MOLECULAR DYNAMICS STUDY OF THE INTERFACE-STRUCTURE FORMATION OF A COPPER/SILVER BILAYER
The formation of the interface of a Cu/Ag bilayer during sputtering was studied with molecular dynamics simulations with EAM potential. The results show that the first deposited Ag layer grows on the Cu substrate by the layer mode, while the first deposited Cu layer grows on the Ag substrate by the island mode for both the (111) and (001) orientated growth. The film is epitaxial up to the coverage, reaching about 10 monolayers except for Cu growth on Ag (001). Ag atoms in the (001) orientated substrate diffuse into the Cu film for a longer distance compared to other cases. The interface is sharp and exhibits a (9 × 9) superstructure with hexagonal moiré pattern for both Ag growth on Cu (111) and Cu growth on Ag (111). The displacement of the superposed Cu atoms contributes to the corrugation of the interface for both cases. A c(10 × 2) superstructure forms when Ag grows on Cu (001). When Cu is deposited on Ag (001), partial dislocations are activated near the interface, and a great number of stacking faults form in the Cu film with the significantly curved interface.