Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption

Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry (SIMS). For Ge samples with oxygen content less than 5⋅1017 cm-3 a good correlation has been found between the values of oxygen concentration and values of absorption coefficient in maximum of the absorption band at 855.6 cm-1 with a proportionality coefficient CO = 0.95.1017 сm-2. It is argued that kinetics of oxygen-related thermal double donor formation and oxygen loss upon heat-treatments of Ge crystals at 350 оС cannot be described properly with the application of calibration coefficient CO = 5.1016 cm-2, which is widely used for the determination of oxygen concentration in Ge crystals.

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Determination of Interstitial Oxygen Concentration in Low‐Resistivity n‐type Silicon Wafers by Infrared Absorption Measurements

Journal of The Electrochemical Society ◽

10.1149/1.2086329 ◽

1990 ◽

Vol 137 (12) ◽

pp. 3926-3928 ◽

Cited By ~ 3

Author(s):

Dale E. Hill

Keyword(s):

Oxygen Concentration ◽

Infrared Absorption ◽

Silicon Wafers ◽

Interstitial Oxygen ◽

Low Resistivity ◽

Type Silicon ◽

Absorption Measurements

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Determination of Interstitial Oxygen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l1097 ◽

1995 ◽

Vol 34 (Part 2, No. 9A) ◽

pp. L1097-L1099 ◽

Cited By ~ 3

Author(s):

Hiroyuki Saito ◽

Hiroshi Shirai

Keyword(s):

Infrared Spectroscopy ◽

High Resolution ◽

Low Temperature ◽

Oxygen Concentration ◽

Silicon Wafers ◽

Interstitial Oxygen

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Determination of oxygen concentration in silicon and germanium by infrared absorption

10.6028/nbs.tn.529 ◽

1970 ◽

Author(s):

W Robert Thurber

Keyword(s):

Oxygen Concentration ◽

Infrared Absorption ◽

Silicon And Germanium

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Residual Oxygen Determination In Silicon Epilayer, Comparison With Ftir Measurements

MRS Proceedings ◽

10.1557/proc-483-185 ◽

1997 ◽

Vol 483 ◽

Author(s):

F. Degas ◽

G. Blondiaux ◽

B. Pichaud

Keyword(s):

Oxygen Concentration ◽

Thermal Treatments ◽

Interstitial Oxygen ◽

Low Oxygen ◽

Power Devices ◽

Oxygen Determination ◽

Charged Particle Activation Analysis ◽

Particle Activation ◽

Low Oxygen Concentration

AbstractFor power devices the use of silicon epilayer on CZ substrate is a solution to make devices with a low oxygen concentration in the active zone. Oxygen is probably one of the most important residual impurities in silicon samples. Usualy the determination of the interstitial oxygen is done by Fourier Transform Infra Red spectroscopy (FTIR). In this work we have determined oxygen by Charged Particle Activation Analysis (CPAA). The main difference between these two techniques is that CPAA gives the total oxygen concentration whereas FTIR gives interstitial oxygen.We have determined the oxygen in 200μm thick silicon epilayer and studied its behavior during thermal treatments. Oxygen concentration is found in the range of 1015/cm3 just after the epitaxial process. After thermal treatment the concentration in the epilayer rose to several 1016/cm3 to 1017/cm3, depending on the treatment. A comparison with FTIR experiment is done and the amount of oxygen precipitate is determined.

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