Efficient Hole Generation above 1019 cm-3 in Mg-Doped InGaN/GaN Superlattices at Room Temperature

2000 ◽  
Vol 39 (Part 2, No. 3A/B) ◽  
pp. L195-L196 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Room Temperature ◽  
Hole Generation ◽  
Mg Doped

High Room-Temperature Hole Concentrations above 1019 cm−3 in Mg-Doped InGaN/GaN Superlattices

2000 ◽  
Vol 622 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Temperature Dependence ◽  
Valence Band ◽  
Vapor Phase ◽  
Room Temperature ◽  
Structural Parameters ◽  
Hole Concentration ◽  
Band Bending ◽  
Piezoelectric Field ◽  
Hole Generation ◽  
Mg Doped

ABSTRACTWe achieved high hole concentrations above 1019 cm−3 at room temperature in Mg-doped InxGa1-xN/GaN (4 nm/4 nm) superlattices grown by metalorganic vapor phase epitaxy. The hole concentrations for the InxGa1-xN/GaN superlattices increased with the In mole fraction, and the maximum hole concentration reached 2.8 Å 1019 cm−3 for the In0.22Ga0.78N/GaN superlattice. The hole concentrations for the superlattices strongly depend on the structural parameters of the superlattices. The band bending due to the strain-induced piezoelectric field and the valence band structures of the InGaN/GaN heterostructures affect the hole generation in the superlattices. The weak temperature dependence of the resistivities for the InGaN/GaN superlattices with higher In mole fractions indicates highly efficient hole generation in the superlattice.

scholarly journals Structure and Properties of Ln2MoO6 Oxymolybdates (Ln = La, Pr, Nd) Doped with Magnesium

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 611
Author(s):  
Ekaterina Orlova ◽  
Elena Kharitonova ◽  
Timofei Sorokin ◽  
Alexander Antipin ◽  
Nataliya Novikova ◽  
...  
Keyword(s):  
Rare Earth ◽  
Infrared Spectroscopy ◽  
Room Temperature ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Spectroscopy Data ◽  
Structure And Properties ◽  
Hygroscopic Properties ◽  
Thermogravimetric Studies ◽  
Mg Doped

The literature data and the results obtained by the authors on the study of the structure and properties of a series of polycrystalline and single-crystal samples of pure and Mg-doped oxymolybdates Ln2MoO6 (Ln = La, Pr, Nd) are analyzed. Presumably, the high-temperature phase I41/acd of Nd2MoO6 single crystals is retained at room temperature. The reason for the loss of the center of symmetry in the structures of La2MoO6 and Pr2MoO6 and the transition to the space group I4¯c2 is the displacement of oxygen atoms along the twofold diagonal axes. In all structures, Mg cations are localized near the positions of the Mo atoms, and the splitting of the positions of the atoms of rare-earth elements is found. Thermogravimetric studies, as well as infrared spectroscopy data for hydrated samples of Ln2MoO6 (Ln = La, Pr, Nd), pure and with an impurity of Mg, confirm their hygroscopic properties.

scholarly journals Sintesis dan Analisis Penambahan Doping Magnesium (Mg) pada Material Superkonduktor FeSe dengan Metode Reaksi Padatan dalam Tabung Tertutup

2019 ◽  
Vol 19 (2) ◽  
pp. 89-94
Author(s):  
Muhammad Ilham Maulana
Keyword(s):  
Room Temperature ◽  
Industrial Revolution ◽  
Stoichiometric Composition ◽  
Solid State Reaction Method ◽  
Superconducting Materials ◽  
Superconducting Material ◽  
Critical Temperature Tc ◽  
Properties Of Superconductors ◽  
Very High ◽  
Mg Doped

