Fabrication of KNbO3Epitaxial Thin Films on Sapphire Substrates by Pulsed Laser Deposition

Vanadium dioxide (VO2) films were grown on c-and m-plane sapphire substrates by pulsed laser deposition (PLD) technique with VO2ceramic target. The VO2films with preferred growth orientation and uniform dense distribution have been achieved on both substrates, as confirmed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The terahertz (THz) transmission properties of VO2thin films were studied by terahertz time-domain spectroscopy (THz-TDS). The results indicate that the THz transmission properties of VO2films are strongly influenced by the sapphire substrate orientation, suggesting that VO2films are ideal material candidates for THz modulation.

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Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-361-27 ◽

1994 ◽

Vol 361 ◽

Cited By ~ 1

Author(s):

William Jo ◽

T.W. Noh

Keyword(s):

Thin Films ◽

Substrate Temperature ◽

Pulsed Laser Deposition ◽

Film Growth ◽

Narrow Range ◽

Pulsed Laser ◽

Growth Behavior ◽

Laser Deposition ◽

Sapphire Substrates ◽

Deposition Parameters

ABSTRACTUsing pulsed laser deposition, Bi4Ti3O12 thin films were grown on (0001) and (1102) surfaces of Al2O3. Substrate temperature from 700 to 800 °C and oxygen pressure from 50 to 1000 mtorr were varied, and their effects on Bi4Ti3O12 film growth behavior was investigated. Only for a narrow range of deposition parameters, can highly oriented Bi4Ti3O12(104) films be grown on Al2O3(0001). Further, epitaxial BTO(004) films can be grown on Al2O3(1102). The growth behavior of preferential BTO film orientations can be explained in terms of atomic arrangements in the Bi4Ti3O12 and the Al2O3 planes.

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Influence of Oxygen Pressure on Growth of Si-Doped β-(AlxGa1 − x)2O3 Thin Films on c-Sapphire Substrates by Pulsed Laser Deposition

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0411907jss ◽

2019 ◽

Vol 8 (7) ◽

pp. Q3217-Q3220 ◽

Cited By ~ 6

Author(s):

A. Hassa ◽

H. von Wenckstern ◽

L. Vines ◽

M. Grundmann

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Oxygen Pressure ◽

Pulsed Laser ◽

Laser Deposition ◽

Sapphire Substrates ◽

Si Doped

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Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-764-c7.9 ◽

2003 ◽

Vol 764 ◽

Author(s):

Sang Yeol Lee ◽

Yuan Li ◽

Jang-Sik Lee ◽

J. K. Lee ◽

M. Nastasi ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Band Gap ◽

Energy Band ◽

Pulsed Laser ◽

Processing Parameters ◽

Laser Deposition ◽

Energy Band Gap ◽

Sapphire Substrates ◽

Optical Energy Band Gap

AbstractZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of ZnxCd1-xO as illustrated by Rutherford backscattering spectroscopy.

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Structure-Property Relationships of Tin Dioxide Thin Films Grown on Sapphire Substrates by Femtosecond Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-654-aa7.7.1 ◽

2000 ◽

Vol 654 ◽

Author(s):

J. E. Dominguez ◽

L. Fu ◽

X. Q. Pan

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Pulsed Laser Deposition ◽

Tin Dioxide ◽

Pulsed Laser ◽

Crystal Defects ◽

Laser Deposition ◽

Sapphire Substrates ◽

Reducing Gases ◽

Femtosecond Pulsed Laser

AbstractThe sensitivity of semiconductive tin dioxide (SnO2) to reducing gases is determinedby the electrical conductivity change in the material. This change in conductivity strongly dependson the thickness of the electron depletion layer near the oxide film surface. In this paper we study the effect of crystal defects and interfaces on the electrical properties and the gas sensing performance of SnO2 thin films. SnO2 thin films with the thickness varying from 15 nm to 100 nm were deposited on sapphire substrates with different surface crystallographic orientations by femtosecond pulsed laser deposition. Films grown on the (1012) sapphire (R-cut) are epitaxial, single crystal. High resolution transmission electron microscopy studies showed the existence of a large number of crystal defects including crystallographic shear planes and misfit dislocations at the film/substrate interface. Films grown on the (0001) sapphire substrates (Ccut) are nanocrystalline with (200) texture. The gas sensitivity of the films was measuredin a gas reactor at high temperature. It was found that the sensitivity to reducing gases increases with decreasing film thickness. Electrical transport properties of the SnO2 thin films were investigated byHall effect measurements. Models correlating the microstructures of thin films to electrical properties are proposed.

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