AQUEOUS SYNTHESIS OF HIGH QUANTUM YIELD AND MONODISPERSED THIOL-CAPPED CdxZn1-xTe QUANTUM DOTS BASED ON ELECTROCHEMICAL METHOD

NANO ◽  
2012 ◽  
Vol 07 (02) ◽  
pp. 1250011 ◽  
Author(s):  
JUNWEI LI ◽  
YANG JIANG ◽  
YUGANG ZHANG ◽  
DI WU ◽  
ANQI LUO ◽  
...  

A facile green approach has been developed to control the growth regime in the aqueous synthesis of CdxZn1-xTe semiconductor quantum dots (QDs) based on the electrochemistry method. The Low growth temperature and slow injection of Te precursor are used to prolong the diffusion controlled stage and thus suppress Ostwald ripening during the nanocrystal growth. The experimental results showed that a low concentration of Te precursor will definitely influence the growth procedure. The UV–visible absorption spectra, as well as transmission electron microscopy (TEM) shows the QDs a good monodispersity at any interval of the reaction procedure. The high-resolution transmission electron microscopy (HRTEM) images and powder X-ray diffraction (XRD) pattern suggested that the as-prepared QDs have high crystallinity and cubic structure. The size and composition-dependent fluorescent emission wavelength of the resultant CdxZn1-xTe alloyed QDs can be tuned from 460 to 610 nm, and their photoluminescent quantum yield can reach up to 70%. Especially in the wavelength range of 510–578 nm, the overall PL QYs of the as-prepared CdxZn1-xTe QDs were above 50%. The current work suggests that electrochemical method is an attractive approach to the synthesis of high-quality II-VI ternary alloyed semiconductor QDs at large-scale with a prominent cost advantage.

2015 ◽  
Vol 1792 ◽  
Author(s):  
Mourad Benamara ◽  
Yuriy I. Mazur ◽  
Peter Lytvyn ◽  
Morgan E. Ware ◽  
Vitaliy Dorogan ◽  
...  

ABSTRACTThe influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.


2007 ◽  
Vol 353-358 ◽  
pp. 2163-2166
Author(s):  
Ming Yang ◽  
Guo Qing Zhou ◽  
Jiang Guo Zhao ◽  
Zhan Jun Li

Nanocubes, monodispersed nanocrystals and nanospheres of Au have been prepared by a simple reaction between HAuCl4·4H2O, NaOH and NH2OH·HCl in the presence of gelatin. The role of gelatin and the affection of pH in producing the nanoparticles of Au were discussed. The products were characterized by X-ray powder diffraction, transmission electron microscopy, and UV-visible absorption spectroscopy. The sizes of the monodispersed nanocrystals of Au were estimated by Debye-Scherrer formula according to XRD spectrum.


Author(s):  
Nguyen Ca ◽  
N. D Vinh ◽  
Phan Van Do ◽  
N. T. Hien ◽  
Xuan Hoa Vu ◽  
...  

Tb3+-doped ZnSe quantum dots (QDs) with Tb content in the range of 0.5 - 7% were successfully synthesized by a wet chemical method. X-ray diffraction (XRD) and transmission electron microscopy...


CrystEngComm ◽  
2020 ◽  
Vol 22 (21) ◽  
pp. 3644-3655
Author(s):  
Stefan Neumann ◽  
Christina Menter ◽  
Ahmed Salaheldin Mahmoud ◽  
Doris Segets ◽  
David Rafaja

Capability of TEM and XRD to reveal scale-bridging information about the microstructure of non-monodisperse quantum dots is illustrated on the CdSe quantum dots synthesized using an automated hot-injection method.


2007 ◽  
Vol 26-28 ◽  
pp. 1207-1210
Author(s):  
Hyung Seok Kim ◽  
Ju Hyung Suh ◽  
Chan Gyung Park ◽  
Sang Jun Lee ◽  
Sam Kyu Noh ◽  
...  

The microstructure and strain characteristics of self-assembled InAs/GaAs quantum dots (QDs) were studied by using transmission electron microscopy. Compressive strain was induced to uncapped QDs from GaAs substrate and the misfit strain largely increased after the deposition of GaAs cap layer. Tensile strain outside QD was extended along the vertical growth direction; up to 15 nm above the wetting layer. Vertically nonaligned and aligned stacked QDs were grown by adjusting the thickness of GaAs spacer layers. The QDs with a lens-shaped morphology were formed in the early stage of growth, and their apex was flattened by the out-diffusion of In atoms upon GaAs capping. However, aligned QDs maintained their lens-shaped structure with round apex after capping. It is believed that their apex did not flatten because the chemical potential gradient of In was relatively low due to the adjacent InAs QD layers.


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