LOW FREQUENCY NOISE CONVERSION IN FETS UNDER NONLINEAR OPERATION
2001 ◽
Vol 01
(03)
◽
pp. L189-L195
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Keyword(s):
The conversion mechanisms of microscopic low frequency noise sources (e.g. generation-recombination noise sources) located in the channel of a FET (Field Effect Transistor), in the presence of a large RF signal, are investigated. It is shown that the base-band (low frequency) input gate noise voltage spectral density is strongly dependent on the magnitude of the input RF power applied to the FET. Moreover, the microscopic generation-recombination noise sources distributed along the channel are also responsible of up-converted input gate noise voltage spectral density around the RF frequency.
2013 ◽
Vol 740-742
◽
pp. 934-937
1999 ◽
2005 ◽
Vol 16
(1)
◽
pp. 4-12
◽
Keyword(s):
2013 ◽
Vol 854
◽
pp. 21-27
◽
Keyword(s):
Keyword(s):
2011 ◽
Vol 324
◽
pp. 441-444
◽
Keyword(s):
2005 ◽
Vol 24
(2)
◽
pp. 97-105
◽
Keyword(s):