Evaluation of Device Configurations through Cross-Sectional Planes along Gates of 0.1 µm Metal–Oxide–Semiconductor Field-Effect Transistors by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
2004 ◽
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pp. 358
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1996 ◽
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pp. 1607
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pp. 221-230
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2000 ◽
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pp. 4904-4909
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2018 ◽
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2020 ◽
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2007 ◽
Vol 46
(4B)
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