Synthesis and Characterization of ZnO Nanorods Using Molecular Beam Epitaxy
We present the study of the growth of ZnO nanorods on p-Si (100) using MBE. Various characterization techniques such as Fourier transform infra-red (FTIR), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), Raman spectroscopy and capacitance – voltage (C-V) measurements were employed to analyze and assess the grown ZnO nanorods. AFM clearly demonstrated the growth of vertically aligned nanorods, however, they get diffused as the thickness of the layer is increased beyond 1 µm. C-V measurements in particular, justified p-n junction between Si/ZnO nanorods. The junction showed n-type conductivity with carrier concentration 1×1015cm-3. The source of this n-type conductivity was Zn-interstitials and the presence of Zn-interstitials was confirmed by EDAX and Raman spectroscopy. Experimental detail and results were presented that help in furtherance of our understanding of the material issues and its potential as required for the practical devices.