyna Znajdek ◽  
Natalia Szczecińska ◽  
Aleksandra Sosna-Głębska ◽  
Przemysław Czarnecki ◽  
Maciej Sibiński
Keyword(s):  
Solar Cell ◽  
Numerical Analysis ◽  
Zno Nanoparticle ◽  
Solar Cell Efficiency ◽  
Cell Efficiency
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