Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well

2008 ◽  
Vol 1 ◽  
pp. 051402 ◽  
Author(s):  
Maksym Myronov ◽  
Kentarou Sawano ◽  
Kohei M. Itoh ◽  
Yasuhiro Shiraki
Keyword(s):  
Quantum Well ◽  
Transport Properties ◽  
Room Temperature ◽  
Compressive Strain ◽  
Pronounced Effect ◽  
Two Dimensional

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

2021 ◽  
Author(s):  
Haohao Sheng ◽  
Haoxiang Long ◽  
Guanzhen Zou ◽  
Dongmei Bai ◽  
Junting Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Room Temperature ◽  
Phonon Transport ◽  
Two Dimensional

Transport properties of two-dimensional hole gas in a Ge1−x Si x /Ge/Ge1−x Si x quantum well in the vicinity of metal-insulator transition

2007 ◽  
Vol 41 (11) ◽  
pp. 1315-1322 ◽  
Author(s):  
Yu. G. Arapov ◽  
V. N. Neverov ◽  
G. I. Harus ◽  
N. G. Shelushinina ◽  
M. V. Yakunin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Transport Properties ◽  
Insulator Transition ◽  
Two Dimensional ◽  
Metal Insulator Transition ◽  
Metal Insulator

Epitaxial growth of antiperovskite GaCMn3 film on perovskite LaAlO3 substrate

2002 ◽  
Vol 17 (10) ◽  
pp. 2640-2643 ◽  
Author(s):  
H. S. Choi ◽  
W. S. Kim ◽  
J. C. Kim ◽  
N. H. Hur
Keyword(s):  
Transport Properties ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Compressive Strain ◽  
Pulsed Laser ◽  
Bulk Sample ◽  
Laser Deposition ◽  
Strain Effect ◽  
Deposition Technique

We report on the magnetic and transport properties of the antiperovskite GaCMn3 film epitaxially grown on LaAlO3 using the pulsed laser deposition technique. Upon cooling from room temperature, the GaCMn3 film undergoes magnetic transitions from paramagnetic to ferromagnetic to antiferromagnetic. The Curie and Neél temperatures of the film shift to lower and higher temperatures, respectively, by comparison with those of the bulk sample. This discrepancy is mainly ascribed to the compressive strain effect induced by the lattice-mismatch between film and substrate. Negative magnetoresistance, which is about 20% at 0.5 T, is observed near the Neél temperature.

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