Investigation on characteristics of millisecond solid phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication

2021 ◽  
Author(s):  
Hoa Thi Khanh Nguyen ◽  
Hiroaki Hanafusa ◽  
Ryuji Kawakita ◽  
Shohei Hayashi ◽  
Seiichiro HIGASHI
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Arc Discharge ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Dc Arc ◽  
Bottom Gate

Study of thin Film Formation From Silicon-Containing Precursors Produced by an RF Non-Thermal Plasma Jet at Atmospheric Pressure

2012 ◽  
Vol 52 (10) ◽  
pp. 872-880 ◽  
Author(s):  
J. Schäfer ◽  
R. Foest ◽  
F. Sigeneger ◽  
D. Loffhagen ◽  
K.-D. Weltmann ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Film Formation ◽  
Plasma Jet ◽  
Thermal Plasma Jet ◽  
Non Thermal Plasma ◽  
Thin Film Formation

Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique

2010 ◽  
Vol 49 (3) ◽  
pp. 03CA08 ◽  
Author(s):  
Seiichiro Higashi ◽  
Kenji Sugakawa ◽  
Hirotaka Kaku ◽  
Tatsuya Okada ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Thermal Plasma ◽  
Thin Film Transistors ◽  
Plasma Jet ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Thermal Plasma Jet

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

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