Low Frequency Noise Analysis in Advanced CMOS Devices

2011 ◽  
Vol 324 ◽  
pp. 441-444 ◽  
Author(s):  
Jalal Jomaah ◽  
Majida Fadlallah ◽  
Gerard Ghibaudo
Keyword(s):  
Experimental Data ◽  
Noise Analysis ◽  
Low Frequency ◽  
Deep Submicron ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
The Impact ◽  
Mobility Fluctuations

A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are illustrated through experimental data obtained on advanced CMOS generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown.

scholarly journals Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 673 ◽  
Author(s):  
Justinas Glemža ◽  
Vilius Palenskis ◽  
Andrejus Geižutis ◽  
Bronislovas Čechavičius ◽  
Renata Butkutė ◽  
...  
Keyword(s):  
Spectral Density ◽  
Laser Diodes ◽  
Low Frequency ◽  
Electrical Noise ◽  
Frequency Noise ◽  
Type I ◽  
Material System ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Forward Current

GaAsBi is a suitable and very attractive material system to be used as an active layer in laser diodes (LDs). To understand the performance and the reliability of such devices and also for further laser diode improvements, the origin of noise sources should be clarified. A detailed study of near-infrared 1.09 μm wavelength GaAsBi type-I laser diodes using the low-frequency noise spectroscopy in a temperature range of (180–300) K is presented. Different types of voltage fluctuation spectral density dependencies on the forward current far below the lasing threshold have been observed. According to this, investigated samples have been classified into two groups and two equivalent noise circuits with the corresponding voltage noise sources are presented. Calculations on the voltage spectral density of the electrical noise and current-voltage characteristic approximations have been performed and the results are consistent with the experimental data. The analysis showed that one group of LDs is characterized by 1/fα-type electrical fluctuations with one steep electrical bump in the electrical noise dependence on forward current, and the origin of these fluctuations is the surface leakage channel. The LDs of the other group have two bumps in the electrical noise dependence on current where the first bump is determined by overall LD defectiveness and the second bump by Bi-related defects in the active area of LD with characteristic Lorentzian-type fluctuations having the activation energy of (0.16–0.18) eV.

scholarly journals Data-Driven Modeling of Low Frequency Noise Using Capture-Emission Energy Maps

2020 ◽  
Vol 11 (1) ◽  
pp. 356
Author(s):  
Jonghwan Lee
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Gaussian Mixture ◽  
Noise Model ◽  
Accurate Estimation ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Emission Energy ◽  
Bias Temperature Instability

A new approach for modeling low frequency noise is presented to enable the predictions of noise behavior from negative bias temperature instability (NBTI). The noise model is based on a capture-emission energy (CEE) map describing the probability density function of widely distributed defect capture-emission activation energies. To enlarge the capture-emission energy window and to perform the accurate estimation of the recoverable component of CEE, the Gaussian mixture model (GMM) is applied to the CEE map. This approach provides an efficient identification of noise sources and an in-depth noise analysis under both stationary and cyclo-stationary conditions.

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

Low-frequency Noise Analysis of the Impact of an LaO Cap Layer in HfSiON/Ta2C Gate Stack nMOSFETs

2019 ◽  
Vol 25 (7) ◽  
pp. 237-245 ◽  
Author(s):  
Eddy R. Simoen ◽  
Amal Akheyar ◽  
Erika Rohr ◽  
Abdelkarim Mercha ◽  
C. Claeys
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gate Stack ◽  
Cap Layer ◽  
The Impact

Low frequency noise sources in AlGaN/GaN HEMTs

1999 ◽  
Author(s):  
J. A. Garrido ◽  
F. Calle ◽  
E. Muñoz ◽  
I. Izpura ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Gan Hemts

Ceiling Construction Low-Frequency Noise Issues

2013 ◽  
Vol 649 ◽  
pp. 277-280
Author(s):  
Petra Berková ◽  
Pavel Berka
Keyword(s):  
Spectral Analysis ◽  
Low Frequency ◽  
Sound Insulation ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Frequency Tone ◽  
The Impact ◽  
40 Hz

Through the use of a spectral analysis of the source of noise – person’s movement over the ceiling construction – it was found out that in this kind of noise distinctive low-frequency tone components occur (31,5 - 40 Hz) which is beyond the evaluation area of the impact sound insulation of the ceiling construction, s. [2], [3].

Sign in / Sign up

Export Citation Format

Share Document