Gas Sensing Properties of Indium Oxide Thin Film on Silicon Substrate Prepared by Spin-Coating Method

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 4994-4998 ◽  
Author(s):  
Wan-Young Chung ◽  
Go Sakai ◽  
Kengo Shimanoe ◽  
Norio Miura ◽  
Duk-Dong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Silicon Substrate ◽  
Spin Coating ◽  
Gas Sensing ◽  
Oxide Thin Film ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Coating Method ◽  
Indium Oxide Thin Film

Preparation of indium oxide thin film by spin-coating method and its gas-sensing properties

1998 ◽  
Vol 46 (2) ◽  
pp. 139-145 ◽  
Author(s):  
Wan-Young Chung ◽  
Go Sakai ◽  
Kengo Shimanoe ◽  
Norio Miura ◽  
Duk-Dong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Spin Coating ◽  
Gas Sensing ◽  
Oxide Thin Film ◽  
Sensing Properties ◽  
Spin Coating Method ◽  
Gas Sensing Properties ◽  
Coating Method ◽  
Indium Oxide Thin Film

Spin-coated indium oxide thin film on alumina and silicon substrates and their gas sensing properties

2000 ◽  
Vol 65 (1-3) ◽  
pp. 312-315 ◽  
Author(s):  
Wan-Young Chung ◽  
Go Sakai ◽  
Kengo Shimanoe ◽  
Norio Miura ◽  
Duk-Dong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Gas Sensing ◽  
Oxide Thin Film ◽  
Silicon Substrates ◽  
Sensing Properties ◽  
Gas Sensing Properties ◽  
Indium Oxide Thin Film

scholarly journals Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 111
Author(s):  
Rihui Yao ◽  
Xiao Fu ◽  
Wanwan Li ◽  
Shangxiong Zhou ◽  
Honglong Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Spin Coating ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Oxide Thin Film ◽  
Process Conditions ◽  
Hydroxyl Groups ◽  
Band Theory ◽  
Indium Oxide Thin Film

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

Evaluation of depletion layer width and gas-sensing properties of antimony-doped tin oxide thin film sensors

2015 ◽  
Vol 220 ◽  
pp. 1354-1360 ◽  
Author(s):  
Jianqiao Liu ◽  
Xuesong Liu ◽  
Zhaoxia Zhai ◽  
Guohua Jin ◽  
Qiuxuan Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Gas Sensing ◽  
Depletion Layer ◽  
Oxide Thin Film ◽  
Layer Width ◽  
Sensing Properties ◽  
Depletion Layer Width ◽  
Thin Film Sensors ◽  
Gas Sensing Properties
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