Morphology of Diamond Films Grown by DC Plasma Jet CVD

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

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Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously

Materials Today Communications ◽

10.1016/j.mtcomm.2019.100816 ◽

2020 ◽

Vol 22 ◽

pp. 100816 ◽

Cited By ~ 2

Author(s):

A.L. Vikharev ◽

M.A. Lobaev ◽

A.M. Gorbachev ◽

D.B. Radishev ◽

V.A. Isaev ◽

...

Keyword(s):

Growth Rate ◽

Microwave Plasma ◽

High Growth ◽

High Growth Rate ◽

Plasma Cvd ◽

High Quality ◽

Homoepitaxial Growth ◽

Microwave Plasma Cvd

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High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds

Chinese Physics Letters ◽

10.1088/0256-307x/9/8/015 ◽

1992 ◽

Vol 9 (8) ◽

pp. 444-447 ◽

Cited By ~ 3

Author(s):

Wang Wanlu ◽

Gao Jinying ◽

Liao Kejun

Keyword(s):

Growth Rate ◽

Organic Compounds ◽

Diamond Films ◽

High Growth ◽

High Growth Rate ◽

Plasma Cvd ◽

Dc Plasma

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Trial of Diamond Synthesis with High-Growth Rate by DC Plasma CVD Using a Diamond Cathode.

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.50.650 ◽

1999 ◽

Vol 50 (7) ◽

pp. 650-651

Author(s):

Toshihide MIKAMI ◽

Yutaka ISHIKAWA ◽

Hiroshi YAMANAKA ◽

Yoichi HIROSE

Keyword(s):

Growth Rate ◽

High Growth ◽

High Growth Rate ◽

Diamond Synthesis ◽

Plasma Cvd ◽

Dc Plasma

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Promoting secondary nucleation using methane modulations during diamond chemical vapor deposition to produce smoother, harder, and better quality films

Journal of Materials Research ◽

10.1557/jmr.2003.0041 ◽

2003 ◽

Vol 18 (2) ◽

pp. 296-304 ◽

Cited By ~ 21

Author(s):

N. Ali ◽

V.F. Neto ◽

J. Gracio

Keyword(s):

Growth Rate ◽

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Plasma Cvd ◽

Secondary Nucleation ◽

Microwave Plasma Cvd ◽

Hot Filament Cvd ◽

Hot Filament

In this paper, we present results obtained from a comparison study relating to the deposition of diamond films using two processes, namely, time-modulated chemical vapor deposition (TMCVD) and conventional CVD. Polycrystalline diamond films were deposited onto silicon substrates using both hot-filament CVD and microwave plasma CVD systems. The key feature of TMCVD is that it modulates methane (CH4) flow during diamond CVD, whereas in conventional CVD the CH4 flow is kept constant throughout the deposition process. Films grown using TMCVD were smoother, harder, and displayed better quality than similar films grown using constant CH4 flow during CVD. The advantage of using TMCVD is that it promotes secondary nucleation to occur on existing diamond crystals. Pulsing CH4, consecutively, at high and low concentrations allows the depositing film to maintain its quality in terms of diamond-carbon phase. Films grown under constant CH4 flow during diamond CVD displayed a columnar growth mode, whereas with the time modulated films the growth mode was different. The mechanism of film growth during TMCVD is presented in this paper. The growth rate of films obtained using the hot filament CVD system with constant CH4 flow was higher than the growth rate of time modulated films. However, using the microwave-plasma CVD system, the effect was the contrary and the time-modulated films were grown at a higher rate. The growth rate results are discussed in terms of substrate temperature changes during TMCVD.

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