Stopping Cross-Sections of Rare Gases in Amorphous Silicon for MeV Energy Helium Ions

1983 ◽  
Vol 22 (Part 1, No. 8) ◽  
pp. 1306-1309
Author(s):  
Akio Ootuka ◽  
Ken-ichiro Komaki ◽  
Fuminori Fujimoto ◽  
Kiyoshi Kawatsura ◽  
Kunio Ozawa ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Cross Sections ◽  
Rare Gases ◽  
Helium Ions

Further investigations of charge exchange and electron detachment - I. Ion energies 3 to 40 keV - II. Ion energies 100 to 4000 eV

1955 ◽  
Vol 227 (1171) ◽  
pp. 466-486 ◽  
Keyword(s):  
Charge Transfer ◽  
Energy Range ◽  
Cross Sections ◽  
Atomic Hydrogen ◽  
Molecular Hydrogen ◽  
Hydrogen Ions ◽  
Electron Detachment ◽  
Rare Gases ◽  
Helium Ions ◽  
Ion Energies

This paper describes the measurement of charge transfer cross-sections for protons, molecular hydrogen ions and helium ions in the rare gases and hydrogen, and electron detachment cross-sections for negative atomic hydrogen ions in the rare gases. Part I describes the energy range 3 to 40 keV. In part II the energy range 100 to 4000 eV is described, and the results are discussed in terms of the pseudo-adiabatic hypothesis. Comparisons are made with other experimental results, and anomalous molecular cases are discussed in terms of reactions involving anti-bonding states.

Peak-To-Peak Voltage (Vp-p) on Rf Powered-Electrode and Sensitivity of Amorphous Silicon (A-Si) Photoreceptor

1990 ◽  
Vol 192 ◽  
Author(s):  
Toshinori Yamazaki ◽  
Nobuaki Kobayashi ◽  
Satoshi Takahashi ◽  
Tatsuo Nakanishi
Keyword(s):  
Amorphous Silicon ◽  
Cross Sections ◽  
Rare Gases ◽  
Dilution Ratio ◽  
Peak Voltage ◽  
Molecular Gases ◽  
Deposition Parameters ◽  
Dc Bias ◽  
Ramsauer Effect ◽  
Peak Value

ABSTRACTIt has been found that photosensitivity of amorphous silicon (a-Si) photoreceptor fabricated by g1ow-discharge decomposition of SiH4 – B2H6 – Ar has specific relation to peak-to-peak value of Rf (13.5 MHz) voltage (Vp - p) and DC bias voltage (Vdc) on the Rf powered-electrode. The lower the Vp - p value is depressed, the higher the photosensitivity is improved. Dependences of the Vp - p value on deposition parameters such as gas pressure, distance between Rf powered-e1ectrode and aluminum substrate, Rf electric power and dilution ratio of SiH4 to Ar seem to indicate correlation of Vp - p with electron energy and electron density in the plasma.Furthermore, the Vp - p and Vdc values have been measured in plasma of He, Ne (rare-gases with no Ramsauer effect), Ar, Kr, Xe (rare-gases with Ramsauer effect), and H2, N2, CH4, SiH4 (molecular-gases): Specific behaviors in Vp - p and Vdc seem to have correlation with collision cross - sections of electrons (with the energy of 2 ∼ 10 eV) in these gases.

Angular, energy and charge distribution in the scattering of low-energy helium ions by an amorphous silicon surface

1998 ◽  
Vol 10 (4) ◽  
pp. 741-752 ◽  
Author(s):  
B Arezki ◽  
Y Boudouma ◽  
P Benoit-Cattin ◽  
A C Chami ◽  
C Benazeth ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Charge Distribution ◽  
Silicon Surface ◽  
Low Energy ◽  
Helium Ions ◽  
Angular Energy

Diffusion cross sections for potassium and levels in rare gases

1996 ◽  
Vol 29 (3) ◽  
pp. 435-448 ◽  
Author(s):  
F Yahyaei-Moayyed ◽  
A P Hickman ◽  
A D Streater
Keyword(s):  
Cross Sections ◽  
Rare Gases

Fine Structure Transition Cross Sections of Ar+and Ne+in Collisions with Rare Gases

1990 ◽  
Vol 59 (3) ◽  
pp. 898-901 ◽  
Author(s):  
Atsushi Fukuroda ◽  
Nobuo Kobayashi ◽  
Yozaburo Kaneko
Keyword(s):  
Fine Structure ◽  
Cross Sections ◽  
Rare Gases ◽  
Structure Transition

Analytical Determination of Generation-Recombination Rate In Amorphous Silicon

1986 ◽  
Vol 70 ◽  
Author(s):  
Jože Furlan ◽  
Slavko Amon
Keyword(s):  
Analytical Solution ◽  
Amorphous Silicon ◽  
Cross Sections ◽  
Recombination Rate ◽  
Exponential Model ◽  
Localized States ◽  
Analytical Determination ◽  
Capture Cross ◽  
Capture Cross Sections

ABSTRACTA general expression for generation-recombination rate in a-Si based on classical SRH theory including different electron and hole capture cross-sections for donor-like and acceptor-like centers inside the mobility gap is derived. Applying appropriate approximations and two-exponential model for localized states distribution two methods of analytical solution are presented and discussed.

Net-ionization cross sections of rare gases by fully-stripped heavy ion impact

1997 ◽  
Vol T73 ◽  
pp. 238-239 ◽  
Author(s):  
S Makino ◽  
T Matsuo ◽  
M Mizutani ◽  
M Sano ◽  
T Kohno ◽  
...  
Keyword(s):  
Cross Sections ◽  
Heavy Ion ◽  
Rare Gases ◽  
Ionization Cross ◽  
Ion Impact ◽  
Ionization Cross Sections

Single Wafer Amorphous Silicon Process Evaluation

1997 ◽  
Vol 467 ◽  
Author(s):  
David O'Meara ◽  
Chow Ling Chang ◽  
Roc Blumenthal ◽  
Rama I. Hegde ◽  
Lata Prabhu ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Surface Morphology ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Cross Sections ◽  
Growth Conditions ◽  
Degree Of Crystallinity ◽  
Deposition Parameters ◽  
Before And After ◽  
Production Requirement

ABSTRACTSingle wafer amorphous silicon deposition was characterized through process modeling and film characterization for application in semiconductor production. DOE methodology was used to determine the main deposition parameters, and the responses were limited to device production requirement properties of surface roughness, deposition rate and degree of crystallinity of the as-deposited film. The data trends and models show that deposition temperature and silane flow are the main factors. Increasing either or both factor increases the deposition rate and the surface roughness. The surface morphology, evaluated by AFM, SEM and TEM, was found to be rougher at extreme growth conditions than the poly crystalline film formed after anneal. The as-deposited surface morphology was not a result of pre-anneal crystal formations as determined by TEM cross sections of samples before and after anneal. Lack of crystalinity is important for impurity diffusion considerations. Device application of the single wafer a-Si process will be a compromise between growth rate (and associated throughput) and surface roughness that can be tolerated.

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