Characterization of Dopant Interdiffusion and Power Reduction on TiSi2Local Wiring Technology in Sub-Half-Micron Complementary Metal Oxide Semiconductor

1998 ◽  
Vol 37 (Part 1, No. 4A) ◽  
pp. 1674-1679 ◽  
Author(s):  
Jiro Ida ◽  
Atsushi Ohtomo
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Power Reduction ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Characterization of High-Performance Polycrystalline Silicon Complementary Metal–Oxide–Semiconductor Circuits

2007 ◽  
Vol 46 (1) ◽  
pp. 51-55 ◽  
Author(s):  
Genshiro Kawachi ◽  
Yoshiaki Nakazaki ◽  
Hiroyuki Ogawa ◽  
Masayuki Jyumonji ◽  
Noritaka Akita ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits

scholarly journals Characterization of near-terahertz complementary metal-oxide semiconductor circuits using a Fourier-transform interferometer

2011 ◽  
Vol 82 (10) ◽  
pp. 103106 ◽  
Author(s):  
D. J. Arenas ◽  
Dongha Shim ◽  
D. I. Koukis ◽  
Eunyoung Seok ◽  
D. B. Tanner ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Circuits
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