Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

2002 ◽  
Vol 31 (12) ◽  
pp. 1341-1346 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Wen-Tse Hsieh ◽  
Yong-Shiuan Tsair ◽  
Cheng-Nan Chang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Sources ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Thermal Chemical Vapor Deposition

β-SiC Photodiodes Prepared on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition

1997 ◽  
Vol 36 (Part 1, No. 8) ◽  
pp. 5151-5155 ◽  
Author(s):  
Kuen-Hsien Wu ◽  
Yean-Kuen Fang ◽  
Jing-Hong Zhou ◽  
Jyh-Jier Ho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Thermal Chemical Vapor Deposition

Silicon carbide layers produced by rapid thermal chemical vapor deposition

1991 ◽  
Author(s):  
F. H. Ruddell ◽  
D. McNeill ◽  
Brian M. Armstrong ◽  
Harold S. Gamble
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 289-294 ◽  
Author(s):  
Philip Hens ◽  
Ryan Brow ◽  
Hannah Robinson ◽  
Bart Van Zeghbroeck
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Thick Layer ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Charge Carrier Density ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Hot Filament

ABSTRACTFor the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic Structures

2002 ◽  
Vol 742 ◽  
Author(s):  
Spyros Gallis ◽  
Ulrike Futschik ◽  
James Castracane ◽  
Alain E. Kaloyeros ◽  
Harry Efstathiadis ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Protective Coatings ◽  
Microstructural Analysis ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Systems ◽  
Sic Films

ABSTRACTAmorphous silicon carbide (SiC) films were deposited on silicon substrates by thermal chemical vapor deposition (TCVD) technique, at substrate temperatures ranging from 620 °C - 850 °C. A novel, single-source halide free precursor, SP-4000, belonging to the family of polysilenemethylenes (PSM) (nominal structure [-SiH2-CH2-]n, n = 2–8 including branched and cyclic isomers) was used as source. Argon was used, as both the precursor carrier gas and the dilution gas. Other reactants, such as hydrogen or hydrocarbons, were not used. The deposition yielded films with Si/C ratio of 1±0.2. The highest achieved growth rate was 83 nm/min.The modulus of elasticity and the nanohardness of the SiC films were measured with the aid of a nanoindenter at various depths, which did not exceed 25% of the film thickness. The average nanohardness at indentation depths of approximately 10% of the film thickness was measured up to 13 ± 4 GPa. The results of the nanoindentation will be discussed in conjunction with the microstructural analysis of the films.In addition, the development of a viable TCVD SiC process presents significant opportunities in the nano/micro systems field. In particular, the ability to custom tailor the surfaces of microfluidic structures allows for the development of valves, pumps and channels for use in corrosive or high temperature environments. Initial results from the deposition of SiC films on prototype microfluidic components will be presented.

Silicon Carbide Structures Prepared by Rapid Thermal Chemical Vapor Deposition

1989 ◽  
Vol 146 ◽  
Author(s):  
J.L. Crowley ◽  
J.C. Liao ◽  
P.H. Kleins ◽  
G.J. Campisi
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Optical Phonon ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Longitudinal Optical Phonon ◽  
Crystal Silicon ◽  
Thermal Chemical Vapor Deposition

ABSTRACTThe deposition of beta Silicon Carbide unto single crystal silicon (100) wafers using rapid thermal chemical vapor deposition (RTCVD) has been carried out using silane and ethylene as the source gases. Deposition temperatures were varid from 1100°C to 1300°C. Auger analysis revealed the silicon carbide films to be stoichiometric at all temperatures. Infrared spectroscopy data taken between 1200 cm−1 and 60° Cm−1 show the appearance of the longitudinal optical phonon at 974 cm−1 and the transverse optical phonon at 794 cm−1 in samples deposited at 1200°C and above. Stress in the films deposited on the single crystal silicon substrates is seen to go from zero or slightly compressive at 11O0°C to strongly tensile at 1300°C.

Sign in / Sign up

Export Citation Format

Share Document