Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length

2004 ◽  
Vol 43 (3) ◽  
pp. 925-930 ◽  
Author(s):  
Kwang-Seng See ◽  
Wai-Shing Lau ◽  
Hong Liao ◽  
Chee-Wee Eng ◽  
Kian-Meng Tee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Diffusion Length ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Drive Current ◽  
Effective Channel

A metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length

1990 ◽  
Vol 68 (5) ◽  
pp. 2493-2495 ◽  
Author(s):  
A. Hartstein ◽  
N. F. Albert ◽  
A. A. Bright ◽  
S. B. Kaplan ◽  
B. Robinson ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
20 Nm

Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

2004 ◽  
Vol 85 (25) ◽  
pp. 6188-6190 ◽  
Author(s):  
L. Shifren ◽  
X. Wang ◽  
P. Matagne ◽  
B. Obradovic ◽  
C. Auth ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Uniaxial Stress ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Drive Current ◽  
P Type
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