scholarly journals SYNTHESIS OF CARBON NANOTUBES BY ECR PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION

2004 ◽  
Vol 03 (06) ◽  
pp. 845-851
Author(s):  
S. K. PATRA ◽  
G. MOHAN RAO

Carbon nanotubes have been grown using electron cyclotron resonance (ECR) plasma source at a substrate temperature of 500°C. Methane has been used as the source gas. A network of carbon nanotubes have been observed in Scanning Electron Microscopy (SEM). Transmission Electron Microscopy (TEM) revealed that the structure consists of straight, Y-junction and ring-like nanotubes. Further, electron diffraction (ED) of the nanotubes confirms graphite crystal structure.

2011 ◽  
Vol 264-265 ◽  
pp. 837-842
Author(s):  
Jin Cheng ◽  
Xiao Ping Zou

In this study, we report the synthesis of carbon nanotubes by floating catalytic chemical vapor deposition, which employs ferrocene as the catalyst precursors and ethanol as carbon source. We obtained massive deposits. The deposits were characterized by scanning electron microscopy, transmission electron microscopy, and visual laser Raman spectroscopy. We discussed the effects of synthesis temperature on the synthesis of carbon nanotubes by floating catalytic chemical vapor deposition. Our results indicated that the synthesis temperature could affect not only on the graphitization degree, but also on the aligned growth of carbon nanotubes and the diameter of carbon nanotubes.


1999 ◽  
Vol 593 ◽  
Author(s):  
H. Cui ◽  
D. Palmer ◽  
O. Zhou ◽  
B. R. Stoner

ABSTRACTAligned multi-wall carbon nanotubes have been grown on silicon substrates by microwave plasma enhanced chemical vapor deposition using methane/ammonia mixtures. The concentration ratio of methane/ammonia in addition to substrate temperature was varied. The morphology, structure and alignment of carbon nanotubes were studied by scanning electron microscopy and transmission electron microscopy. Both concentric hollow and bamboo-type multi-wall carbon nanotubes were observed. Growth rate, size distribution, alignment, morphology, and structure of carbon nanotubes changed with methane/ammonia ratio and growth temperature. Preliminary results on field emission properties are also presented.


1993 ◽  
Vol 301 ◽  
Author(s):  
Jim L. Rogers ◽  
Walter J. Varhue ◽  
Edward Adams

ABSTRACTThin Si films doped with Er have been grown at low temperature by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organo-metallic compound fed into the process chamber. High doping concentrations without precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance (ECR) plasma stream source. A hydrogen plasma stream is used to perform an in-situ pre-deposition clean to remove oxide from the Si surface. Film crystallinity and impurity concentration are determined by Rutherford backscattering spectrometry.


NANO ◽  
2009 ◽  
Vol 04 (06) ◽  
pp. 359-366 ◽  
Author(s):  
MEHRNOUSH KHAVARIAN ◽  
SIANG-PIAO CHAI ◽  
SOON HUAT TAN ◽  
ABDUL RAHMAN MOHAMED

Carbon nanotubes (CNTs) were synthesized by a low-cost floating catalyst (FC) chemical vapor deposition (CVD) method in a horizontal reactor. It was found that iron (III) chloride ( FeCl3 ) is a high efficient FC precursor for methane CVD to grow CNTs. In this study, the effects of reaction temperature and flow ratio of methane to nitrogen ( CH4:N2 ) on the morphology of the CNTs were investigated. The morphological analysis by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) revealed that increasing the reaction temperature and flow ratio of CH4:N2 grew CNTs of larger diameters. Energy dispersive X-ray (EDX) and thermogravimetric analysis (TGA) were employed to study the purity of the produced CNTs. As shown by the TGA, the highest yield of 74.19% was recorded for the CNTs grown at 1000°C and flow ratio CH4:N2 of 300:200.


1994 ◽  
Vol 345 ◽  
Author(s):  
Kun-Chih Wang ◽  
Tri-Rung Yew ◽  
Huey-Liang Hwang

AbstractThis paper presents the results of low temperature deposition of poly-Si films deposited on SiO2 layers. Hydrogen dilution, hydrogen atom treatment, and hydrogenation of the SiO2 surface steps were applied to deposit the Si films. The above treatment steps were usually used in the plasma enhanced chemical vapor deposition and they were extended to be used in the electron cyclotron resonance chemical vapor deposition to identify the grain growth effects. The nucleation and microstructure of the silicon films were observed by cross-section transmission electron microscopy (XTEM).


2003 ◽  
Vol 772 ◽  
Author(s):  
Qixiang Wang ◽  
Guoqing Ning ◽  
Fei Wei ◽  
Guohua Luoa

AbstractBundles of single walled 0.4 nm carbon nanotubes were prepared by chemical vapor deposition using n-hexane as carbon source catalyzed by ferrocene with additives of thiophene at 1373 K. 8 cm long rope of single walled carbon nanotubes with diameters of 0.8-1.18 nm was also synthesized. The products were characterized by scanning electron microscopy, high resolution transmission electron microscopy and Raman spectroscopy.


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