scholarly journals Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

2017 ◽  
Vol 05 (02) ◽  
pp. 1750006 ◽  
Author(s):  
R. Islam ◽  
M. M. Uddin ◽  
M. Mofazzal Hossain ◽  
M. A. Matin
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Short Circuit ◽  
Current Gain ◽  
Potential Candidate ◽  
High Electron ◽  
Well Field ◽  
Effect Transistor

The design of a 1[Formula: see text][Formula: see text]m gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10[Formula: see text]nm-thick Al2O3 gate dielectric has been optimized using a quantum corrected self-consistent Schrödinger-Poisson (QCSP) and two-dimensional drift-diffusion model. The model predicts a very high electron mobility of 4.42[Formula: see text]m2V[Formula: see text]s[Formula: see text] at [Formula: see text][Formula: see text]V, a small pinch off gate voltage ([Formula: see text]) of [Formula: see text]0.25[Formula: see text]V, a maximum extrinsic transconductance ([Formula: see text]) of [Formula: see text][Formula: see text]4.85[Formula: see text]mS/[Formula: see text]m and a drain current density of more than 3.34[Formula: see text]mA/[Formula: see text]m. A short-circuit current-gain cut-off frequency ([Formula: see text]) of 374[Formula: see text]GHz and a maximum oscillation frequency ([Formula: see text]) of 645[Formula: see text]GHz are predicted for the device. These characteristics make the device a potential candidate for low power, high-speed logic electronic device applications.

Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

2003 ◽  
Vol 94 (5) ◽  
pp. 3556-3562 ◽  
Author(s):  
V. V. Popov ◽  
O. V. Polischuk ◽  
T. V. Teperik ◽  
X. G. Peralta ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Effect Transistor ◽  
Plasmon Modes

Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures

2006 ◽  
Vol 21 (10) ◽  
pp. 1408-1411 ◽  
Author(s):  
J M S Orr ◽  
P D Buckle ◽  
M Fearn ◽  
P J Wilding ◽  
C J Bartlett ◽  
...  
Keyword(s):  
Quantum Well ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Well Field ◽  
Effect Transistor

A composite quantum well field‐effect transistor

1996 ◽  
Vol 69 (1) ◽  
pp. 85-87 ◽  
Author(s):  
M. J. Yang ◽  
Fu‐Cheng Wang ◽  
C. H. Yang ◽  
B. R. Bennett ◽  
T. Q. Do
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Well Field ◽  
Effect Transistor

ERRATA: "THz DETECTION BY RESONANT 2-D PLASMONS IN FIELD EFFECT DEVICES"

2002 ◽  
Vol 12 (03) ◽  
pp. 925-937 ◽  
Author(s):  
X. G. PERALTA ◽  
S. J. ALLEN ◽  
M. C. WANKE ◽  
N. E. HARFF ◽  
M. P. LILLY ◽  
...  
Keyword(s):  
Quantum Well ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Thz Radiation ◽  
Double Quantum ◽  
Double Quantum Well ◽  
Well Field ◽  
Field Effect Devices ◽  
Effect Transistor

We demonstrate resonant detection of terahertz radiation by two-dimensional plasma waves in two field effect devices: a commercial field effect transistor (FET) and a double quantum well field effect transistor with a periodic grating gate. In both devices, the standing 2-D plasmon is tuned to the frequency of the THz radiation by varying the gate bias. The double quantum well field effect transistors exhibits a rich photoconductive response corresponding to spatial harmonics of the standing 2-D plasmons under the metal part of the periodic gate.

Sign in / Sign up

Export Citation Format

Share Document