Analytical Model to Determine the Gate Leakage Current inIn0.52Al0.48As/InxGa1-xAsPseudomorphic Modulation Doped Field-Effect Transistors Caused by Thermionic Field Emission

Gate Leakage Current ◽

Gate Leakage ◽

Thermionic Field Emission

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Effects of interface states on submicron GaAs metal–semiconductor field-effect transistors assessed by gate leakage current

10.1116/1.588180 ◽

1995 ◽

Vol 13 (4) ◽

pp. 1519 ◽

Cited By ~ 25

Author(s):

M. M. Ahmed

Keyword(s):

Leakage Current ◽

Field Effect ◽

Interface States ◽

Gate Leakage Current ◽

Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Cited By ~ 12

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

Applied Physics Letters ◽

10.1063/1.1852089 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032103 ◽

Cited By ~ 38

Author(s):

R. W. I. de Boer ◽

N. N. Iosad ◽

A. F. Stassen ◽

T. M. Klapwijk ◽

A. F. Morpurgo

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Leakage Current ◽

Field Effect ◽

Gate Leakage Current ◽

Gate Leakage ◽

Crystal Field Effect ◽

Organic Single Crystal ◽

The Stability

Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2894 ◽

2002 ◽

Vol 41 (Part 1, No. 5A) ◽

pp. 2894-2899 ◽

Cited By ~ 8

Author(s):

Kyoung Jin Choi ◽

Jae Kyoung Moon ◽

Min Park ◽

Haechon Kim ◽

Jong-Lam Lee

Keyword(s):

Leakage Current ◽

Field Effect ◽

Gate Leakage Current ◽

Theoretical study of the source-drain current and gate leakage current to understand the graphene field-effect transistors

Physical Chemistry Chemical Physics ◽

10.1039/c0cp01026j ◽

2011 ◽

Vol 13 (8) ◽

pp. 3461 ◽

Cited By ~ 8

Author(s):

Cui Yu ◽

Hongmei Liu ◽

Wenbin Ni ◽

Nengyue Gao ◽

Jianwei Zhao ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Theoretical Study ◽

Drain Current ◽

Gate Leakage Current ◽

Enhanced CAD model for gate leakage current in heterostructure field effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.502114 ◽

1996 ◽

Vol 43 (6) ◽

pp. 845-851 ◽

Cited By ~ 7

Author(s):

Kie Young Lee ◽

B. Lund ◽

T. Ytterdal ◽

P. Robertson ◽

E.J. Martinez ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Heterostructure Field Effect Transistors

Cad Model ◽

Gate Leakage Current ◽

Gate Leakage ◽

Al2O3/Si3N4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers: Low Gate Leakage Current with High Transconductance Operation

10.7567/ssdm.2004.g-4-3 ◽

2004 ◽

Author(s):

Narihiko Maeda ◽

Takashi Makimura ◽

Chengxin Wang ◽

Masanobu Hiroki ◽

Toshiki Makimoto ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Gate Leakage Current ◽

Gate Leakage ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure ◽

High Transconductance

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2012.02.003 ◽

2012 ◽

Vol 52 (7) ◽

pp. 1323-1327 ◽

Cited By ~ 4

Author(s):

J. Kováč ◽

A. Šatka ◽

A. Chvála ◽

D. Donoval ◽

P. Kordoš ◽

...

Keyword(s):

Leakage Current ◽

Field Effect ◽

Heterostructure Field Effect Transistors

Gate Leakage Current ◽

Gate Leakage ◽

Shot noise in GaAs metal semiconductor field effect transistors with high gate leakage current

Solid-State Electronics ◽

10.1016/0038-1101(94)90224-0 ◽

1994 ◽

Vol 37 (10) ◽

pp. 1763-1764 ◽

Cited By ~ 10

Author(s):

W.A. Strifler ◽

B.T. Pugh ◽

R.D. Remba

Keyword(s):

Leakage Current ◽

Shot Noise ◽

Field Effect ◽

Gate Leakage Current ◽

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors

Journal of Applied Physics ◽

10.1063/1.4900581 ◽

2014 ◽

Vol 116 (16) ◽

pp. 164508 ◽

Cited By ~ 2

Author(s):

Arunesh Goswami ◽

Robert J. Trew ◽

Griff L. Bilbro

Keyword(s):

Leakage Current ◽

Field Effect ◽

Heterojunction Field Effect Transistors

Gate Leakage Current ◽

Gate Leakage ◽