Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25 µm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2635-2638 ◽  
Author(s):  
Y. J. Song ◽  
N. W. Jang ◽  
D. J. Jung ◽  
H. H. Kim ◽  
H. J. Joo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Ferroelectric Capacitors

Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 694-697 ◽  
Author(s):  
Young Min Kang ◽  
Choong Heui Chung ◽  
Sang Hyun Oh ◽  
Beelyong Yang ◽  
Seaung Suk Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Polarization Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Ferroelectric Capacitors

Current Status of Ferroelectric Random-Access Memory

MRS Bulletin ◽  
2004 ◽  
Vol 29 (11) ◽  
pp. 823-828 ◽  
Author(s):  
Yoshihiro Arimoto ◽  
Hiroshi Ishiwara
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Current Status ◽  
Access Time ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
The Status ◽  
Recent Developments ◽  
Static Ram ◽  
Ferroelectric Capacitors

AbstractThe current status of ferroelectric random-access memory (FeRAM) technology is reviewed in this article. Presented first is the status of conventional FeRAM, in which the memory cells are composed of ferroelectric capacitors to store the data and cell-selection transistors to access the selected capacitors. Discussed next are recent developments in the field. Pb(Zrx, Ti1–x)O3 (PZT) and SrBi2Ta2O9 (SBT) films are being used to produce 0.13 mμ and 0.18 μm FeRAM cells, respectively, with a stacked capacitor configuration; these cells are easily embedded into logic circuits. A new class of FeRAM called 6T4C—containing static RAM (SRAM) cells composed of six transistors (6T) and four ferroelectric capacitors (4C)—has been commercially produced. This type of FeRAM features a nondestructive readout operation, unlimited read/write cycling, and a fast access time of less than 10 ns. Lastly, the status of field-effect-transistor (FET)-type FeRAM is reviewed, emphasizing that the data retention time of a ferroelectric-gate FET has been improved to more than a month in recent studies.

scholarly journals Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018 ◽  
Vol 65 (8) ◽  
pp. 1708-1714 ◽  
Author(s):  
A. L. Bosser ◽  
V. Gupta ◽  
A. Javanainen ◽  
G. Tsiligiannis ◽  
S. D. LaLumondiere ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Effects ◽  
Ferroelectric Random Access Memory

scholarly journals Characterization of Ferroelectric Random Access Memory (FRAM) Storage Capacitors

2020 ◽  
Vol 26 (S2) ◽  
pp. 1404-1405
Author(s):  
Sahar Hihath ◽  
Hannah Harter ◽  
Jerry Fortier ◽  
David Flowers
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Ferroelectric Random Access Memory
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