A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique

Fabrication Process ◽

Tantalum Silicide

Gallium arsenide traveling-wave field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.21910 ◽

1985 ◽

Vol 32 (1) ◽

pp. 61-66 ◽

Cited By ~ 37

Author(s):

A.J. Holden ◽

D.R. Daniel ◽

I. Davies ◽

C.H. Oxley ◽

H.D. Rees

Keyword(s):

Gallium Arsenide ◽

Wave Field ◽

Traveling Wave ◽

Field Effect ◽

Suppression of Hysteresis in Carbon Nanotube Field-Effect Transistors: Effect of Contamination Induced by Device Fabrication Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.5501 ◽

2006 ◽

Vol 45 (6B) ◽

pp. 5501-5503 ◽

Cited By ~ 46

Author(s):

Hideki Shimauchi ◽

Yutaka Ohno ◽

Shigeru Kishimoto ◽

Takashi Mizutani

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Device Fabrication ◽

Fabrication Process

Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

Solid-State Electronics ◽

10.1016/0038-1101(69)90119-1 ◽

1969 ◽

Vol 12 (2) ◽

pp. 111-116 ◽

Cited By ~ 10

Author(s):

H. Statz ◽

W.v. Münch

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Field Effect ◽

Spontaneous oscillations in gallium arsenide field effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(80)90153-7 ◽

1980 ◽

Vol 23 (2) ◽

pp. 157-172 ◽

Cited By ~ 14

Author(s):

H.L. Grubin ◽

D.K. Ferry ◽

K.R. Gleason

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Spontaneous Oscillations

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

10.1109/cornel.1991.170018 ◽

2002 ◽

Author(s):

C.A. Bozada ◽

R.W. Dettmer ◽

C.L. Eppers ◽

K. Nakano ◽

C.E. Stutz ◽

...

Keyword(s):

Gallium Arsenide ◽

Low Temperature ◽

Field Effect ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Temperature Gaas

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors

10.1109/vtsa.2008.4530782 ◽

2008 ◽

Author(s):

Hock-Chun Chin ◽

Ming Zhu ◽

Sung-Jin Whang ◽

Chih-Hang Tung ◽

Ganesh S. Samudra ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Field Effect ◽

Surface Passivation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate

Evaluation of Effective Gate Length of Gallium Arsenide Metal-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.5464 ◽

1997 ◽

Vol 36 (Part 1, No. 9A) ◽

pp. 5464-5467

Author(s):

Tamotsu Kimura ◽

Tomoyuki Ohshima

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Gate Length

Reliability of microwave gallium arsenide field effect transistors

Microelectronics Reliability ◽

10.1016/0026-2714(75)90051-7 ◽

1975 ◽

Vol 14 (5-6) ◽

pp. 404

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1977.0013 ◽

1977 ◽

Vol 1 (4) ◽

pp. 105 ◽

Cited By ~ 32

Author(s):

Robert A. Warriner

Keyword(s):

Computer Simulation ◽

Gallium Arsenide ◽

Monte Carlo ◽

Monte Carlo Methods ◽

Field Effect ◽

Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator

IEEE Transactions on Electron Devices ◽

10.1109/16.987102 ◽

2002 ◽

Vol 49 (3) ◽

pp. 343-353 ◽

Cited By ~ 20

Author(s):

K. Remashan ◽

K.N. Bhat

Keyword(s):

Gallium Arsenide ◽

Silicon Nitride ◽

Field Effect ◽

Gate Insulator ◽

Mis Capacitors