Reliability of microwave gallium arsenide field effect transistors

Microelectronics Reliability ◽

10.1016/0026-2714(75)90051-7 ◽

1975 ◽

Vol 14 (5-6) ◽

pp. 404

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistors

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Gallium arsenide traveling-wave field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.21910 ◽

1985 ◽

Vol 32 (1) ◽

pp. 61-66 ◽

Author(s):

A.J. Holden ◽

D.R. Daniel ◽

I. Davies ◽

C.H. Oxley ◽

H.D. Rees

Keyword(s):

Gallium Arsenide ◽

Traveling Wave ◽

Field Effect ◽

Field Effect Transistors

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Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate

Solid-State Electronics ◽

10.1016/0038-1101(69)90119-1 ◽

1969 ◽

Vol 12 (2) ◽

pp. 111-116 ◽

Author(s):

H. Statz ◽

W.v. Münch

Keyword(s):

Gallium Arsenide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors

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Spontaneous oscillations in gallium arsenide field effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(80)90153-7 ◽

1980 ◽

Vol 23 (2) ◽

pp. 157-172 ◽

Author(s):

H.L. Grubin ◽

D.K. Ferry ◽

K.R. Gleason

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistors ◽

Spontaneous Oscillations

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Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits ◽

10.1109/cornel.1991.170018 ◽

2002 ◽

Author(s):

C.A. Bozada ◽

R.W. Dettmer ◽

C.L. Eppers ◽

K. Nakano ◽

C.E. Stutz ◽

...

Keyword(s):

Gallium Arsenide ◽

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Temperature Gaas

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A Fabrication Process of Self-Aligned Tantalum-Silicide Gate Gallium-Arsenide Metal-Semiconductor Field Effect Transistors with Tantalum-Silicide Cap-Annealing Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.2578 ◽

1996 ◽

Vol 35 (Part 1, No. 5A) ◽

pp. 2578-2582 ◽

Author(s):

Wan-Thai Hsu ◽

Chuan-Cheng Tu ◽

Wei-Su Chen ◽

Fon-Shan Huang

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistors ◽

Fabrication Process ◽

Tantalum Silicide

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In-Situ Surface Passivation and Metal-Gate/High-κDielectric Stack Formation for N-channel Gallium Arsenide Metal-Oxide-Semiconductor Field-Effect Transistors

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vtsa.2008.4530782 ◽

2008 ◽

Author(s):

Hock-Chun Chin ◽

Ming Zhu ◽

Sung-Jin Whang ◽

Chih-Hang Tung ◽

Ganesh S. Samudra ◽

...

Keyword(s):

Gallium Arsenide ◽

Metal Oxide ◽

Field Effect ◽

Surface Passivation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Evaluation of Effective Gate Length of Gallium Arsenide Metal-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.5464 ◽

1997 ◽

Vol 36 (Part 1, No. 9A) ◽

pp. 5464-5467

Author(s):

Tamotsu Kimura ◽

Tomoyuki Ohshima

Keyword(s):

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistors ◽

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Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods

IEE Journal on SolidState and Electron Devices ◽

10.1049/ij-ssed.1977.0013 ◽

1977 ◽

Vol 1 (4) ◽

pp. 105 ◽

Author(s):

Robert A. Warriner

Keyword(s):

Computer Simulation ◽

Gallium Arsenide ◽

Monte Carlo ◽

Monte Carlo Methods ◽

Field Effect ◽

Field Effect Transistors

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Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator

IEEE Transactions on Electron Devices ◽

10.1109/16.987102 ◽

2002 ◽

Vol 49 (3) ◽

pp. 343-353 ◽

Author(s):

K. Remashan ◽

K.N. Bhat

Keyword(s):

Gallium Arsenide ◽

Silicon Nitride ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

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Gallium arsenide buffer amplifier

10.36227/techrxiv.17194979 ◽

2021 ◽

Author(s):

Vladislav Chumakov ◽

Pakhomov Ilya ◽

Klejmenkin D.V. ◽

Kunts Alexey

Keyword(s):

Computer Simulation ◽

Gallium Arsenide ◽

Field Effect ◽

Field Effect Transistors ◽

Buffer Amplifier ◽

Amplitude Characteristics

The circuitry of a buffer amplifier (BA) implemented on gallium arsenide n-channel field-effect transistors with a control p-n junction and gallium arsenide bipolar p-n-p transistors is considered. The results of computer simulation of the amplitude characteristics of the BA in the LTspice environment are presented. The proposed circuit solutions are recommended for use in RC filters of the Sallen Key family

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