A Simple Process for Lateral Single Crystal Silicon Nanowires
Keyword(s):
In a single-mask standard photolithography based process and a single etch step, lateral silicon nanowires are fabricated according to arbitrary layout and over a range of diameters and lengths. Nanowires with diameters from ∼20 nm and with lengths ranging from 2 μm to 100 μm were fabricated in direct contact with two silicon probing pads for measurement. These nanowires are electrically isolated in the silicon-on-insulator wafer device layer, and suspended over the substrate, thereby increasing thermal and electrical isolation. Because they are formed from single crystal silicon, minimal defects are expected. The addition of a polysilicon deposition and patterning further enhances the process by allowing coaxial silicon nanostructures.
2014 ◽
Vol 926-930
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pp. 881-884
1985 ◽
Vol 43
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pp. 300-301
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2017 ◽
Vol 17
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pp. 1525-1529
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2017 ◽
Vol 17
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pp. 2857-2860
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2019 ◽
Vol 30
(1)
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pp. 015003
2005 ◽
Vol 411
(1-3)
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pp. 198-202
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2002 ◽
Vol 13
(2-4)
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pp. 999-1002
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