[ID] Ketergantungan manusia terhadap teknologi memasuki Revolusi Industri 4.0 sangat tinggi. Contoh penerapan inovasi di bidang teknologi informasi salah satunya adalah superkomputer dari material superkonduktor. Material superkonduktor identik dengan material non ferromagnetik karena sifatnya diamagnetis sempurna. Namun, sejak ditemukannya material superkonduktor berbasis logam ferromagnetik, penelitian terus dikembangkan, salah satunya material FeSe. Beberapa parameter yang perlu diperhatikan pada pembuatan material FeSe untuk memperoleh sifat superkonduktor terbaiknya diantaranya komposisi stoikiometri, penambahan doping, dan proses pembuatan material FeSe seperti proses pemaduan dan sintering. Dalam penelitian ini, pengaruh variasi doping Mg akan dianalisis terhadap sifat superkonduktor, morfologi, dan fasa yang terbentuk pada material superkonduktor FeSe. Material FeSe dibuat dengan metode reaksi padatan dalam tabung tertutup (Powder in Sealed Tube) secara insitu. Temperatur sintering yang digunakan 845⁰C yang ditahan selama 6 jam, dengan kenaikan temperatur 7⁰C/menit dari temperatur kamar, dan laju pendinginan normalizing. Kandidat material superkonduktor terbaik terdapat pada sampel Mg0.01Fe0.99Se. Didapatkan Temperatur kritis (Tc)onset = 15.42 K dan Tczero = 5.4 K. Morfologi sampel menunjukkan kristalisasi besar. Lalu, persentase fraksi volume fasa superkonduktornya juga merupakan yang terbesar yaitu 81.99%. [EN] Human dependence on technology into the Industrial Revolution 4.0 is very high. Example, the application of innovations in information technology is supercomputer from superconducting materials. Superconducting materials are identical from non-ferromagnetic materials because tend perfectly diamagnetic. However, since ferromagnetic-metal-based superconducting material discovered, research continues to be developed, like FeSe material. Some parameters that need to be considered in making FeSe material to obtain the best superconductor properties include stoichiometric composition, doping addition, and process of making FeSe materials like synthesis and sintering treatment. In this study, the effect of Mg-doped variations will be analyzed towards properties of superconductors, morphology, and phases formed in FeSe superconducting materials. MgxFe1-xSe made by solid-state reaction method in sealed tube (Powder in Sealed Tube) “insituely”. The sintering temperature used 845⁰C which held for 6 hours, with 7⁰C/minute temperature rise from room-temperature and normalizing cooling rate used. The best candidate superconducting material came from Mg0.01Fe0.99Se, obtained critical temperature (Tc)onset = 15.42 K, and Tczero = 5.4 K. Sample morphology shows a large crystallization. Then, the percentage fraction of the superconducting phase was also the largest, which is 81.99%.

Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2428-2430 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Piezoelectric Field ◽  
Hole Generation ◽  
Mg Doped

The Dependence of the Magnetic Properties of GaMnN on Codoping by Mg and Si

2004 ◽  
Vol 834 ◽  
Author(s):  
Mason J. Reed ◽  
M. Oliver Luen ◽  
Meredith L. Reed ◽  
Salah M. Bedair ◽  
Fevzi Erdem Arkun ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Fermi Level ◽  
Energy Band ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Room Temperature Ferromagnetism ◽  
Chemical Vapor ◽  
Material System ◽  
Si Doped ◽  
Mg Doped

ABSTRACTThe magnetic properties of GaMnN, grown by metalorganic chemical vapor deposition, depend on the addition of dopants; where undoped materials are ferromagnetic, and n -type (Si-doped) and p -type (Mg-doped) films are either ferromagnetic or paramagnetic depending on dopant concentration. The ferromagnetism of this material system seems correlated to Fermi level position, and is observed only when the Fermi level is within or close to the Mn energy band. This allows ferromagnetism-mediating carriers to be present in the Mn energy band. The current results exclude precipitates or clusters as the origin of room temperature ferromagnetism in GaMnN.

Room Temperature Ferromagnetism and Band Gap Engineering in Mg Doped ZnO RF/DC Sputtered Films

2013 ◽  
Vol 1577 ◽  
Author(s):  
Sreekanth K. Mahadeva ◽  
Zhi-Yong Quan ◽  
Jin-Cheng Fan ◽  
Hasan B. Albargi ◽  
Gillian A Gehring ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Ambient Conditions ◽  
Zno Film ◽  
Band Gap Engineering ◽  
Sputtered Films ◽  
Doped Zno ◽  
Mg Doped ◽  
Comprehensive Study

ABSTRACTMg doped ZnO thin films were prepared by DC/RF magnetron co-sputtering in (Ar+O2) ambient conditions using metallic Mg and Zn targets. We present a comprehensive study of the effects of film thickness on the structural, optical and magnetic properties. Room temperature ferromagnetism was observed in the films and the saturation magnetization (MS) increases at first as the film’s thickness increases and then decreases. The MS value as high as ∼15.76 emu/cm3 was achieved for the Mg-doped ZnO film of thickness 120 nm. The optical band gap of the films determined to be in the range 3.42 to 3.52 eV.

