Raman Image Measurements of Laser-Recrystallized Polycrystalline Si Films by a Scanning Raman Microprobe

1986 ◽  
Vol 25 (Part 2, No. 3) ◽  
pp. L222-L224 ◽  
Author(s):  
Shin-ichi Nakashima ◽  
Kohji Mizoguchi ◽  
Yasuo Inoue ◽  
Michihiro Miyauchi ◽  
Akiyoshi Mitsuishi ◽  
...  
Keyword(s):  
Raman Microprobe ◽  
Si Films ◽  
Raman Image

Confocal Raman mapping

1992 ◽  
Vol 50 (2) ◽  
pp. 1514-1515
Author(s):  
J. Barbillat ◽  
M. Delhaye ◽  
P. Dhamelincourt
Keyword(s):  
Chemical Species ◽  
Diffraction Limit ◽  
Microscopic Level ◽  
Raman Mapping ◽  
Complete Spectrum ◽  
Laser Illumination ◽  
Ccd Detector ◽  
Raman Microprobe ◽  
Photodiode Array ◽  
Raman Image

Raman mapping, with a spatial resolution close to the diffraction limit, can help to reveal the distribution of chemical species at the surface of an heterogeneous sample.As early as 1975,three methods of sample laser illumination and detector configuration have been proposed to perform Raman mapping at the microscopic level (Fig. 1),:- Point illumination:The basic design of the instrument is a classical Raman microprobe equipped with a PM tube or either a linear photodiode array or a two-dimensional CCD detector. A laser beam is focused on a very small area ,close to the diffraction limit.In order to explore the whole surface of the sample,the specimen is moved sequentially beneath the microscope by means of a motorized XY stage. For each point analyzed, a complete spectrum is obtained from which spectral information of interest is extracted for Raman image reconstruction.- Line illuminationA narrow laser line is focused onto the sample either by a cylindrical lens or by a scanning device and is optically conjugated with the entrance slit of the stigmatic spectrograph.

The Depth Profiling of the Crystal Quality in Laser-Annealed Polycrystalline Si Films by Raman Microprobe

1986 ◽  
Vol 25 (Part 1, No. 6) ◽  
pp. 798-801 ◽  
Author(s):  
Yasuo Inoue ◽  
Shin-ichi Nakashima ◽  
Akiyoshi Mitsuishi ◽  
Tadashi Nishimura ◽  
Yoichi Akasaka
Keyword(s):  
Depth Profiling ◽  
Crystal Quality ◽  
Raman Microprobe ◽  
Si Films

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

Raman And Fluorescence Spectra Observed in Laser Microprobe Measurements of Several Compositions in the Ln-Ba-Cu-O System

1990 ◽  
Vol 48 (2) ◽  
pp. 278-279
Author(s):  
Edgar S. Etz ◽  
Thomas D. Schroeder ◽  
Winnie Wong-Ng
Keyword(s):  
Fluorescence Spectra ◽  
Single Phase ◽  
X Ray Diffraction ◽  
Ceramic Powders ◽  
Conventional Solid State Reaction ◽  
X Ray ◽  
Raman Microprobe ◽  
Methods Of Synthesis ◽  
Compositional Homogeneity ◽  
Processing Techniques

We are investigating by Raman microprobe measurements the superconducting and related phases in the LnBa2Cu3O7-x (for x=0 to 1) system where yttrium has been replaced by several of the lanthanide (Ln = Nd,Sm,Eu,Ho,Er) elements. The aim is to relate the observed optical spectra (Raman and fluorescence) to the compositional and structural properties of these solids as part of comprehensive materials characterization. The results are correlated with the methods of synthesis, the processing techniques of these materials, and their superconducting properties. Of relevance is the substitutional chemistry of these isostructural systems, the differences in the spectra, and their microanalytical usefulness for the detection of impurity phases, and the assessment of compositional homogeneity. The Raman spectra of most of these compounds are well understood from accounts in the literature.The materials examined here are mostly ceramic powders prepared by conventional solid state reaction techniques. The bulk samples are of nominally single-phase composition as determined by x-ray diffraction.

MICROELECTRONICS APPLICATIONS OF DEPOSITED Si FILMS RECRYSTALLIZED FROM THE MELT

1982 ◽  
Vol 43 (C1) ◽  
pp. C1-353-C1-362
Author(s):  
G. K. Celler ◽  
L. E. Trimble
Keyword(s):  
Si Films

TRANSPORT PROPERTIES OF COMPENSATED a-Si FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-103-C4-106
Author(s):  
W. Beyer ◽  
H. Mell ◽  
H. Overhof
Keyword(s):  
Transport Properties ◽  
Si Films

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

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