(Invited) Analysis of a Molten Region on Amorphous Silicon Film By High-Speed Camera and Contactless Temperature Measurement during Atmospheric Pressure Thermal Plasma Jet Annealing

2018 ◽  
Keyword(s):  
Temperature Measurement ◽  
Amorphous Silicon ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
High Speed ◽  
Silicon Film ◽  
Plasma Jet ◽  
High Speed Camera ◽  
Amorphous Silicon Film ◽  
Molten Region

Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

2015 ◽  
Vol 51 (21) ◽  
pp. 4417-4420 ◽  
Author(s):  
Zhongrong Shen ◽  
Takashi Masuda ◽  
Hideyuki Takagishi ◽  
Keisuke Ohdaira ◽  
Tatsuya Shimoda
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Silicon ◽  
High Throughput ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Cost Reduction ◽  
Film Formation ◽  
Silicon Film ◽  
High Quality ◽  
Amorphous Silicon Film

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.

scholarly journals Interactive Effects in Two-Droplets Combustion of RP-3 Kerosene under Sub-Atmospheric Pressure

Processes ◽  
2021 ◽  
Vol 9 (7) ◽  
pp. 1229
Author(s):  
Hongtao Zhang ◽  
Zhihua Wang ◽  
Yong He ◽  
Jie Huang ◽  
Kefa Cen
Keyword(s):  
Burning Rate ◽  
Atmospheric Pressure ◽  
High Speed ◽  
Ambient Pressure ◽  
Interactive Effects ◽  
Propagation Time ◽  
High Speed Camera ◽  
Single Droplet ◽  
Fuel Droplets ◽  
Spacing Distance

To improve our understanding of the interactive effects in combustion of binary multicomponent fuel droplets at sub-atmospheric pressure, combustion experiments were conducted on two fibre-supported RP-3 kerosene droplets at pressures from 0.2 to 1.0 bar. The burning life of the interactive droplets was recorded by a high-speed camera and a mirrorless camera. The results showed that the flame propagation time from burning droplet to unburned droplet was proportional to the normalised spacing distance between droplets and the ambient pressure. Meanwhile, the maximum normalised spacing distance from which the left droplet can be ignited has been investigated under different ambient pressure. The burning rate was evaluated and found to have the same trend as the single droplet combustion, which decreased with the reduction in the pressure. For every experiment, the interactive coefficient was less than one owing to the oxygen competition, except for the experiment at L/D0 = 2.5 and P = 1.0 bar. During the interactive combustion, puffing and microexplosion were found to have a significant impact on secondary atomization, ignition and extinction.

Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric pressure micro-thermal-plasma-jet irradiation

2021 ◽  
Author(s):  
Takuma Sato ◽  
Hiroaki Hanafusa ◽  
Seiichiro HIGASHI
Keyword(s):  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Hole Concentration ◽  
Thin Film Transistor ◽  
Plasma Jet ◽  
Scanning Speed ◽  
Electrical Characteristics ◽  
Thermal Plasma Jet ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Crystalline-germanium (c-Ge) is an attractive material for a thin-film transistor (TFT) channel because of its high carrier mobility and applicability to a low-temperature process. We present the electrical characteristics of c-Ge crystallized by atmospheric pressure micro-thermal-plasma-jet (µ-TPJ). The µ-TPJ crystalized c-Ge showed the maximum Hall mobility of 1070 cm2·V−1·s−1 with its hole concentration of ~ 1016 cm−3, enabling us to fabricate the TFT with field-effect mobility (μ FE) of 196 cm2·V−1·s−1 and ON/OFF ratio (R ON/OFF) of 1.4 × 104. On the other hand, RON/OFFs and μFEs were dependent on the scanning speed of the TPJ, inferring different types of defects were induced in the channel regions. These findings show not only a possibility of the TPJ irradiation as a promising method to make a c-Ge TFT on insulating substrates.

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