scholarly journals Analisis Penambahan Doping Magnesium (Mg) pada Material Superkonduktor FeSe dengan Metode Reaksi Padatan dalam Tabung Tertutup

2019 ◽  
Vol 19 (02) ◽  
pp. 89
Author(s):  
Muhammad Ilham Maulana
Keyword(s):  
Room Temperature ◽  
Industrial Revolution ◽  
Stoichiometric Composition ◽  
Solid State Reaction Method ◽  
Superconducting Materials ◽  
Superconducting Material ◽  
Critical Temperature Tc ◽  
Properties Of Superconductors ◽  
Very High ◽  
Mg Doped

[ID] Ketergantungan manusia terhadap teknologi memasuki Revolusi Industri 4.0 sangat tinggi. Contoh penerapan inovasi di bidang teknologi informasi salah satunya adalah superkomputer dari material superkonduktor. Material superkonduktor identik dengan material non ferromagnetik karena sifatnya diamagnetis sempurna. Namun, sejak ditemukannya material superkonduktor berbasis logam ferromagnetik, penelitian terus dikembangkan, salah satunya material FeSe. Beberapa parameter yang perlu diperhatikan pada pembuatan material FeSe untuk memperoleh sifat superkonduktor terbaiknya diantaranya komposisi stoikiometri, penambahan doping, dan proses pembuatan material FeSe seperti proses pemaduan dan sintering. Dalam penelitian ini, pengaruh variasi doping Mg akan dianalisis terhadap sifat superkonduktor, morfologi, dan fasa yang terbentuk pada material superkonduktor FeSe. Material FeSe dibuat dengan metode reaksi padatan dalam tabung tertutup (Powder in Sealed Tube) secara insitu. Temperatur sintering yang digunakan 845⁰C yang ditahan selama 6 jam, dengan kenaikan temperatur 7⁰C/menit dari temperatur kamar, dan laju pendinginan normalizing. Kandidat material superkonduktor terbaik terdapat pada sampel Mg0.01Fe0.99Se. Didapatkan Temperatur kritis (Tc)onset = 15.42 K dan Tczero = 5.4 K. Morfologi sampel menunjukkan kristalisasi besar. Lalu, persentase fraksi volume fasa superkonduktornya juga merupakan yang terbesar yaitu 81.99%. [EN] Human dependence on technology into the Industrial Revolution 4.0 is very high. Example, the application of innovations in information technology is supercomputer from superconducting materials. Superconducting materials are identical from non-ferromagnetic materials because tend perfectly diamagnetic. However, since ferromagnetic-metal-based superconducting material discovered, research continues to be developed, like FeSe material. Some parameters that need to be considered in making FeSe material to obtain the best superconductor properties include stoichiometric composition, doping addition, and process of making FeSe materials like synthesis and sintering treatment. In this study, the effect of Mg-doped variations will be analyzed towards properties of superconductors, morphology, and phases formed in FeSe superconducting materials. MgxFe1-xSe made by solid-state reaction method in sealed tube (Powder in Sealed Tube) “insituely”. The sintering temperature used 845⁰C which held for 6 hours, with 7⁰C/minute temperature rise from room-temperature and normalizing cooling rate used. The best candidate superconducting material came from Mg0.01Fe0.99Se, obtained critical temperature (Tc)onset = 15.42 K, and Tczero = 5.4 K. Sample morphology shows a large crystallization. Then, the percentage fraction of the superconducting phase was also the largest, which is 81.99%.

Room temperature ferromagnetism in Mg-doped ZnO nanoparticles

2015 ◽  
Author(s):  
Jaspal Singh ◽  
Pritampal Singh Gill ◽  
A. Vashihth ◽  
N. K. Verma
Keyword(s):  
Zno Nanoparticles ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Doped Zno ◽  
Mg Doped

Hydrogenation of Gallium Nitride

1993 ◽  
Vol 325 ◽  
Author(s):  
M. S. Brandt ◽  
N. M. Johnson ◽  
R. J. Molnar ◽  
R. Singh ◽  
T. D. Moustakas
Keyword(s):  
Comparative Study ◽  
Conduction Band ◽  
Room Temperature ◽  
Hole Concentration ◽  
Conduction Band Edge ◽  
Order Of Magnitude ◽  
Si Doped ◽  
Donor State ◽  
P Type ◽  
Mg Doped

AbstractA comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation of deep defects and of Mg-acceptors due to formation of hydrogen-related complexes and the introduction of a hydrogenrelated donor state 100 meV below the conduction band edge.

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