Sb surfactant-mediated epitaxy of Ge on Si(113) studied by AFM, SEM and GIXRD
Keyword(s):
X Ray
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AbstractWe have investigated the Sb surfactant-mediated growth of Ge on Si(113) over the temperature range from 500°C to 700°C. The surface morphology, film thickness, interface roughness and strain state of the films have been determined by the use of scanning electron microscopy, atomic force microscopy and grazing incidence x-ray diffraction. After growth at temperatures between 500°C and 600°C smooth Ge films have been observed, which show a partial strain relaxation. However, increasing the temperature to 700°C, a rough surface with a high density of three-dimensional islands has been found.
2008 ◽
Vol 8
(8)
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pp. 4127-4131
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2008 ◽
Vol 8
(4)
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pp. 1757-1761
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